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In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

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• 한국생물공학회:학술대회논문집
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• The Bulletin of The Korean Astronomical Society
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• Proceedings of the KSLP Conference
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• Proceedings of the Korean Society for Applied Microbiology Conference
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• Proceedings of the Korean Society of Plant Biotechnology Conference
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• Proceedings of the Korean Society of Plant Biotechnology Conference
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• 대한예방의학회:학술대회논문집
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• Bulletin of the Korean Space Science Society
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