• Advances in environmental research
• /
• v.1 no.2
• /
• pp.143-151
• /
• 2012

Nitrate removal from aqueous solution was investigated using $ZnCl_2$ and phosphoric acid activated carbon developed from pomegranate peel with particle size 0.4 mm. Potassium nitrate solution was used in batch adsorption experiments for nitrate removal from water. The effects of activated carbon dosage, time of contact, and pH were studied. The equilibrium time was fond to be 45 min. Two theoretical adsorption isotherms namely Langmuir and Freundlich were used to describe the experimental results. The Langmuir fit the isotherm with the theoretical adsorption capacity ($q_t$) was fond 78.125 mg g-1. Adsorption kinetics data were modeled using the pseudo-first, pseudo-second order, and intraparticle diffusion models. The results indicate that the second-order model best describes adsorption kinetic data. Results show activated carbon produced from pomegranate is effective for removal of nitrate from aqueous solution.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1249-1251
• /
• 1998

We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

• Journal of Welding and Joining
• /
• v.31 no.3
• /
• pp.17-21
• /
• 2013

Sn whiskers are one of the serious causes of the failure of electronics. Sn whiskers grow spontaneously from Sn-based, lead-free finished surfaces, even at room temperature. A primary factor of these Sn whiskers growth is compressive stress, which enhances the diffusion of Sn or other elements. The sources of compressive stress are the growth of non-uniform large intermetallic compounds along the interface between the Sn grain boundary and Cu substrate. Recent studies revealed the methods for reducing Sn whisker growth. This paper gives an overview about recent researches for mitigation methods of Sn whisker growth during nearly room temperature storage.

• Proceedings of the Optical Society of Korea Conference
• /
• 1989.02a
• /
• pp.172-175
• /
• 1989

1.3${\mu}{\textrm}{m}$ surface-emitting GaInAsP/InP LED was fabricated by two-phase supercooling LPE technique. The lattice mismatch of the grown DH wafer was typically 0.03%. The processes involve SiO2 CVD, lithography, Zn diffusion, lift-off, lapping, annealing, and wire bonding. The fabricated LED shows the optical power of 600㎼ at 70mA driving current, differential resistance of 4$\Omega$, the f3dB of 35MHz, and the FWHM of 1040{{{{ ANGSTROM }}. The peak wavelength of the fabricated LED was at 1.29${\mu}{\textrm}{m}$(100mA).

• Proceedings of the Optical Society of Korea Conference
• /
• 2003.07a
• /
• pp.100-101
• /
• 2003

본 논문은 초고속 광통신용 검출기로 사용되고 있는 InP／InGaAs Avalanche Photodiode (APD)에 대한 연구로서 구조 변화에 따른 APD의 특성에 대해 연구하였다. 채택된 APB의 기본 구조는 Separated Absorption, Grading, Charge and Multiplication (SAGCM)구조로 u-InP 의 두께 3.5$\mu\textrm{m}$에~2.9$\mu\textrm{m}$ 만큼 Zn diffusion 하였으며, u-InGaAs 의 흡수층 두께는 0.8$\mu\textrm{m}$ 로 하였다. charge sheet 층의 도핑 농도는 ~ 3.5 $\times$ 10／sup 12／／cm／sup 2／ 이고, 전극 구조는 back side illumination type이다. (중략)

• Journal of the Mineralogical Society of Korea
• /
• v.25 no.2
• /
• pp.85-94
• /
• 2012

The $AsO_4$ ion in acid mine drainage has been known to substitute for $SO_4$ in schwertmannite and prevent schwertmannite from being converted to goethite. There have been studies on the heavy metal sorption on schwertmannite, but no experimental results have been reported on the characteristics of heavy metal sorption on $AsO_4$-substituted schwertmannite. In this study, we conducted sorption experiments of Cu, Pb, and Zn on the $AsO_4$-substituted schwertmannite at pH 4 and 6 in the solution of 3, 10, 30, and 100 mg/L concentrations. For all heavy metals, the sorbed heavy metals significantly increase at pH 6 compared with at pH 4. At both pH 4 and 6, Pb shows the highest sorption capacity and those of Cu and Zn are similar. With increasing time, the sorbed heavy meal contents increase too. However, in the case of Zn, the most sorptions occur at the initial stage and no significant increase is observed with time. Among the concentration ranges in which we conducted the experiment, the increasing trend is clear in high concentrated solutions such as 100 mg/L. We applied several sorption kinetic model and it shows that the diffusion process may be the most important factor controlling the sorption kinetics of Cu, Pb, and Zn on $AsO_4$-substituted schwertmannite. Considering the previous results that pure schwertmannite has similar sorption capacity for all three heavy metals at pH 6 and has higher sorption capacity for Cu and Pb than Zn at pH 4, our experiments indicates that substitution of $AsO_4$ for $SO_4$ on schwertmannite changes surface and sorption characteristics of schwertmannite. It also shows that $AsO_4$ contributes not only to the stability of schwertmannite, but also to the mobility of heavy metals in acid mine drainage.

• Restorative Dentistry and Endodontics
• /
• v.33 no.4
• /
• pp.369-376
• /
• 2008

The aim of this study was to compare the compositions and cytotoxicity of white ProRoot MTA (white mineral trioxide aggregate) and 3 kinds of Portland cements. The elements, simple oxides and phase compositions of white MTA (WMTA), gray Portland cement (GPC), white Portland cement (WPC) and fast setting cement (FSC) were measured by inductively coupled plasma atomic emission spectrometry (ICP-AES), X-ray fluorescence spectrometry (XRF) and X-ray diffractometry (XRD). Agar diffusion test was carried out to evaluate the cytotoxicity of WMTA and 3 kinds of Portland cements. The results showed that WMTA and WPC contained far less magnesium (Mg), iron (Fe), manganese (Mn), and zinc (Zn) than GPC and FSC. FSC contained far more aluminum oxide ($Al_2O_3$) than WMTA, GPC, and WPC. WMTA, GPC, WPC and FSC were composed of main phases. such as tricalcicium silicate ($3CaO{\cdot}SiO_2$), dicalcium silicate ($2CaO{\cdot}SiO_2$), tricalcium aluminate ($3CaO{\cdot}Al_2O_3$), and tetracalcium aluminoferrite ($4CaO{\cdot}Al_2O_3{\cdot}Fe_2O_3$). The significance of the differences in cellular response between WMTA, GPC, WPC and FSC was statistically analyzed by Kruskal-Wallis Exact test with Bonferroni' s correction. The result showed no statistically significant difference (p > 0.05). WMTA, GPC, WPC and FSC showed similar compositions. However there were notable differences in the content of minor elements. such as aluminum (Al), magnesium, iron, manganese, and zinc. These differences might influence the physical properties of cements.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.289.2-289.2
• /
• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• Journal of the Korean institute of surface engineering
• /
• v.40 no.1
• /
• pp.23-31
• /
• 2007

The objective of this study is to investigate the effect of Al addition on the reaction behavior of cobalt with molten zinc. Pure cobalt specimen was immersion tested in the three kinds of molten zinc (pure, 0.12%Al added and 0.24%Al added) baths at $460^{\circ}C,\;490^{\circ}C\;and\;520^{\circ}C$. For the understanding of degradation processes, specimens were analyzed with scanning electron microscope (SEM) and energy dispersive spectrum (EDS), and electrochemical stripping method. When 0.12% and 0.24% Al was added in molten zinc baths, three intermetallic compounds layers of ${\gamma},\;{\gamma}_1,\;and\;{\gamma}_2$ were formed on the Co matrix and ${\beta}_1$ layer was not formed between the Co matrix and the ${\gamma}$ layer. Particles of CoAl intermetallic compound were formed at the interface between the ${\gamma}_2$ layer and zinc melt and they did not adhere to the Co-Zn intermetallic layer. Weight loss of the Co specimen increased as Al content in the molten zinc increased and the relationship of weight loss vs. immersion time followed parabolic rate law. Rate controlling process for the reaction rate of Co with Al added molten zinc was analyzed as the diffusion process of Al atom through a boundary layer between the ${\gamma}_2$ layer and the Al added zinc melt.

• Journal of the Korean Chemical Society
• /
• v.23 no.3
• /
• pp.180-185
• /
• 1979

Electrochemical reduction behavior from 2-butyne-1, 4-diol (BID) to 2-butene-1,4-diol (BED) by the use of various cathodes, such as Ti, Zr, Ni, Pt, Cu, Ag, Au, Zn, Hg, Pb and graphite has been studied. It has been found that cathodic polarization curve with metal of IB subgroup such as Cu, Ag and Au consisted of one wave in BID-alkaline solution, whereas it was not formed any wave in BED solution. Therefore, it was found that the cathode which was the most suitable in order to proceed in this reaction was Cu, Ag and Au. At cyclic voltammetry using a silver cathode in BID-alkaline solution, the current of the peak was proportional to square root of the sweep rate of potential and also proportional to concentration of BID. Activation energy was calculated for 3.75 kcal/mole from the plot of log $I_l$ vs. 1/T. Consequently, the reduction current of BID with a silver cathode in alkaline solution was found the diffusion current.