• Journal of Korea Foundry Society
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• v.20 no.2
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• pp.116-121
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• 2000

Interfacial reaction and mechanical properties between Sn-Zn-X ternary alloys(X : 3wt.%In, 4wt.%Bi) and Cu-substrate were studied. Cu/solder joints were subjected to aging treatments for up to 50days to see interfacial reaction at $100^{\circ}C$ and then were examined changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. Cu/solder joints were aged to 30days and then loaded to failure at cross head speed of 0.3 mm $min^{-1}$ to measure tensile strength. According to the results of the solderability test, additions of In and Bi in the Sn-9wt.%Zn solder improve the wetting characteristics of the alloy and lower the melting temperature. Through the EDS and XRD analysis of Cu/Sn-9wt.%Zn solder joint, it was concluded that the intermetallic compound was the ${\gamma}-Cu_5Zn_8$ phase. Cu-Zn intermetallics at Cu/solder interfaces played an important role in both the microstructure evolution and failure of solder joints. Cu/solder joint strength was decreased by aging treatment, and those phenomenon was closely related to the thickening of intermetallic layer at Cu/solder joints.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.443-448
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• 2008

Contact materials are used in many electrical devices. Ag-Cd alloy has been widely used in electrical part, because Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy isn't being used because of environmental challenges. Currently new research is being done on ($Ag-SnO_2$ and $Ag-SnO_2-In_2O_3$) as an alternative solution to fix any remainly environmental challenges. However $In_2O_3$ is more expensive and Ag-Sn alloy has low wear resistance. According to our research data Zn has a similar physical and chemical property. In this work, so we changed and optimized the Zn oxide to over 4 and added Sn oxide ratio 0.5, 1.0, 1.5wt%. Conclusions from the data recorded from the experiment of $Ag-ZnO-SnO_2$ are as follows.

• Journal of Electrochemical Science and Technology
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• v.10 no.1
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• pp.61-68
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• 2019

Well aligned $SnO_2$-doped ZnO nanorods were prepared by single step or 2-step electrochemical depositions in a mixture solution of zinc nitrate hexahydrate, ammonium hydroxide solution and 0.1 M tin chloride pentahydrate. The morphologies of electrochemically deposited $SnO_2$-doped ZnO were transformed from plain (or network) structures at low reduction potential to needles on hills at high reduction potential. Well aligned ZnO was prepared at intermediate potential ranges. Reduction reagent and a high concentration of Zn precursor were required to fabricate $SnO_2$ doped ZnO nanorods. When compared to results obtained by single step electrochemical deposition, 2-step electrochemical deposition produced a much higher density of nanorods, which was ascribed to less potential being required for nucleation of nanorods by the second-step electrochemical deposition because the surface was activated in the first-step. Mechanisms of $SnO_2$ doped ZnO nanorods prepared at single step or 2-step was described in terms of applied potential ranges and mass-/charge- limited transfer.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.155.2-155
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• 2000

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of Welding and Joining
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• v.21 no.7
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• pp.59-64
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• 2003

Microstructure and shear strength of Sn-Zn lead-free solders and Au/Ni/Cu UBM joint under thermal aging conditions was investigated. The samples were aged isothermally at 10$0^{\circ}C$ and 15$0^{\circ}C$ for 300, 600, and 900 hours. The IMCs(Intermetallic Compound) at the interface between solder and UBM were examined by FESEM and TEM. The results showed that the shear strength was decreased with aging time and temperature. The solder ball with high activated RA flux had about 8.2% higher shear strength than that of RMA flux. Poor wetting and many voids were observed in the fractured solder joint with of RMA flux. The decreased shear strengths were caused by IMC growth and Zn grain coarsening. Zn reacted with Au and then was transformed to the $\beta$ -AuZn compound. Although AuZn grew first, $r-Ni_5Zn_{21}$ compounds were formed with aging time. The layers indicated by $Ni_5Zn_{21}(1)$, (2), and (3) were formed with the thickness of ∼0.7 ${\mu}{\textrm}{m}$, ∼4 ${\mu}{\textrm}{m}$, and ∼2 ${\mu}{\textrm}{m}$, respectively.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.305-314
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• 1991

This study was conducted to research the formation and the color development of NiO-ZnO-Fe2O3-TiO2-SnO2 system for the purpose of synthesizing the spinel pigments which are stable at high temperature. After preparing ZnO-Fe2O3 as a basic composition, {{{{ chi }}NiO.(l-{{{{ chi }})ZnO.Fe2O3 system, {{{{ chi }}NiO.(l-{{{{ chi }})ZnO.TiO2 system, and {{{{ chi }}NiO.(l-{{{{ chi }})ZnO.SnO2 system were prepared with {{{{ chi }}=0, 0.2, 0.5, 0.7, 1 mole ratio respectively. The manufacturing was carried out at 128$0^{\circ}C$ for 30 minutes. The reflectance measurement and the X-ray analysis of these specimens were carried out and the results were summarized as follows. 1. In the specimens which included NiO, it was difficult for the spinel structure to be formed. 2. As increasing the contents of NiO and Fe2O3, all the groups which were yellow or green colored changed to brown. 3. NiO-ZnO-Fe2O3 system and NiO-ZnO-TiO2 system formed the spinel structure and the illmenite structure appeared in NiO-TiO2 system.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.21-24
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• 2017

Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type $SnO_2$. Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide ($SnO_2$) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at $150^{\circ}C$, ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150. This is the middle level in compared with those of ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The electrical properties of ZTO followed those of $SnO_2$, which acts a an enhancer in the oxide semiconductor.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1455-1458
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• 1997

In order to promote CO gas sensitivity, $SnO_2$ added ZnO prepared. The electrical conductivities and dielectric constants decreased by increasing $SnO_2$ content in air. The electrical conductivities in 1000ppm CO atmosphere were larger than in dry air. The measured CO sensitivities were $1{\sim}15.2$ at $100^{\circ}C{\sim}480^{\circ}C$. The maximum CO sensitivity of 15mol% $SnO_2$ added ZnO was 15.2 at $305^{\circ}C$.

• Transactions of Materials Processing
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• v.21 no.5
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• pp.324-329
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• 2012

Mg-(9-x)Sn-xAl-1Zn (x=1, 2, 3 and 4 wt.%) alloys were subjected to indirect extrusion, and the microstructure and mechanical properties of the as-extruded Mg-Sn-Al-Zn (TAZ) alloys were investigated. The TAZ 811 alloy exhibited a finer grain structure than the TAZ 541 alloy due to a larger number of Mg2Sn particles, which pinned the grain boundaries and prevented growth of recrystallized grains. The TAZ alloys showed an unusual yield asymmetry behavior. The tension-compression yield asymmetry increased with decreasing average grain size. The TAZ 811 alloy with a small grain size exhibited a larger yield asymmetry than that of the TAZ 541 alloy having a relatively large grain size, which is mainly attributed to the low Al content and large number of second phase particles in the TAZ 811 alloy.