• Journal of the Korean institute of surface engineering
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• v.31 no.2
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• pp.101-108
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• 1998

The effect of oxidation-reduction heating conditions on coating adherence of hot-dip galvanized steel containing silicon has beeninvestigated. The presence of a stbke sillicon oxide formed on the steel surface has been shown to be very detrimenal to proper wetting by liquid zinc. When the steel has more than the critical sillicon content neeled to from a stable external oxide, the use of oxidation-reduction method has been found successful in obtaining a good quality, coated product with excellence adhreence. This can be explained by the formation of an iron oxide. The iron oxrtion of the scale is reduced, leaving the stable oxides dispersed in a fresh metallic iron surface layer. This reduced iron surface is easily wetted by the liquid zinc and excellent adherence is obtained.

• Journal of the Korean institute of surface engineering
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• v.48 no.1
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• pp.27-32
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• 2015

Advanced high strength steels undergo recrystallization annealing in reducing gas atmosphere before galvanizing to improve mechanical properties. The selective oxidations of elements such as Mn, Si, Cr and Al during annealing decrease wettability of liquid zinc, resulting in bare spots and other defects. In this work, Fe-3wt%Mn steel sheet was annealed at $780^{\circ}C$ for 1200 sec. in 5% $H_2-N_2$ atmosphere and then dipped into zinc bath held at $460^{\circ}C$, which contained 0.2wt% dissolved Al. MnO crystallines in the average size of 200 nm were formed on the surface after annealing. It is estimated that MnO has been detached into bath with the formation and growth of inhibition layer with longer immersion time during galvanizing. No evidence of aluminothermic reduction of MnO has been found in this study.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

• Resources Recycling
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• v.30 no.1
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• pp.66-76
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• 2021

Electric arc furnace dust (EAFD) contains compounds, such as oxides and chlorides, including large quantities of Zn, Pb and Fe. An efficient and stable method for the extraction of metal elements from EAFD is the Rotary Kiln Process. This method is used to recover Zn in the form of crude ZnO (approximately 60%) via the addition of a reducing agent (coke, anthracite) and limestone (for basicity control) to EAFD. This process is commonly used in industry as well as in research and development. Currently, this method is used in many Korean commercial plants, producing approximately 150,000 tons of Crude ZnO per year. The majority of Zn is found in crude ZnO (approximately 76%). In addition components such as Pb, Cd, Sn, In, Fe, Cl, and F are present as oxides, chlorides, and alkaline compounds. This elements have an adverse effect on the zinc smelting process. Therefore, a refining process that eliminates these impurities is essential. In this study, we developed a process technology that efficiently separates Zn and Pb from byproducts (mainly chlorides). A bag filter was used to collect Zn and Pb generated during the dry purification process of crude ZnO. Pure components were recovered as metals or metal carbonate.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.1
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• pp.49-56
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• 2010

In the pyroprocessing of spent nuclear fuels, LiCl-KCl waste salt containing radioactive rare earth chlorides are generated. The radioactive rare earth oxides are recovered by co-oxidative precipitation of rare earth elements. The powder phase of rare eath oxide waste must be immobilized to produce a monolithic wasteform suitable for storage and ultimate disposal. The immobilization of these waste developed in this study involves a solid state sintering of the waste with host borosilicate glass and zinc titanate based ceramic matrix(ZIT). And the rare-earth monazite which synthesised by reaction of ammonium di-hydrogen phosphate with the rare earth oxides waste, were immobilzed with the borosilicate glass. It is shown that the developed ZIT ceramic wasteform is highly resistant the leaching process, high density and thermal conductivity.

• Journal of the Korean Chemical Society
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• v.29 no.1
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• pp.52-60
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• 1985

Oxides of nitrogen (NO$_x$) in exhaust gases was determined by absorbing the gas in alkaline peroxide solution containing 0.03${\%}$ H2O2 and 0.1N NaOH. About 100 ppm of NO$_x$ was rapidly oxidized to NO$_2$ or N$_2$O$_5$ by H$_2$O$_2$ and required a contact time of 2 minutes with the absorbing solution for complete absorption. With vigorous shaking including air or oxygen gas, high concentration of NO$_x$ (>200 ppm) can be absorbed within 30 minutes. The remaining H$_2$O$_2$ affect the absorbance of color solution strongly. However, the excess H$_2$O$_2$ was completely decomposed by zinc powder 0.5g and the sample solution should be adjusted to the pH range 6.1∼6.6 before the reduction so that conversion of nitrate to nitrite ion is possible. The absorbed NO$_x$ is determined colorimetrically by the diazotization-coupling method with sulfonilamide and NEDA as the coupling agent. The sensitivity of the new method was 4.48 ${\times}$ 10$^4$ as molar absorptivity which was high sensitive compared with that obtained for the usual zinc reduction NEDA method with O$_3$. This method was far more rapid, brief and accurate than previously published O$_3$-NEDA method in Korean industrial standard.

• Tuberculosis and Respiratory Diseases
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• v.62 no.4
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• pp.314-317
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• 2007

The Inhalation of certain freshly formed metal oxides can cause metal fume fever, which is an acute, self-limiting, flu-like illness. The most common cause of this syndrome is the inhalation of zinc oxide. The inhalation of zinc oxide can lead to tracheobronchiolitis, chemical pulmonary edema or to respiratory failure and acute respiratory distress syndrome(ARDS). We encountered a 43-years-old man who developed severe dyspnea after inhaling of zinc oxide while working for 5 hours in a closed space. He was diagnosed with ARDS and was treated successfully with glucocorticoid. We report a case of ARDS caused by the inhalation of zinc fumes.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.623-627
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• 2010

Semiconducting metal oxides have been frequently used as gas sensing materials. While zinc oxide is a popular material for such applications, structures such as nanowires, nanorods and nanotubes, due to their large surface area, are natural candidates for use as gas sensors of higher sensitivity. The compound ZnO has been studied, due to its chemical and thermal stability, for use as an n-type semiconducting gas sensor. ZnO has a large exciton binding energy and a large bandgap energy at room temperature. Also, ZnO is sensitive to toxic and combustible gases. The NO gas properties of zinc oxide-single wall carbon nanotube (ZnO-SWCNT) composites were investigated. Fabrication includes the deposition of porous SWCNTs on thermally oxidized $SiO_2$ substrates followed by sputter deposition of Zn and thermal oxidation at $400^{\circ}C$ in oxygen. The Zn films were controlled to 50 nm thicknesses. The effects of microstructure and gas sensing properties were studied for process optimization through comparison of ZnO-SWCNT composites with ZnO film. The basic sensor response behavior to 10 ppm NO gas were checked at different operation temperatures in the range of $150-300^{\circ}C$. The highest sensor responses were observed at $300^{\circ}C$ in ZnO film and $250^{\circ}C$ in ZnO-SWCNT composites. The ZnO-SWCNT composite sensor showed a sensor response (~1300%) five times higher than that of pure ZnO thin film sensors at an operation temperature of $250^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.187-187
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• 2012

Solution-processed metal-alloy oxides such as indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) has been extensively researched due to their high electron mobility, environmental stability, optical transparency, and solution-processibility. In spite of their excellent material properties, however, there remains a challenging problem for utilizing IZO or IGZO in electronic devices: the supply shortage of indium (In). The cost of indium is high, what is more, indium is becoming more expensive and scarce and thus strategically important. Therefore, developing an alternative route to improve carrier mobility of solution-processable ZnO is critical and essential. Here, we introduce a simple route to achieve high-performance and low-temperature solution-processed ZnO thin film transistors (TFTs) by employing alkali-metal doping such as Li, Na, K or Rb. Li-doped ZnO TFTs exhibited excellent device performance with a field-effect mobility of $7.3cm^2{\cdot}V-1{\cdot}s-1$ and an on/off current ratio of more than 107. Also, in case of higher drain voltage operation (VD=60V), the field effect mobility increased up to $11.45cm^2{\cdot}V-1{\cdot}s-1$. These all alkali metal doped ZnO TFTs were fabricated at maximum process temperature as low as $300^{\circ}C$. Moreover, low-voltage operating ZnO TFTs was fabricated with the ion gel gate dielectrics. The ultra high capacitance of the ion gel gate dielectrics allowed high on-current operation at low voltage. These devices also showed excellent operational stability.