Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the mechanism of $SiO_2$ film deposition by Laser CVD

레이져 CVD에 의한 $SiO_2$막의 형성기구 모델링에 관한 연구

  • 류지호 (고려대학교 전기공학과) ;
  • 소황영 (고려대학교 전기공학과) ;
  • 김영훈 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1995.07.20
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Abstract

In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

Keywords