• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2018년도 전력전자학술대회
• /
• pp.51-53
• /
• 2018

This paper describes the design and implementation of a circuit consisting of a simmer power supply unit and a series trigger unit that can be applicable to xenon lamp driving. An LCC resonant converter based on the continuous conduction mode (CCM) is applied to the simmer circuit and by using the current output control it is possible to maintain the ionization of the lamp which has the negative resistance load characteristic. At the same time, in order to generate a high voltage, a series trigger circuit which has a number of capacitors and diodes is designed. The generated high trigger output voltage could ionize the xenon gas. This paper explains the configuration and features of the integrated circuit system, and verifies the proposed design and stable operation of the xenon lamp. The experimental and simulation results show the not only rationality but also stability of the proposed circuit.

• 전력전자학회논문지
• /
• 제23권5호
• /
• pp.352-358
• /
• 2018

A split-capacitor (SC) dual-active-bridge (DAB) converter is proposed in this study. The DC-link capacitors of input and output are split in the proposed converter. The primary and secondary windings of transformer are connected to the midpoints of the DC-links. Hence, the SC DAB converter can inherently prevent transformer from saturation. Although the switch current stress of the proposed converter is twice that of the conventional DAB converter, the switch voltage stress is reduced by half. Therefore, the proposed converter can reduce switching loss and achieve high efficiency in a high switching frequency. Given the SC structure, the proposed converter can readily be connected to neutral-point-clamped- or half-bridge-type converters. The topology of the proposed converter is presented and the operating principle is analyzed in detail. A 3-kW hardware prototype was built and tested to verify the performance of the proposed converter.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2019년도 추계학술대회
• /
• pp.96-97
• /
• 2019

Pulse Width Modulation (PWM) is a widely adopted technique to drive the motor using the voltage source inverters. Since they generate high frequency Common Mode (CM) Voltage, a high shaft voltage in induction motor is induced which leads to parasitic capacitive currents causing adverse effects such as premature deterioration of ball bearings and high levels of electromagnetic emissions. This paper presents an Active Cancellation Circuit (ACC) which can significantly reduce the CM voltage hence the common mode current in the three phase induction motor drives. In the proposed method the CM voltage is detected by the capacitors and applied to the frame of the motor to cancel the CM voltage hence the CM current. Unlike the conventional methods the proposed method does not insert the transformer in between the inverter and motor, a high power rating three phase transformer is not required and no losses associated with it. In addition the proposed method is applicable to any kind of PWM motor drives regardless of their PWM methods. The effectiveness of the proposed method is proved by the experiments with a three phase induction motor (1.1kW 415V/60Hz) combined with a three phase voltage source inverter modulated by the Space Vector Modulation (SVM).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.17-20
• /
• 1999

The retention and fatigue properties of ferroelectric LiNbO$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$-V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s .

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 C
• /
• pp.908-910
• /
• 1998

Modern AC electric car has PWM(Pulse Width Modulation) -controlled converters, which give rise to higher harmonics. The current harmonics injected from AC electric car is propagated through power feeding circuit. As the feeding circuit is a distributed constant circuit composed of RLC, the capacitance of the feeding circuit and the inductance on the side of power system cause a parallel resonance and a magnification of current harmonics at a specific frequency. The magnified current harmonics usually brings about various problems. That is, the current harmonics makes interference in the adjacent lines of communications and the railway signalling system. Furthermore, in case it flows on the side of power system, not only overheating and vibration at the power capacitors but also wrong operation at the protective devices can occur. Therefore, the exact assessment of the harmonic current flow must be undertaken at design and planning stage for the electric traction systems. From these point of view, this study presents an approach to model and to analyse traction power feeding system focused on the amplification of harmonic current. The proposed algorithm is applied to a standard AT(Auto-transformer)-fed test system in which electric car with PWM-controlled converters is running.

• ETRI Journal
• /
• 제39권5호
• /
• pp.737-745
• /
• 2017

A 6-GHz-to-18-GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a $0.25-{\mu}m$ AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power-added efficiency (PAE) at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse-mode condition of a $100-{\mu}s$ pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W) to 40.4 dBm (11 W) with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.

• 반도체디스플레이기술학회지
• /
• 제9권4호
• /
• pp.1-5
• /
• 2010

The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.

• 반도체디스플레이기술학회지
• /
• 제10권3호
• /
• pp.15-19
• /
• 2011

The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

• ETRI Journal
• /
• 제35권4호
• /
• pp.594-602
• /
• 2013

This paper proposes printed organic one-time programmable read-only memory (PROM). The organic PROM cell consists of a capacitor and an organic p-type metal-oxide semiconductor (PMOS) transistor. Initially, all organic PROM cells with unbroken capacitors store "0." Some organic PROM cells are programmed to "1" by electrically breaking each capacitor with a high voltage. After the capacitor breaking, the current flowing through the PROM cell significantly increases. The memory data is read out by sensing the current in the PROM cell. 16-bit organic PROM cell arrays are fabricated with the printed organic PMOS transistor and capacitor process. The organic PROM cells are programmed with -50 V, and they are read out with -20 V. The area of the 16-bit organic PROM array is 70.6 $mm^2$.

• 대한전자공학회논문지SD
• /
• 제40권11호
• /
• pp.45-53
• /
• 2003

DRAM에서 사용되는 내부 승압 전원 전압과 기판인가 전원 전압 발생기를 공유함으로써 단일 Charge Pump에서 승압 전원과 기판 전원을 동시에 발생시키는 회로를 설계하였다. 이 회로는 0.14um의 DRAM 공정을 사용하여 기존 보다 전력 소모를 30%, 전체 면적을 40% 그리고 Pumping capacitor 면적을 29.6% 각각 감소하였으며 또한 전류 공급 효율을 13.2% 향상 시켰다. Charge Recycling 기법을 적용하여 Pumping capacitor의 Precharge 구간 동안 소모되는 전류를 75% 감소하였다.