• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.

• Current Photovoltaic Research
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• 제4권1호
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• pp.16-20
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• 2016

$Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.

• 한국표면공학회지
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• 제35권1호
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• pp.39-46
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• 2002

$Cu_2$$ZnSnS_4$(CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. Thin films were deposited on ITO glass substrates using a compact target which were made by $Cu_2$S, ZnS, SnS$_2$ powder at room temperature by rf magnetron sputtering and were annealed in the atmosphere of Ar and $S_2$(g). We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2$$ZnSnS_4$ composition. Structure was coarsened with increasing temperature and (112), (200), (220), (312) planes appeared to conform to all the reflection Kesterite structure. A (112) preferred orientation was advanced with increasing the annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.51 to 1.8eV as the annealing temperature increased. The optical absorption coefficient of the thin film was about $10^4$$cm^{-1}$.

• 한국세라믹학회지
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• 제49권6호
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• pp.663-668
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• 2012

In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of $In_{1.6{\sim}1.8}Zn_{0.2}Sn_{0.2{\sim}0.4}O_3$ (IZTO), $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{\delta}}$(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at $400^{\circ}C$, the electrical resistivity of the film decreased to $6.34{\times}10^{-4}{\Omega}{\cdot}cm$ and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.

• 한국주조공학회지
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• 제35권2호
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• pp.36-43
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• 2015

In this study, the influences of aluminum and tin additions (individual and combined) on corrosion behavior of magnesium alloy have been determined. The studied alloys were fabricated by permanent mold casting method to measure the corrosion properties, a potentiodynamic test, hydrogen evolution test and immersion test were carried out in a 3.5% NaCl solution at pH 7.2. From the results of microstructure analysis, the Mg-9Al-1Zn alloy was found to be composed of ${\alpha}$-Mg and rod-like $Mg_{17}Al_{12}$ phase and the Mg-5Sn-5Al-1Zn alloy was found to be composed of ${\alpha}$-Mg, rod-like $Mg_{17}Al_{12}$ and $Mg_2Sn$ phases. In the case of the Mg-9Sn-1Zn alloy, the microstructure was composed of ${\alpha}$-Mg and eutectic $Mg_2Sn$ phase. With Sn addition (individual and combined), the corrosion resistance of the Mg alloys improved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.203.2-203.2
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• 2013

Hydrothermally grown ZnO nanorods were synthesized with various Sn contents on quartz substrates, ranging from 0 to 2.5 at% in increment 0.5 at%. Scanning electron microscopy (SEM) and ultraviolet (UV)- visible spectroscopy were used to determine the effect of Sn doping on the structural and optical properties. In the SEM images, the nanorods have hexagonal wurzite structure and the diameter of the nanorods increase with increase in the Sn contents. The optical parameters of the Sn-doped ZnO nanorods such as the absorption coefficients, optical bandgaps, Urbach energies, refractive indices, dispersion parameters, dielectric constants, and optical conductivities were gained from the transmittance and reflectance results. In the PL spectra, the NBE peaks in the UV region decrease and blue-shift with increase in the Sn contents. In addition, the DLE peaks in the visible region of the nanorods shift toward low-energy region when the ZnO nanorods doped with various Sn contents.

• 한국표면공학회지
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• 제43권2호
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• pp.64-72
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• 2010

CuSnZn electroplating was investigated as alternative to Ni plating. Evaluation of electrolyte and plating process was performed to control physical characteristics of the film, and to collect practical data for application. Hull-cell test was conducted for basic comparison of two commercialized products and developed product. Based on hull-cell test results, long term test of three electrolytes was performed. Various analysis on long term tested electrolyte and samples have been done. Reliable and practical data was collected using FE-SEM (FEI, Sirion), EDX (ThermoNoran SIX-200E), ICP Spectrometer (GBC Scientifi c, Integra XL), FIB (FEI, Nova600) for anlysis. Physical analysis and reliability test of the long term tested film were also carried out. Through this investigation plating time, plating speed, electrolyte composition, electrolyte metal consumption, hardness and corrosion resistance has been compared. This set of data is used to predict and control the chemical composition of the film and modify the physical characteristics of the CuSnZn alloy.

• 한국결정성장학회지
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• 제26권5호
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• pp.181-187
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• 2016

본 연구에서는 납이나 크롬이 함유되지 않은 친환경적인 물질의 새로운 주황 무기 안료를 개발하고자 하였다. 고상반응법을 이용하여 LPG와 Air를 이용한 환원분위기에서 $TiO_2-SnO-ZnO$계 주황색 무기 안료를 합성하였다. 합성 된 안료들의 특성을 분석하기 위하여 표색계 값인 $L^*a^*b^*$ 값을 측정 후, XRD를 이용하여 결정 상을 분석하였고, SEM을 이용하여 미세구조 관찰하였으며, XPS를 이용하여 원소들의 산화가 상태를 분석하였다. 고상 반응법으로 합성 후 열처리한 $TiO_2-SnO-ZnO$ 안료는 yellow에서 orange-red 사이의 색을 가진다. $TiO_2-SnO-ZnO$ 안료의 결정상 분석 결과, 5가지의 결정상이 혼재하는 것을 볼 수 있는데, $SnO_2$가 cubic과 tetragonal 구조 중 어떤 결정 구조를 가지는지가 발색의 가장 중요한 요인으로 작용하는 것을 확인하였다. XPS를 이용하여 원소들의 산화가 상태를 분석한 결과, $Sn^{4+}$의 비율이 높을수록 안료가 rYR에 가까운 색을 가지는 것을 확인할 수 있다.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.367-373
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• 2007

[ $In_2O_3-ZnO(IZO)$ ] and $In_2O_3-ZnO-SnO_2(IZTO)$ thin films were prepared on EAGLE 2000 glass webs in a Ar gas by RF-Magnetron sputtering. Electrical resistivity and optical transmittance of the films were investigated. IZO, IZTO film showed excellent optical transmittance of 85 % at the visible $400{\sim}$780 nm wavelength. Electrical properties of IZO film have $6.50{\times}10^{-4}{\Omega}cm$ (95 $In_2O_3$ : 5 ZnO wt.%) and $5.20{\times}10^{-4}{\Omega}cm$ (90 : 10 wt.%), IZTO film have $8.00{\times}10^{-4}{\Omega}cm$ (90 $In_2O_3$ : 3 ZnO : 7 $SnO_2$ wt.%) and $6.50{\times}10^{-4}{\Omega}cm$ (90 : 7 : 3 wt.%). Substitution of SnO to ZnO in ITO films showed slightly lower electrical conductivity than ITO film but showed similar optical transmittance.

• 한국표면공학회지
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• 제52권3호
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• pp.145-149
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• 2019

Transparent and conductive ZnO/Ag/SnO2 (ZAS) tri-layer films were deposited onto glass substrates at room temperature by using radio frequency (RF) and direct current (DC) magnetron sputtering. The thickness values of the ZnO and $SnO_2$ thin films were kept constant at 50 nm and the value for Ag interlayer was varied as 5, 10, 15, and 20 nm. In the XRD pattern the diffraction peaks were identified as the (002) and (103) planes of ZnO, while the (111), (200), (220), and (311) planes could be attributed to the Ag interlayer. The optical transmittance and electrical resistivity were dependent on the thickness of the Ag interlayer. The ZAS films with a 10 nm thick Ag interlayer exhibited a higher figure of merit than the other ZAS films prepared in this study. From the observed results, a ZAS film with a 10 nm thick Ag interlayer was believed to be an alternative transparent electrode candidate for various opto-electrical devices.