• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.307-308
• /
• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.181-185
• /
• 2007

We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as $750{\mu}{\Omega}cm$ for ZnO:Al films with film thickness of 140 nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates.

• Korean Journal of Environmental Agriculture
• /
• v.19 no.5
• /
• pp.401-418
• /
• 2000

1. Production of the artificial zeolite from coal ash Coal fly ash is mainly composed of several oxides including $SiO_2$ and $Al_2O_3$ derived from inorganic compounds remained after burning. As minor components, $Fe_2O_3$ and oxides of Mg, Ca, P, Ti (trace) are also contained in the ash. These components are presented as glass form resulting from fusion in the process of the combustion of coal. In other word, coal ash may refer to a kind of aluminosilicate glass that is known to easily change to zeolite-like materials by hydrothermal reaction. Lots of hot seawater is disposing near thermal power plants after cooling turbine generator periodically. Using seawater in the hydrothermal reaction caused to produce low price artificial zeolite by reduction of sodium hydroxide consumption, heating energy and water cost. As coal ash were reacted hydrothermally, peaks of quartz and mullite in the ash were weakened and disappeared, and new Na-Pl peaks were appeared strengthily. Si-O-Si bonding of the bituminous coal ash was changed to Si-O-Al (and $Fe^{3+}$) bonding by the reaction. Therefore the produced Na-Pl type zeolite had high CEC of 276.7 $cmol^+{\cdot}kg^{-1}$ and well developed molecular sieve structure with low concentration of heavy metals. 2. Utilization of the artificial zeolite in agro-environment The artificial zeolite(1g) could remove 123.5 mg of zinc, 164.7 mg copper, 184.4 mg cadmium and 350.6 mg lead in the synthetic wastewater. The removability is higher 2.8 times in zinc, 3.3 times in copper, 4.7 times in cadmium and 4.8 times in lead than natural zeolite and charcoal powder. When the heavy metals were treated at the ratio of 150 $kg{\cdot}ha^{-1}$ to the rice plant, various growth inhibition were observed; brownish discoloration and death of leaf sheath, growth inhibition in culm length, number of panicles and grains, grain ripening and rice yield. But these growth inhibition was greatly alleviated by the application of artificial zeolite, therefore, rice yield increased $1.1{\sim}3.2$ times according to the metal kind. In addition, the concentration of heavy metals in the brown rice also lowered by $27{\sim}75%$. Artificial Granular Zeolites (AGZ) was developed for the purification of wastewater. Canon exchange capacity was 126.8 $cmol^+{\cdot}kg^{-1}$. AGZ had Na-Pl peaks mainly with some minor $C_3S$ peaks in X-ray diffractogram. In addition, AGZs had various pore structure that may be adhere the suspended solid and offer microbiological niche to decompose organic pollutants. AGZ could remove ammonium, orthophosphate and heavy metals simultaneously. Mixing ratio of artificial zeolite in AGZs was related positively with removal efficiency of $NH_4\;^+$ and negatively with that of $PO_4\;^{3-}$. Root growth of rice seedling was inhibited severely in the mine wastewater because of strong acidity and high concentration of heavy metals. As AGZ(1 kg) stayed in the wastewater(100L) for 4days, water quality turned into safely for agricultural usage and rice seedlings grew normally.

• Proceedings of the IEEK Conference
• /
• 2001.10a
• /
• pp.106-110
• /
• 2001

Formation of stoichiometric lithium-, nickel-, and zinc- ferrites by calcining organo-metallic precursors a temperature below 40$0^{\circ}C$ is examined using DTA/TG, and XRD techniques. It attempts to simulate th immobilization of metal ions in industrial liquid influents (waste) through the synthesis of stoichiometric spinel ferrites (SSF). Two steps of the SSF formation during thermal treatments are noted. The transformation of magnetite to ${\gamma}$ - Fe$_2$O$_3$and subsequent first formation of SSF were observed at temperatures ranging from 200 to 45$0^{\circ}C$. Th formation of cation-containing ${\gamma}$-Fe$_2$O$_3$and subsequent second formation of the ferrite occurred at temperature ranges of < 45$0^{\circ}C$ and 500 to $650^{\circ}C$, depending on the heating rate used. Then the temperature range of 200t 45$0^{\circ}C$ is critical to the performance of the technique, because a calcination at the range would lead to a complete formation of SSF, avoiding the occurrences of ${\gamma}$-Fe$_2$O$_3$and ion-containing ${\gamma}$-Fe$_2$O$_3$. If not, so $\alpha$-Fe$_2$O$_3$would occur. And annealing at temperature above $650^{\circ}C$ must be employed by which solid-state reactio of $\alpha$-Fe$_2$O$_3$with metal ions (possibly metal oxides) to form SSF can be conducted.

• Journal of the Korean Ceramic Society
• /
• v.51 no.3
• /
• pp.184-189
• /
• 2014

Electric arc furnace dust (EAFD) is a solid waste generated by the steel-scrap recycling process. It mainly consists of zinc oxides (ZnO), alumina ($Al_2O_3$), iron oxides ($Fe_2O_3$), and silica ($SiO_2$). Here we report the preparation and characterization of blue ceramic pigments using EAFD powder as a starting material. $(Zn(EAFD),Co)Al_2O_4$ blue ceramic pigment was prepared by the solid-state reaction method. The color characteristics of the pigment obtained were compared with those of pure $CoAl_2O_4$. The new pigment was characterized using XRD, CIE-$L^*a^*b^*$ color-measurements, SEM, and EDX. The XRD analysis revealed that the $(Zn(EAFD),Co)Al_2O_4$ pigment was composed of mainly the spinel phase of $(Zn,Co)Al_2O_4$. The $Zn(EAFD)_{0.25}Co_{0.75}Al_2O_4$ pigments showed a vivid blue color with a $b^*$ value of -28.64 and a good glaze stability with a transparent glaze.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.168-168
• /
• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Journal of Soil and Groundwater Environment
• /
• v.20 no.4
• /
• pp.83-89
• /
• 2015

Soil samples collected in an area of Gahak Mine were investigated for the characterization of mineralogical and physicochemical properties of contaminants in soils. It is found that soils in the study area are contaminated by lead (Pb), copper (Cu), zinc (Zn), cadmium (Cd), in which their concentrations are 595.3 mg/kg, 184.9 mg/kg, 712.8 mg/kg, and 10.64 mg/kg, respectively. All the concentrations exceed the concern criteria of Korean standard. Upon distribution patterns of metals identified by the sequential extraction procedure, our results show that more than 50% of metals are found as a residual type, and 30% are accounted for the association of Fe/Mn oxides. Interestingly, XRD results show that minium (Pb₃O₄) and cuprite (Cu₂O) are identified in the soil samples, suggesting that the sources of the contaminants for Pb and Cu are these minerals. In SEM images, tens of µm of Pb oxides and Pb silicate-minerals are observed. We, therefore, note that the contamination of metals in the study area results from the direct influx and disturbance of tailings. Our findings indicate that the characterization of physicochemical and mineralogical properties of contaminated soils is a critical factor and plays an important role in optimizing recovery treatments of soils contaminated in mine development areas.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.324-324
• /
• 2012

투명전도체(Transparent Conducting Oxides: TCOs)는 일반적으로 면저항이 $103{\Omega}/sq$ 이하로 전기가 잘 통하며, 가시광선영역인 380~780 nm에서의 투과율이 80% 이상이고, 3.2eV 이상의 밴드갭을 가지는 재료로써, 전기전도도와 가시광선영역에서 투과성이 높아 전기적, 광학적 재료로 관심을 받아 다년간 연구대상이 되어오고 있다. 현재 가장 널리 사용되고 있는 투명전도체(Transparent Conducting Oxides: TCOs) 소재로는 Indium Tin Oxide (ITO)가 가장 각광받고 있지만, Indium의 가격상승과 박막의 열처리를 통해 저항이 증가하는 단점을 가지고 있어 이를 대체 할 새로운 소재 개발이 필요한 상황이다. 그러므로 투명전도체 소재 개발에 있어서 가장 중요한 연구과제는 Indium Tin Oxide(ITO)의 단점을 개선시키고 안정된 고농도의 In-Zn-Sn-O(ITZO) 박막을 성장시키는 것이다. 본 연구에서는 RF스퍼터링법에 의하여 Si wafer에 In-Zn-Sn-O(IZTO)를 $350{\AA}$ 만큼 증착시키고, 1시간 동안 $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$로 각각 열처리 하였다. 박막의 전자적, 광학적 특성은 XPS(X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy)를 이용하여 연구하였다. XPS측정결과, ITZO박막은 In-O, Sn-O and Zn-O의 결합을 가지고 있고, 박막의 열처리를 통해 $400^{\circ}C$에서 Zn2p의 피크가 가장 크게 나타나는 반면 In3d와 Sn3d는 열처리를 했을 때가 Room Temperature에서 보다 피크가 작아지는 것을 확인하였다. 이는 $400^{\circ}C$에서 Zn가 표면에 편석됨을 나타낸다. 그리고 REELS를 이용해 Ep=1500 eV에서의 밴드갭을 얻어보면, 밴드갭은 $3.25{\pm}0.05eV$로 온도에 크게 변화하지 않았다. 또한 QUEELS -Simulation에 의한 광학적 특성 분석 결과, 가시광선영역인 380nm~780nm에서의 투과율이 83%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• Journal of Powder Materials
• /
• v.26 no.5
• /
• pp.375-382
• /
• 2019

Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were $In_2O_3:Ga_2O_3:ZnO$ = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at $1200^{\circ}C$ results in the formation of $InGaZnO_4$, $InGaZn_3O_6$, and $InGaZn_5O_8$ phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at $1450^{\circ}C$ for 12 h. The $InGaZn_3O_6$ ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.37 no.6
• /
• pp.577-582
• /
• 2013

AZO (aluminum-doped zinc oxide) is one of the best candidate materials to replace ITO (indium tin oxide) for TCOs (transparent conductive oxides) used in flat panel displays, organic light-emitting diodes (OLEDs), and organic solar cells (OSCs). In the present study, to apply an AZO thin film to the transparent electrode of an organic solar cell, a low-temperature selective atomic layer deposition (ALD) process was adopted to deposit an AZO thin film on a flexible poly-ethylene-naphthalate (PEN) substrate. The reactive gases for the ALD process were di-ethyl-zinc (DEZ) and tri-methyl-aluminum (TMA) as precursors and H2O as an oxidant. The structural, electrical, and optical characteristics of the AZO thin film were evaluated. From the measured results of the electrical and optical characteristics of the AZO thin films deposited on the PEN substrates by ALD, it was shown that the AZO thin film appeared to be comparable to a commercially used ITO thin film, which confirmed the feasibility of AZO as a TCO for flexible organic solar cells in the near future.