• Applied Chemistry for Engineering
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• v.23 no.3
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• pp.271-278
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• 2012

In this work, we have prepared the nanocomposite by the reaction of mica and zinc oxide, and investigated the application of nanocomposite to UV protecting creams. Mica treated with 3-aminopropyltrimethoxysilane (APTMS) reacted with 1,4-phenylenediisothiocyanate (PDC) to give -N=C=S functionalized surface, which was further reacted with zinc oxides coated with APTMS to give mica-zinc oxide nanocomposites. The composites were characterized by EA, EDS, TGA, SEM, zeta potential measurement, powder XRD, and DRS UV/Vis analyses. Finally, we measured transmittances of ultraviolet protection creams manufactured by using mica composite covered with zinc oxides in the range of 280~400 nm. The nanocomposites developed in this work might be applicable as inorganic hybrid materials for UV protecting creams.

• Journal of Sensor Science and Technology
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• v.19 no.5
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• pp.356-360
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• 2010

Due to the high surface-to-volume ratio, the 3-dimensional(3D) nanostructures of metal oxides are regarded as the best candidate materials for the chemical gas sensors. Here we have synthesised flower-like 3D zinc oxide nanostructures through a simple hydrothermal route. Specific surface area of the 3D zinc oxide nanostructures synthesised in different pH values from 9.0 to 12.0 were evaluated by using a BET analyzer and the results were compared with that of a zinc oxide thin film fabricated by rf sputtering. Using interdigitated electrodes, superior CO gas sensing properties of the 3D zinc oxide nanostructures on the ZnO thin film to those of the ZnO thin film were demonstrated.

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2711-2717
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• 2024

The current work aims to fabricate metal oxide-doped (PbO, Fe₂O₃, MgO, and Al₂O₃, each of which boasts a purity of 99%) zinc barium borate glasses through the melt quenching technique at the 1000 ℃ melting temperature. The results showed that adding 5 mol.% of metal oxides PbO, Fe₂O₃, Al₂O₃, and MgO increases the density of the zinc barium borate glasses. Additionally, the fabricated glasses' mechanical properties were determined based on the Makishima-Mackenzie model, which proved that the highest mechanical properties were achieved for glasses doped with Al₂O₃ compounds. The mechanical moduli for the glasses doped with Al₂O₃ reach 80.95 GPa (Young), 59.90 GPa (bulk), 31.75 GPa (shear), and 102.23 GPa (longitudinal). Additionally, the Al₂O₃-doped glasses' microhardness reaches 4.77 GPa. Moreover, estimation of the fabricated glasses' gamma-ray shielding capacity utilized Monte Carlo simulation. The highest linear attenuation coefficients are 29.132, 19.906, 19.243, and 18.923 cm^-1 obtained at 0.033 MeV for glasses dopped by PbO, Fe₂O₃, MgO, and Al₂O₃, respectively. Therefore, glasses doped with 5 mol.% of PbO have high gamma-ray shielding capacities followed by glasses doped by Fe₂O₃.

• Resources Recycling
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• v.1 no.1
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• pp.37-43
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• 1992

The submerged injection smelting process was performed to recover Zn and Pb from steel dust throuth vaporization and to investigate the effect of temperature, slag composition, injection time, gas flow rate, etc. on the recoveries of valuable metals. The results show that vaporation rates of zinc and lead increased at higher temperture and higher moral ratio of ferrous to ferric oxides. In the initial stage of submerged injection of nitrogen gas, the molten slags of the dust have high value of molar ratio of $Fe^{2+}$/$Fe^{3+}$ and hence zinc and lead can be effectively recovered.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.533-537
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• 2009

This paper presents a new method for the improvement of color temperature without the change of the driving scheme using transparent dielectric layers with various metal oxides (CeO$_2$, Co$_3$O$_4$, CuO, Fe$_2$O$_3$, MnO$_2$, NiO) in plasma display panels (PDP). In this study, we fabricated ZnO-B$_2$O$_3$-SiO$_2$-Al$_2$O$_3$ glasse with various metal oxides and examined the optical properties of these glasses. As the metal oxides were added to the glasses, the visible transmittances of the dielectric layers decreased and the transmittances in special wavelength regions were reduced at different rates. The change of the transmittance in each wavelength range induced the variation of the visible emission spectra and the change of the color temperature in the PDP. The addition of Co$_3$O$_4$ and CuO slightly decreased the intensity of the blue light, but the intensities of the green and the red light were significantly decreased. Therefore, the color temperature can be improved from 6087K to 7378K and 7057K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.159-159
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• 2008

투명전도체 (transparent conducting oxides: TCOs) 는 일반적으로 $10^3\Omega^{-1}Cm^{-1}$의 전도도, 가시광 영역에서 80%이상의 투명성을 가지는 재료로서, 액정 박막 표시 장치(TFT-LCD), 광기전성 소자, 유기 발광 소자, 에너지 절약 창문, 태양전지(sollar cell) 등 전극으로 사용되고 있다. 최근에는 TCO의 전도도특성을 조절하여 반도성특성을 가진 투명 산화물 반도체(transparent oxide semiconductor: TOS) 을 이용한 박막 트랜지스터 연구가 활발히 진행 중이다. 기존의 실리콘을 기반으로 하는 박막 트랜지스터의 낮은 이동도, 불투명성의 특성을 가지고 있지만, 산화물 박막트랜지스터는 높은 이동도를 발현 할 수 있을 뿐만 아니라, 넓은 밴드갭 에너지를 갖는 산화물을 이용하므로 투명한 특성도 발현 할 수 있어 차세대 디스플레이의 구동소자로서 응용연구가 되고 있다. 이에 본 연구에서는 박막트랜지스터 channel layer로서의 Indium-Tin-Zinc oxide 적용특성을 조사하였다. Indium, Tin, Zinc 의 혼합비율을 다양하게 조절하여 타겟을 제작하였다. 이를 RF magnetron sputtering 를 이용하여 박막으로 성장시켰으며, 기판으로는 glass 기판을 사용하였다. 박막 성장시 아르곤과 산소의 비율을 다양하게 조절하였다. 성장시킨 박막은 Hall effect, Transmittance, Work function, XRD등을 이용하여 전기적, 광학적, 구조특성을 평가하였다. Indium-Tin-Zinc Oxide(ITZO) 을 channel layer로 사용하여 Thin-film transistor 을 제작하여, TFT의 I-V 및 stability특성을 평가하였다.

• Resources Recycling
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• v.7 no.2
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• pp.23-30
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• 1998

Aiming to rccycle the valuable mrnpunenl such as iron oxiiles and carbon from blast turnace sludge, [he physlco-chemical property and classification charactei~stics by hydrocyclone wcie invcstigxted. Carbon in sludge wils analysed to bo cxated mostly in coarse particles of sludge as a form of graphite whereas zinc lnortly in fine particles as zinc sulfides. On thc contrxy, iron oxides wne proved to be in the form of hematite, magnetile without any segregations according to particlc sizes of sludge. From the results of classiIication test using hydmcyclane of 75 mm dm, the recovcry and dczincificatian rate of low zinc sludge wcrc in the range of 67.9-73.6%, and 72.7-86 8%, respectively.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.43-49
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• 2014

Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.

• Journal of Energy Engineering
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• v.12 no.4
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• pp.302-308
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• 2003

The peformence tests of zinc-based desulfurization sorbents using the yellow earth as support for the hot gas clean up were carried out. The zinc-based sorbent with 25 wt％ yellow earth was prepared, and their properties such as the reaction rate, the sulfur capacity and the attrition resistance, were investigated. The reactivity tests for hot gas desulfurization was performed at middle temperatures (sulfidation/regeneration：480$^{\circ}C$/580$^{\circ}C$). During multi-cyclic desulfurization, the deactivation of zinc-based sorbent was decreased by the addition of yellow earth, and their efficiency was enhanced. The ZnO/yellow earth sorbent had high reactivity, good regenerability, long-term durability (about 19 gS/100 g sorbent for 10-cycles) and high attrition resistance (AI=19.1％). It was concluded that the peroperties of zinc-based sorbent were improved by metal oxides (Fe$_2$O$_3$, Na$_2$O, MnO$_2$, etc) in the yellow earth. From these results, it was confirmed that the desulfurization properties of zinc-based sorbents at middle temperatures could be improved by the yellow earth using as support.