• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Macromolecular Research
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• v.12 no.1
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• pp.26-31
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• 2004

Using gravimetry, we have studied the diffusion of water into sulfonated polystyrene ionomers. Diffusion coefficients were calculated from Fick's equation. The water sorption was found to be dependent on the ion content (3.6-11 mol％) and the nature of the cation (H, Na, Li, or Zn). The sorption kinetics indicates a slight deviation from Fickian behavior. We used the analytical solution of Fick's equation to evaluate the concentration profiles, which are in good agreement with the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.216-216
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• 2012

The interaction of hydrogen with ZnO single crystal surfaces, ZnO (0001), ZnO (000-1), and ZnO (10-10) has been investigated using temperature programmed desorption (TPD) and X-ray photoelectron Spectroscopy (XPS) techniques. When the ZnO single crystal surfaces are exposed to atomic hydrogen at 200 K, all three surfaces show hydrogen desorption at 450 K. ZnO (0001) surface shows hydrogen desorption feature at ~260 K as the hydrogen exposure is increased. The ZnO (10-10) surface shows low-temperature desorption feature first and the high-temperature desorption feature appears as the hydrogen exposure increases. The ZnO (000-1) surface does not show any lower temperature hydrogen desorption. We will report the adsorption configuration of hydrogen atoms on ZnO single crystal surfaces with different surfaces structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• Korean Journal of Optics and Photonics
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• v.12 no.5
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• pp.394-400
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• 2001

We studied thermal diffusion properties diffusion properties of multi-layered Ge-Sb-Te alloy thin films for optical recording media by solving the thermal equation. Based on the numerical analysis of optical energy distribution and absorption inside multi-layered films including temperature gradient and heat transfer simultaneously, we proposed the optimum parameters of the input laser power and the multi-layer structure as follow. i) Input laser power is 18 mW, ii) laser exposure time is 60 ns, iii) the thicknesses of the lower and the upper ZnS-SiO$_2$are 140 nm and 20~30 nm respectively, and iv) thickness of Ge-Sb-Te recording film is 20 nm.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.116-121
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• 2010

The Mg-Zn-RE alloy cladded with the thin Al1050 sheet was fabricated by means of a roll bonding process at $280^{\circ}C$.Microstructures and mechanical properties of the clad sheets were investigated. After heat treatment at $230^{\circ}C$ for 30 min, an Mg-rich diffusion layer with about $2{\mu}m$ in thickness was developed at the Mg and Al interface. Tensile tests were carried out in a temperature range up to $300^{\circ}C$. The clad sheet exhibits superior elongation to failure not only at room temperature but also at elevated temperatures compared with those of the Mg alloy sheet. For the deformed specimens, interface debonding does not occur and the diffusion layer shows only a few cracks.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.12
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• pp.1656-1662
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• 1988

Auger depth profiles of various In Ga As P/In P heterojunctions grown by liquid phase epitaxial techniques under different growth conditions such as diffusion temperature, diffusion time and dopants, have been obtained. The surface contaminations of In Ga As have been investigated. We found that the samples with Zn diffusion exhibit significant interface grading phenomena including In depletion, Ga richness and P richness at the In Ga As P/In P interface, and In outdiffusion at the surface. The main surface contamination was found to be due to carbon and oxygen species. It can be suggested that Zn gettering takes a major role in such phenomena as interface grading, in depletion, and Ga and P richness at the interface.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.219-221
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• 2005

Sn-9Zn solder balls were bonded to Cu, ENIG (Electroless Nickel/Immersion Gold) and electrolytic Au/Ni pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Au/Ni/Cu substrate, an $AuZn_{3}$ IMC layer formed at the interface due to the fast reaction between Au and Zn. In addition, the $AuZn_{3}$ IMC layer became detached from the interface after reflow. When the aging time was extended to 100 h, $Ni_{5}Zn_{21}$ IMC was observed on the Ni substrate.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.954-958
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• 2000

The characterization of zinc diffusion processes applied for high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severly impacted on the process parameters, such as the amount of Zn$_3$P$_2$ source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.