• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.206.2-206.2
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• 2013

무기물/유기물 나노복합체로 제작한 유기 쌍안정성 형태의 메모리 소자는 공정이 단순하고 뛰어난 유연성을 갖고 있기 때문에 플렉서블 메모리 소자에서 많은 연구가 진행되고 있다. 그러나 다양한 연구에도 불구하고 절연성 고분자 박막 내부에 분산 된 나노입자를 이용하여 제작한 저항성 구조의 비휘발성 메모리 소자의 전하수송 메커니즘에 대한 연구는 미흡하다. 본 연구에서는 CuInS2 (CIS)/ZnS 나노입자가 분산되어 있는 절연성 고분자 박막을 사용한 기억소자의 전하수송 메커니즘을 규명하였다. 본 연구는 indium-tin-oxide (ITO)가 코팅된 플렉서블 polyethylene terephthalate (PET) 기판을 화학물질로 세척한 후 CIS/ZnS 나노입자와 절연성 고분자인 poly(N-vinylcarbazole)가 혼합된 용액을 스핀코팅 방법으로 도포했다. 도포된 용액에 열처리를 하여 용매를 제거한 후, 형성된 박막을 저항 변화 층으로 사용하였다. 제작된 메모리 소자는 Al 상부 전극을 고 진공에서 열 증착 방식을 이용하여 PET/ITO/CIS-ZnS 나노입자가 분산된 절연성 고분자/Al 구조를 갖는 저항성 기억 소자를 제작하였다. 소자의 전류-전압 (I-V) 특성 결과는 같은 전압에서 전도도가 높은 상태 (ON)와 낮은 상태 (OFF)가 존재하는 걸을 관찰하였다. 실험을 통해 두 상태 변화를 일으키는 일정 전압을 가하기 전까지 각각의 ON 또는 OFF 상태를 계속 유지하여 비휘발성 메모리 소자로 활용할 수 있음을 확인 할 수 있었다. ON 또는 OFF 상태의 전기적 스트레스를 측정으로 ON과 OFF 상태가 안정성을 가지는 것을 관찰 하였다. I-V 특성 결과를 기초로 메모리 소자의 전하수송 메커니즘을 규명 하였다.

• Proceedings of the Korean Society of Plant Biotechnology Conference
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• 2005.04a
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• pp.95-95
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• 2005

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.464-470
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• 2004

The electrical stability of ZPCCY-based varistors composing of ZnO-Pr$_{6}$O$_{11}$-CoO-C $r_2$ $O_3$- $Y_2$ $O_3$ ceramics were investigated in various DC accelerated aging stress with sintering times. Sintering time greatly affected electrical properties and stability. Sintering time decreased nonlinear exponent in the range of 51.2∼23.8 and increased leakage current in the range of 1.3∼5.6 ${\mu}$A. The varistor sintered for 1 h exhibited high nonlinearity, whereas relatively low stability. On the contrary, the varistor sintered for 3 h exhibited low nonlinearity, whereas relatively high stability. But the varistor sintered for 2 h exhibited not only good nonlinearity, with nonlinear exponent of 38.6 and leakage current of 3.6 ${\mu}$A but also high stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, and dissipation factor are -0.80%, -1.81 %, +74.4%, and +0.88%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.170-170
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• 2012

최근 주목받고 있는 amorphous InGaZnO (a-IGZO) thin film transistors (TFTs)는 수소가 첨가된 비정질 실리콘 TFT (a-Si;H)에 비해 비정질 상태에서도 높은 이동도와 뛰어난 전기적, 광학적 특성에 의해 큰 주목을 받고 있다. 또한 넓은 밴드갭에 의해 가시광 영역에서 투명한 특성을 보이고, 플라스틱 기판 위에서 구부러지는 성질에 의해 플랫 패널 디스플레이나 능동 유기 발광 소자 (AM-OLED), 투명 디스플레이에 응용되고 있다. 하지만, 실제 디스플레이가 동작하는 동안 스위칭 TFT는 백라이트 또는 외부에서 들어오는 빛에 지속적으로 노출되게 되고, 이 빛에 의해서 TFT 소자의 신뢰성에 악영향을 끼친다. 또한, 디스플레이가 장시간 동안 동작 하면 내부 온도가 상승하게 되고 이에 따른 온도에 의한 신뢰성 문제도 동시에 고려되어야 한다. 특히, 실제 AM-LCD에서 스위칭 TFT는 양의 게이트 전압보다 음의 게이트 전압에 의해서 약 500 배 가량 더 긴 시간의 스트레스를 받기 때문에 음의 게이트 전압에 대한 신뢰성 평가는 대단히 중요한 이슈이다. 스트레스에 의한 문턱 전압의 변화는 게이트 절연막과 반도체 채널 사이의 계면 또는 게이트 절연막의 벌크 트랩에 의한 것으로 게이트 절연막의 선택에 따라서 신뢰성을 효과적으로 개선시킬 수 있다. 본 연구에서는 적층된 $Si_3N_4/SiO_2$ (NO 구조) 이중층 구조를 게이트 절연막으로 사용하고, 완충층의 역할을 하는 $SiO_2$막의 두께에 따른 소자의 전기적 특성 및 신뢰성을 평가하였다. a-IGZO TFT 소자의 전기적 특성과 신뢰성 평가를 위하여 간단한 구조의 pseudo-MOS field effect transistor (${\Psi}$-MOSFET) 방법을 이용하였다. 제작된 소자의 최적화된 $SiO_2$ 완충층의 두께는 20 nm이고 $12.3cm^2/V{\cdot}s$의 유효 전계 이동도, 148 mV/dec의 subthreshold swing, $4.52{\times}10^{11}cm^{-2}$의 계면 트랩, negative bias illumination stress에서 1.23 V의 문턱 전압 변화율, negative bias temperature illumination stress에서 2.06 V의 문턱 전압 변화율을 보여 뛰어난 전기적, 신뢰성 특성을 확인하였다.

• Journal of Life Science
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• v.33 no.11
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• pp.956-965
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• 2023

In plants, there are many CCCH zinc finger proteins consisting of three cysteine residues and one histidine residue, which bind to zinc ions with finger configuration. CCCH-type zinc finger proteins are divided into tandem CCCH-type zinc finger (TZF) and non-TZF proteins: TZF proteins contain exactly two tandem CCCH-type zinc finger motifs whereas non-TZF proteins have fewer or greater than two CCCH-type zinc finger motifs. The functions of TZF genes, especially plant-specific RR-TZF genes, have been well studied in several plants, whereas the functional roles of non-TZF genes have not been adequately researched compared to TZF genes. Many non-TZF genes have been identified as being involved in the responses to biotic and abiotic stresses, such as pathogen, high salt, drought, cold, heat, and oxidative stresses. Some non-TZF proteins bind to RNA and are involved in the post-transcriptional regulation of stress-responsive genes in the cytoplasm. In addition, other non-TZF proteins act as transcriptional activators or repressors that regulate the expression of stress-responsive genes in the nucleus. Despite these studies, stress signal transduction and upstream and downstream genes of non-TZF genes have not been sufficiently researched, suggesting that additional studies of the functions of non-TZF genes' functions in plants' stress responses are needed. In this review, we describe non-TZF genes involved in biotic abiotic stress responses in plants and their molecular functions.

• Transactions of the Korean hydrogen and new energy society
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• v.31 no.1
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• pp.8-22
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• 2020

In this study, we investigated the deactivation characteristics of Ni-Zn-Fe electrodes due to intermittent operation in alkaline water electrolysis. To find suitable method to accelerate deactivation of electrode, the accelerated stress-test (AST) which repeated on/off step was performed with constant current/voltage control. The AST under constant voltage control is suitable to deactivate electrode so it were selected to investigate deactivation of electrode. The AST which repeated on/off step in range of -1.3 V and 0 V was performed and the relationship between oxidation current and electrode deactivation in the off step was investigate. As results, it was confirmed that the nickel and zinc on electrode surface were oxidized due to anodic current which occurred at off step.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.244-252
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• 2002

The electrical and dielectric behavior fort DC accelerated aging stress of P $r_{6}$ $O_{11}$-based Zno varistors cnsisting of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$ were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. The varistor ceramics with increasing sintering temperature were more densified. A more densified varistors leaded to high stability for DC accelerated aging stress. Furthermore, the stability for DC accelerated aging stress was increased with the leakage current and dtan $\delta$/dV decreasing in order of 1325longrightarrow1335longrightarrow1345longrightarrow134$0^{\circ}C$ in sintering temperature. It was found that the stability for DC stress is affected more greatly by the leakage current and dtan $\delta$/dV than the densification. It is considered that the stability of varistors for DC stress can be estimated by considering the factors, such as the densification, leakage current, and dtan $\delta$/dV. As a result, the varistor sintered at 134$0^{\circ}C$ exhibited the highest stability, with %$\Delta$ $V_{lmA}$=-1.54%, %$\Delta$$\alpha$=-2.49%, %$\Delta$ $I_{\ell}$=+240.68%, 5%$\Delta$tan$\delta$=+29.96%.96%.96%.%.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1003-1007
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• 1999

This paper is reported for the stability of ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ based ceramic varistors with $Er_{2}O_{3}$ added in the addition range 0.0 to 2.0 mol%. The varistors sintered at $130^{\circ}C$ exhibited abrupt positive current creep phenomena, which accompany thermal run away within short times, even under weak d.c. stress. As a result, these varistors were completely degraded. On the contrary, the stability of varistors sintered at $1350^{\circ}C$ was far better than that of $1300^{\circ}C$. In particular, the varistor containing 0.5 mol% $Er_{2}O_{3}$ showed a excellent stability, which the variation rate of the varistor voltage, the nonlinear coefficient, and leakage current is below 1%, 2%, and 3.5%, respectively, even under more severe d.c. stress, such as ($0.8V_{1mA}/90^{\circ}C/12h$) + ($0.85V_{1mA}/115^{\circ}C/12h$) + ($0.9V_{1mA}/120^{\circ}C/12h$) + ($0.9V_{1mA}/150^{\circ}C/12h$). Consequently, it is estimated that the basic composition of ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ based varistor contain 0.5 mol% $Er_{2}O_{3}$ will be used to the fabrication of the varistors for high performance and stability in a forthcoming.

• Journal of Aquaculture
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• v.19 no.3
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• pp.157-165
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• 2006

Expression of major antioxidant enzyme (AOE) including Cu/Zn superoxide dismutase (Cu/Zn-SOD), catalase (CAT), glutathione-S-transferase (GST) and 3 glutathione peroxidase isotypes (GPXs) at mRNA levels during heat stress was examined in mud loach (Misgurnus mizolepis) liver. Based on the semi-quantitative RT-PCR, real-time RT-PCR and/or northern dot blot hybridization, the antioxidant enzyme genes were generally up-regulated during elevation of water temperature from $23^{\circ}C$ up to $32^{\circ}C$. GPXs and SOD displayed the most significant elevation of mRNA levels (up to 3 and 2 folds, respectively) while CAT showed the steady-state expression irrespective of thermal conditions. GST represented the relatively moderate response (1.3-fold increase) in its transcription to thermal stress. The transcriptional activation of AOE genes was not significant at the treatment temperature lower than $29^{\circ}C$. Increased mRNA levels of GPX (extracellular form) and SOD genes in the fish exposed to $32^{\circ}C$ was readily detectable 1 day after exposure to heat stress.

• Journal of the Korean Society of Food Science and Nutrition
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• v.30 no.6
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• pp.1215-1219
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• 2001

The present study was conducted to investigate effect of powdered herb of Aster scaber Thunb. (chamchwi) on antioxidant system in ethanol-administrated rats. Four week-old Sprague Dawley male rats which had initial body weights of 97.10$\pm$4.50 g were randomly divided into three groups: control (ethanol treated, vitamin E-deficient group); 5% chamchwi (ethanol-treated, 5% chamchwi powder-supplemented group): 10% chamchwi (ethanol-treated, 10% chamchwi powder-suplemented group). Three groups of rats were suplemented with three experimental diets for 4 weeks and orally administrated 10% ethanol (v/v) daily via drinking water in the last experimental week. Contents of TBARS (thiobarbituric acid reactive substance). glutathione in liver and kidney and serum albumin were determined. The activities of superoxide dismutase (SOD), catalase and glutathione peroxidase (GSH-px) in liver and kidney were also analyzed. Relative weight of liver and spleen to body in chamchwi groups was lower than that in control group (p<0.05). The most remarkable result was that liver TBARS contents in chamchwi groups (5% chamchwi group, 46 $\mu\textrm{g}$ in MDA value; 10% chamchwi group, 35 $\mu\textrm{g}$) were significantly lower (p<0.05) than that in control group (66 $\mu\textrm{g}$). The supplement of chamchwi powder lowered the activity of manganese- superoxide dismutase (Mn-SOD), catalase in liver and GSH-px in kidney. The levels of glutathione in liver and kidney and serum albumin were not significantly different in all experimental groups (p<0.05). These results indicate that powdered herb of Aster scaber decreases lipid peroxidation and acitvity of Mn-SOD increased by alcohol-induced oxidative stress in liver of rats.