• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.187-187
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• 2012

Solution-processed metal-alloy oxides such as indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) has been extensively researched due to their high electron mobility, environmental stability, optical transparency, and solution-processibility. In spite of their excellent material properties, however, there remains a challenging problem for utilizing IZO or IGZO in electronic devices: the supply shortage of indium (In). The cost of indium is high, what is more, indium is becoming more expensive and scarce and thus strategically important. Therefore, developing an alternative route to improve carrier mobility of solution-processable ZnO is critical and essential. Here, we introduce a simple route to achieve high-performance and low-temperature solution-processed ZnO thin film transistors (TFTs) by employing alkali-metal doping such as Li, Na, K or Rb. Li-doped ZnO TFTs exhibited excellent device performance with a field-effect mobility of $7.3cm^2{\cdot}V-1{\cdot}s-1$ and an on/off current ratio of more than 107. Also, in case of higher drain voltage operation (VD=60V), the field effect mobility increased up to $11.45cm^2{\cdot}V-1{\cdot}s-1$. These all alkali metal doped ZnO TFTs were fabricated at maximum process temperature as low as $300^{\circ}C$. Moreover, low-voltage operating ZnO TFTs was fabricated with the ion gel gate dielectrics. The ultra high capacitance of the ion gel gate dielectrics allowed high on-current operation at low voltage. These devices also showed excellent operational stability.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.289-295
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• 2008

The effect of the alloy elements(Si/Mn) ratio on the coating quality including wettabilty with molten zinc, galvannealing kinetics and crater has been investigated in interstitial-free high strength steel(IFHSS) containing Si and Mn. When the Si/Mn ratio was below 0.75, IF-HSS exhibited a good wettability leading to a good galvannealed coating quality after annealing at $800^{\circ}C$ for 40s in $15%H_2-N_2$ mixed gas with dew point $-60^{\circ}C$. In contrast, the wettability and galvannealed coating quality were deteriorated in the Si/ Mn ratio above 0.75. It is shown that they have relevance to oxides forms by selective oxidation on the steel surface. The oxide particles dispersed on the steel surface with a surface coverage of below 40% resulted in good wettability and galvannealed coating quality. The oxide particle is mainly consisted of $Mn_2SiO_4$ with low contact angle in molten zinc. On the other hand, the continuous oxide layer on the steel surface, such as network- and film-type,caused to poor wettability and galvannealed coating quality. The coverage of oxide layer was above 80%, and its chemical species was $SiO_2$ with high contact angle in molten zinc. Consequently, the Si/Mn alloy ratio played an importance role in galvannealed coating quality of IF-HSS.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.233-242
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• 2023

In recent years, energy-management studies in buildings have proven useful for energy savings. Typically, during heating and cooling, the energy from a given building is lost through its windows. Generally, to block the entry of ultraviolet (UV) and infrared (IR) rays, thin films of deposited metals or metal oxides are used, and the blocking of UV and IR rays by these thin films depends on the materials deposited on them. Therefore, by controlling the thicknesses and densities of the thin films, improving the transmittance of visible light and the blocking of heat rays such as UV and IR may be possible. Such improvements can be realized not only by changing the two-dimensional thin films but also by altering the zero-dimensional (0-D) nanostructures deposited on the films. In this study, 0-D nanoparticles were synthesized using a sol -gel procedure. The synthesized nanoparticles were deposited as deep coatings on polymer and glass substrates. Through spectral analysis in the UV-visible (vis) region, thin-film layers of deposited zinc oxide nanoparticles blocked >95 % of UV rays. For high transmittance in the visible-light region and low transmittance in the IR and UV regions, hybrid multiple layers of silica nanoparticles, zinc oxide particles, and fluorine-doped tin oxide nanoparticles were formed on glass and polymer substrates. Spectrophotometry in the UV-vis-near-IR regions revealed that the substrates prevented heat loss well. The glass and polymer substrates achieved transmittance values of 80 % in the visible-light region, 50 % to 60 % in the IR region, and 90 % in the UV region.

• Clinical and Experimental Reproductive Medicine
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• v.51 no.1
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• pp.20-27
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• 2024

Objective: While sperm freezing (cryopreservation) is an effective method for preserving fertility, it can potentially harm the structure and function of sperm due to an increase in the production of reactive oxygen species. This study aimed to assess the impact of zinc oxide nanoparticles (ZnONPs) and selenium oxide nanoparticles (SeONPs) on various sperm functional parameters, including motility, plasma membrane integrity (PMI), mitochondrial membrane potential (MMP), acrosome membrane integrity (ACi), and malondialdehyde (MDA) levels. Methods: Semen samples were collected from 20 Albino Wistar rats. These samples were then divided into six groups: fresh, cryopreservation control, and groups supplemented with SeONPs (1, 2, 5 ㎍/mL) and ZnONPs (0.1, 1, 10 ㎍/mL). Results: Statistical analysis revealed that all concentrations of SeONPs increased total motility and progressive reduction of MDA levels compared to the cryopreservation control group (p<0.05). However, supplementation with ZnONPs did not affect these parameters (p>0.05). Conversely, supplements of 1 and 2 ㎍/mL SeONPs and 1 ㎍/mL ZnONPs contributed to the improvement of PMI and ACi (p<0.05). Yet, no significant change was observed in MMP with any concentration of SeONPs and ZnONPs compared to the cryopreservation control group (p>0.05). Conclusion: The findings suggest that optimal concentrations of SeONPs may enhance sperm parameters during the freezing process.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.517-520
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• 2006

The leaching behaviors of zinc and manganese oxides of spent alkaline manganeses battery in sulfuric acid solution by using $H_{2}O_{2}$ as a reducing agent were investigated according to the concentration of $H_{2}SO_{4}$, temperature, reaction time, and the amount of $H_{2}O_{2}$. The experimental results of zinc and manganeses dissolution rates obtained without a reducing agent at 100 g/L solid/liquid ratio, 3.0 M $H_{2}SO_{4}$, $60^{\circ}C$ and 200 r.p.m. were 97.7% and 43.5%, respectively. On the other hand, zinc and manganeses dissolution rates obtained by adding 30 mL reducing agent at $60^{\circ}C$ were 99.6% and 97.1%, respectively. The addition of the reducing agent increased the leaching of manganese by two-fold compared to the absence of a reducing agent. In case of adding over 30 mL $H_{2}O_{2}$, however, the leaching rates of zinc and manganeses were independent of reducing agent amounts.

• Clean Technology
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• v.29 no.1
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• pp.46-52
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• 2023

Oxalic acid has been traditionally obtained via the oxidation of carbohydrates using nitric acid and catalysts. However, this process produces a variety of nitrogen oxides during oxidation and requires a separation process due to its various intermediates. These products and additional steps increase the harmfulness and complexity of the process. Recently, the electrochemical reduction of carbon dioxide into oxalic acid has been suggested as an environmentally friendly and efficient technology for the production of oxalic acid. In this electrochemical conversion system, zinc oxalate (ZnC₂O₄) is obtained by the reaction of Zn²⁺ ions produced by Zn oxidation and oxalate ions produced by CO₂ reduction. ZnC₂O₄ can then be converted to form oxalic acid, but this requires the use of a strong acid and heat. In this study, a system was proposed that can easily convert ZnC₂O₄ to oxalic acid without the use of a strong acid while also allowing for easy separation. In addition, this proposed system can also further convert the products into glycolic acid which is a high-value-added chemical. ZnC₂O₄ was effectively separated into Zn(OH)₂ powder and oxalate solution through a chemical treatment and a vacuum filtration process. Then the Zn(OH)₂ and oxalate were electrochemically converted to zinc and glycolic acid, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.108-108
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• 2009

ITO에 사용되는 주된 재료인 인듐의 bixbyite 구조는 TCOs의 전기적 특성에서 매우 중요한 것으로 알려져 있다. 때문에 인듐의 Bixbyite구조를 유지하면서 인듐의 사용량을 줄이기 위해 최적의 Solubility limit에 관해 연구하였다. 이를 위해 In2O3-ZnO-SnO2의 삼성분계 기본 조성에 두가지 물질을 추가로 첨가하여 첨가량에 따른 Solubility limit을 연구하였다. Solubility limit의 측정을 위해 X-ray Diffractometer(XRD)를 사용하였으며, 첨가 원소의 양이 증가할수록 TCOs target의 Latice parameter값은 작아졌다, SEM을 통한 미세구조의 관찰로 원소첨가에 따른 샘플의 소결에너지 변화를 분석할 수 있었다. 제작된 시편의 정성분석 및 Chemical binding Energy를 측정하기 위해 X-ray Photo Spectroscopy (XPS)를 이용하였으며, 전기적인 특성 측정을위해 4-Point prove mesurement 방법을 사용하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.