• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.791-794
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• 1998

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.635-641
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• 2002

Electrical conduction of $SrZrO_3$ doped with $Y_2O_3$ was measured as a function of gas atmosphere and temperature by impedance spectroscopy. Hydrogen dissolution, due to an enhanced driving force in the presence of oxygen, results in protonation by water incorporation. Proton conductivity increased with water vapor pressure, ${P_w}^{1/2}$. In the pure hydrogen atmosphere, the dissolution of hydrogen,$H_2(g)=2H_{i}$ +2e', is supposed to be driven by a reduced activity of electrons, ascribable to their trapping in oxygen vacancies. The activation energy of electrical conductivity was 50 kJ/mol, in wet argon atmosphere in the temperature range of $600~900^{\circ}C$, similar to those reported for proton conduction in the literature. Grain boundary effect in proton conduction was substantial in the 10% doped case at temperatures lower than $700^{\circ}C$.

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.93-96
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• 2001

The Y- or Yb-doped SrZrO$_3$ proton conductors were fabricated using the powders prepared by the self-propagating high-temperature synthesis (SHS). The electrical conductivity was evaluated from an a.c. impedance measurements. The conductivity of SrZr$_{0.92}$Yb$_{0.08}$O$_{3-\delta}$ was 1.8$\times$10$^{-3}$ Scm$^{-1}$ at $900^{\circ}C$ in dry air atmosphere and its activation energy was 0.50 eV. The conductivity in wet air was larger, compared with the dry air, and the activaton energy of SrZr$_{0.92}$Yb$_{0.08}$O$_{3-\delta}$ in wet air was 0.40 eV.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.24-28
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• 2003

(Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184％ and 15.62%, respectively.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.8-11
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• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.313-313
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.153-156
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their dielectric properties were investigated with variation of composition ratio, doped ZrO$_2$ (0.5, 1.0, 1.5, 2.0, 3.0 wt%) and sintered at 145$0^{\circ}C$. The dielectric constant and loss of the x=0.10 specimen applied field were 19.86 and 0.302 % at 0 V/cm, and 25.937 and 0.339 % at 300 V/cm, respectively. Dielectric constant were increased with increased applied field and decreased with increased frequency, and dielectric loss were within 0.1% at applied 800 MHz, respectively. all specimens showed fairly good applied field. Although, dielectric constant and loss of all specimen showed to tend of nearly the same. same.