• Advances in nano research
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• v.15 no.5
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• pp.385-399
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• 2023

Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.122-128
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• 1997

In this study, the PVDF organic thin films were fabricated by thermal evaporation deposition which is one of the dry-processing methods. The distance from heat source to substrate was 5 cm. The substrate temperature was maintained at $30 ^{\circ}C$ during deposition. The working pressure was about $2.0\times10^{-5}$Torr and the temperature of heat source was increased at the rate of 6 to $8^{\circ}C$/min. At $270^{\circ}C$, the shutter was opened and the deposition of PVDF has stared. As the electrical field intensity increased, $\alpha$ peaks such $530\textrm{cm}^{-1},795\textrm{cm}^{-1},1182\textrm{cm}^{-1}$ decreased, and $\beta$ peaks such as $510\textrm{cm}^{-1},1273\textrm{cm}^{-1}$ increased. The intensity of $530\textrm{cm}^{-1}$ peak was stronger than that of $510\textrm{cm}^{-1}$ peak velow the 71.4 kV/cm, intensity of electrical field. This result showed the characteristic of film mainly due to $\alpha$-mode. According to these results, the molecular structure of PVDF thin film is transformed from $\alpha$-mode with TGT or TG'T to $\beta$-mode with planar zigzag structure TT, as increasing of intensity of electrical field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of Physiology & Pathology in Korean Medicine
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• v.21 no.2
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• pp.379-386
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• 2007

Hado(河圖) and Laks${\u{\lrcorner}}$(書洛) are the diagrams composed of the symbols of numbers from one to ten. And the eight-trigrams, P'al-gwoe divide into two types one is a priori eight-trigrams (先夭八卦) or the Bok-Hui's eight trigrams(伏羲八卦); and the other is a posterior eight trigrams (後夭八卦) or the king Mun's eight trigrams (文王八卦). Relating these two diagrams of Hado and Laks${\u{\lrcorner}}$ with the two types of eight trigrams, they are said to be a term of Ha-Lak-Hui-Mun (HLHM). Each of HLHM represents the process of creating and changing of 'heaven and Earth' and every beingby the symbols of numbers and trigrams. In other words, each of HLHM symbolizes the origin and the structure of the universe as well as the birth of every life represented in the diagram of theosophany (福智學) or Kabbalah. HLHM are also regarded as the origin of l-ching or Book of Change. Hado produces Laks${\u{\lrcorner}}$ through the principle of yin-yang(陰陽). Laks${\u{\lrcorner}}$ produces a priori eight trigrams through the zigzag shapes which means Heaven and Earth are mutually responding. And a priori eight trigrams produce a posteriori eight trigrams through the triangle principle of connecting Heaven and Earth. In this process, Hado and a priori eight trigrams are respectively prior to Laks${\u{\lrcorner}}$ and a posteriori eight trigrams. HLHM represent fractal shape resembling the symbol of five on the center of Hado, or Hado itself. In the dynamic process of HLHM, a diagram of Circle, Quadrangle, and Triangle (CQT) is produced as follows: Circle, the symbol of 'infinify' or Heaven, represents the origin of life or birth. Hadois the symbol of creation. Quadrangle, the symbol of Earth, represents that Laks${\u{\lrcorner}}$is scattered into four directions of front, back, left, and rifht. Quadrangle, which is immovable, represents materiality. Triangle, being described from the eight trigrams, means the movements of the process of 'mutual inclusion' of Circle and Quadrangle. Triangle also means the process of harmonizing human beings with natural law.

• Journal of the Korean Institute of Traditional Landscape Architecture
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• v.37 no.3
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• pp.93-107
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• 2019

The purpose of this paper is to explore the application of Chinese traditional garden space construction principle studied by predecessors in modern park landscape, and to find more methods of traditional garden space construction inheritance and innovation through research. Tian Chaoyang's book "Fifteen Lectures on Chinese Classical Gardens and Modern Translation" mentions that Chinese traditional gardens are combining time and space, so he draws a brief pattern diagram containing the principle of the space construction. According to this principle of space construction, the researchers chose Qujiang Pool Heritage Park, which combines modern and traditional, then analyzed its spatial structure and and space elements. The results are as follows. The complex spatial structure of the park is composed of spatial boundary lines and spatial routes. The complex boundary space is composed of bridges, squares, plants, rows of buildings and other elements. The water space in the center of the park is designed in accordance with the traces of the historical water system, and its natural zigzag shoreline expands the water space. The central water space is divided into the big pool and the small pool, the Yanbo island and Bird island are created respectively. The building at the park boundary connects the park's interior and exterior. Most of the buildings in the park are located in the convex corner of the route or space. Through this research, it can be concluded that Qujiang park also applies the space construction principle combining time and space. And then, the garden elements of Qujiang park are recreating the history and culture of Qin, Han, Sui and Tang dynasties with modern methods, thus creating a park with Chinese regional characteristics. Since the Tang dynasty was the most prosperous period in Qujiang, the park was dominated by Tang culture. Through the research of this paper, we can see that the space construction principle of Qujiang Pool Heritage Park is the inheritance of the space construction principle of Chinese traditional garden. And the landscape element of Qujiang park is the landscape created by combining traditional history and culture, which is the innovative part of modern garden. Through this study, the creation of modern landscape with Chinese characteristics can provide some hints on the direction of inheritance and innovation.