• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.4
• /
• pp.15-22
• /
• 2004

This paper presents the channel analysis considering power distribution network(PDN) system of PCB. For achieve the target PDN system we proposed the useful design approach for acquiring the characteristic target of power distribution network in overall frequency ranges. The proposed method is based on the hierarchical approach related to frequency ranges and the path-based equivalent circuit model to consider the interference of the current paths between the decoupling capacitors and the board through it is a lumped model for fast and easy calculation, experimental results show that the proposed model is almost as precise as the numerical analysis. The analysis of PDN system shows that although the effective inductance of package dominatly affects the power noise and the signal transfer through data channel, the board PDNs also can not be neglected for achieving the accurate channel signaling. Therefore, we must design concurrently the chip, package, and board from the initial spec design of high speed digital system.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.39 no.5
• /
• pp.43-50
• /
• 2002

To improve the current waveform of diode rectifiers, we propose a new operating principle for the voltage -doubler diode rectifiers. In the conventional voltage-doubler rectifier circuit, relatively large capacitors are used to boost the output voltage, while the proposed circuit uses smaller ones and a small reactor not to boost the output voltage but improve the input current waveform. A high input power factor of 97[%] and an efficiency of 98[%] are also obtained. The harmonic guide lines of proposed rectifier is no interfered with inverter switching, resulting in a simple, reliable and low-cost ac-to dc converters in comparison with the boost-type current-improving circuits.It compared conventional pulse-widthmodulated(PWM)inverter with half pulse-widthmodulated (HPWM) inverter. Proposed HPWM inverter eliminated dead-time by lowering switchingloss and holding over-shooting.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.36C no.1
• /
• pp.49-58
• /
• 1999

This paper describes an integrated low pass filter fabricated by using $0.8{\mu}m$ single poly CMOS ASIC technology. The filter has been designed for a 5th-order elliptic switched capacitor filter with cutoff frequency of 5khz, 0.1dB passband ripple. The filter consists of MOS swiches poly capacitors and five CMOS op-amps. For the realization of the SC filter, continuous time transfer function H(s) is obtained from LC passive type, and transfered as discrete time transfer H(z) through bilinear-z transform. Another filter has been designed by capacitor scaling for reduced chip area, considering dynamic range of the op-amp. The test results of two fabricated filters are cutoff frequency of 4.96~4.98khz, 35~38dB gain attenuation and 0.72~0.81dB passband ripple with the ${\pm}2.5V$power supply clock of 50KHz.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.4
• /
• pp.20-26
• /
• 2016

A wireless passive sensor network is a network which, by letting RF sources supply energy to sensor nodes, is - at least theoretically - able to live an eternal life without batteries. Due to the technological immaturity, however, a wireless passive sensor network still has many difficulties; energy scarcity, non-simultaneity of energy reception and data transmission and inefficiency in data transmission occurring at sensor nodes. Considering such practical constraints, in this paper, we propose an elementary MAC scheme supporting many sensor nodes to deliver packets to a sink node. Based on a time structure in which a charging interval for charging capacitors by using received and an acting interval for communicating with a sink node are alternately repeated, the proposed MAC scheme delivers packets to a sink node according to slotted ALOHA. In general, a contention-type scheme tends to exhibit relatively low throughput. Thus, we multilaterally evaluate the throughput performance achieved by the proposed MAC scheme using a simulation method. Simulation results show that the network-wide throughput performance can be enhanced by properly setting the length of acting interval.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.12
• /
• pp.58-65
• /
• 2009

In this paper, we designed high voltage gate drive IC including dead time circuit in which capacitors controlled rising time and falling time, and schimitt-triggers controlled switching voltage. Designed High voltage gate drive IC improves an efficiency of half-bridge converter by decreasing dead time variation against temperature and has variable dead time by the capacitor value. and its power dissipation, which is generated on high side part level shifter, has decreased 52 percent by short pulse generation circuit, and UVLO circuit is designed to prevent false-operation. We simulated by using Spectre of Cadence to verify the proposed circuit and fabricated in a 1.0um process.

• Journal of Sensor Science and Technology
• /
• v.6 no.2
• /
• pp.115-122
• /
• 1997

In this paper, on-chp atomatic tuning circuit, using proposed integration level approximation technique, is designed to tuning of the variation of RC time-constant due to aging or temperature variation, etc. This circuit reduces the error, the difference between code values and real outputs of integrator, which is drawback of presented dual-slope tuning circuit and eliminates modulations of processing signals in integrated circuit due to fixed tuning codes during ordinary operation. This system is made up of simple integrator, A/D converter and digital control circuit and all capacitors are replaced by programed capacitor arrays in this system. This tuning circuit with 4 bit resolution achieves $-9.74{\sim}+9.68%$ of RC time constant error for 50% resistance variation.

• Journal of the Microelectronics and Packaging Society
• /
• v.8 no.4
• /
• pp.59-65
• /
• 2001

Epoxy/$BaTiO_3$composite capacitor films with excellent stability at room temperature, uniform thickness, and electrical properties over a large area ware successfully fabricated. The composite capacitor films with good film formation capability and easy process ability were made from epoxy resin developed for ACF as a matrix and two kinds of $BaTiO_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction (XRD). And the optimum amount of dispersant, phosphate ester, was determined by viscosity measurement of suspension. DSC and dielectric property tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of 7 $\mu \textrm{m}$ thick film with 10 nF/$\textrm{cm}^2$ and low leakage current were successfully demonstrated.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.6
• /
• pp.270-275
• /
• 2019

Mica capacitor is being adopted for high voltage firing unit of guided weapon system because of its superior impact enduring property relative to ceramic capacitor. Reliability of localized mica high voltage capacitors was verified through environmental test like terminal strength test, humidity test, thermal shock test and accelerated life test for application to high voltage firing unit. Failure mode of mica capacitor is a decrease of insulation resistance and its final dielectric breakdown. Main constants of accelerated life model were derived experimentally and voltage constant and activation energy were 5.28 and 0.805 eV respectively. Lifetime of mica capacitor at normal use condition was calculated to be 38.5 years by acceleration factor, 496, and lifetime at accelerated condition and this long lifetime confirmed that mica high voltage capacitor could be applied for firing unit.

• Journal of the Korean Ceramic Society
• /
• v.42 no.2 s.273
• /
• pp.94-98
• /
• 2005

$RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.

• Journal of the Korean Ceramic Society
• /
• v.42 no.10 s.281
• /
• pp.649-653
• /
• 2005

A mono-disperse Ni powders for multilayer ceramic capacitors were prepared in a large scale by solution reduction method using $NiSO_{4}$ $N_{2}$$H_{4}$and NaOH. The exothermic reactions such as Ni-complex formation between highly concentrated $NiSO_{4}$ and $N_{2}$$H_{4}$ and the reduction of $Ni^{2+}$ into Ni provided thermal energy sufficient for spontaneous solution-reduction reaction. Because well-defined Ni particles could be prepared without external heating, the present method was named as 'auto-thermal method'. The formation of Ni­complex, the precipitation of $Ni(OH)_{2}$ gel triggered by NaOH addition, and its reduction into Ni by dissolution-recrystallization route were the reaction mechanism. The preparation of mono-disperse and spherical Ni powder was attributed to uniform distribution of reducing agent $N_{2}$$H_{2}$ within $Ni(OH)_{2}$ gel due to the decomposition of$NiSO_{4}$-$N_{2}$ $H_{4}$ complex.