• Journal of Power Electronics
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• v.17 no.5
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• pp.1256-1267
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• 2017

A fault tolerant structure and its corresponding control strategy for electromagnetic stirring power supplies are proposed in this paper. The topology structure of the electromagnetic stirring power supply contains two-stages. The fore-stage is the PWM rectifier. The back-stage is the fault tolerant inverter, which is a two-phase three-bridge orthogonal inverter circuit while operating normally. When the power switch devices in the inverter are faulty, the structure of the inverter is reconfigured. The two-phase half bridge inverter circuit is constructed with the remaining power switch devices and DC-link capacitors to keep the system operating after cutting the faulty power switch devices from the system. The corresponding control strategy is proposed to let the system work under both normal and fault conditions. The reliability of the system is improved and the requirement of the electromagnetic stirring process is met. Finally, simulation and experimental results verify the feasibility of the proposed fault tolerant structure and corresponding control strategy.

• Journal of Power Electronics
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• v.18 no.3
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• pp.662-671
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• 2018

This paper presents a new structure for a step up dc-dc converter, which has several advantageous features. Firstly, the input dc source and the clamped capacitor are connected in series to transfer energy to the load through dual voltage multiplier cells. Therefore, the proposed converter can produce a very high voltage and a high conversion efficiency. Secondly, a double voltage clamped circuit is introduced to the primary side of the coupled inductor. The energy of the leakage inductance of the coupled inductor is recycled and the inrush current problem of the clamped circuits can be shared equally by two synchronous clamped capacitors. Therefore, the voltage spike of the switch tube is solved and the current stress of the diode is reduced. Thirdly, dual voltage multiplier cells can absorb the leakage inductance energy of the secondary side of the coupled inductor to obtain a higher efficiency. Fourthly, the active switch turns on at almost zero current and the reverse-recovery problem of the diodes is alleviated due to the leakage inductance, which further improves the conversion efficiency. The operating principles and a steady-state analysis of the continuous, discontinuous and boundary conduction modes are discussed in detail. Finally, the validity of this topology is confirmed by experimental results.

• Journal of Power Electronics
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• v.18 no.3
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• pp.681-693
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• 2018

This paper proposes a soft-switching bidirectional dc-dc converter (BDC) with an auxiliary circuit. The proposed BDC can achieve the zero-voltage switching (ZVS) using an auxiliary circuit in the buck and boost operations. The auxiliary circuit supplies optimal energy for the ZVS operation of the main switches. The auxiliary circuit consists of a resonant inductor, a back-to-back switch and two capacitors. A small-sized resonant inductor and an auxiliary switch with a low-rated voltage can be used in the auxiliary circuit. Zero-current switching (ZCS) turn-on and turn-off of the auxiliary switches are possible. The proposed soft-switching scheme has a look-up table for optimal switching of the auxiliary switches. The proposed strategy properly adjusts the turn-on time of the auxiliary switch according to the load current. The proposed BDC is verified by the results of PSIM simulations and experiments on a 3-kW ZVS BDC system.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.1
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• pp.47-54
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• 2004

A new high voltage DC power supply is proposed. The proposed power supply is constructed with several power converters connected in series. It is easy to obtain high DC voltage for the same structure of each power converter. The output DC power of the proposed power supply can be disconnected from the load within several hundred microseconds at the instant of a load short-circuit fault. The rising time of the output DC voltage is also as small as several hundred microseconds, and there is no overshoot of the voltage because all of the output filter capacitors keep undischarged state even in load short-circuit condition. Therefore, the proposed scheme is suitable for the protection of frequent output short-circuit and fast on/off switching of output DC voltage. The proposed power supply has improved features such as simple structure, high power factor, and reduced size and volume compared with the conventional schemes. The operating principle is described and the validity of the proposed scheme is proved through simulations and experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.370-375
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• 2001

PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.304-308
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• 2002

We demonstrate a simple pulsed $CO_2$ laser with millisecond long pulse duration in a tube at a low pressure of less than 30 Torr. The novel power supply for our laser system switches the voltage of the AC power line (60Hz) directly. The power supply doesn't need elements such as a rectifier bridge, energy-storage capacitors, or a current-limiting resistor in the discharge circuit. To control the laser output power, the pulse repetition rate is adjusted up to 60Hz and the firing angle of SCR(Silicon Controlled Rectifier) gate is varied from 30。 to 150。. A ZCS (Zero Crossing Switch) circuit and a PIC one-chip microprocessor are used to control precisely the gate signal of the SCR. The maximum laser output of 35 W is obtained at a total pressure of 18 Torr, a pulse repetition rate of 60 Hz, and a SCR gate firing angle of 90。 . In addition, the resulting laser pulse width is approximately 3㎳(FWHM). This is a relatively long pulse width, compared with other repetitively pulsed $CO_2$ lasers.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.6
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• pp.288-294
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• 2004

In this paper, a ceramic antenna and diplexer are designed for dual-band handset ap plications. Basically, the antenna is designed by using the meander line configuration. The diplexer presented in this paper is composed of both low- and high-pass filters. We have designed the low- and high-pass filters with attenuation poles to improve the attenuation performances of the diplexer. The attenuation poles are located at each rejection frequency region so as to improve the shrinkage characteristic of the diplexer. In order to accomplish the volume effectiveness, the antenna and the diplexer have been designed and fabricated in a multi-layer structure. The diplexer designed with a multi-layer structure has inductors and capacitors, which are implemented by LTCC (Low Temperature Co-fired Ceramics) process technique. Design of the multi-layer antenna and diplexer has been achieved by employing the full 3-D EM simulation. The designed antenna and diplexer offer excellent return loss and broadband performances with highly isolated rejection performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.120-124
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• 2005

In this work, MOS capacitors were used to study the electrical properties of Mo gate electrode deposited on ZrO$_2$. The workfunctions of Mo gate extracted from C-V curves were appropriate for PMOS. Thermal stability of Mo metal was investigated by analyzing the variations of workfunction and EOT(effective oxide thickness) after 600, 700, and 800 $^{\circ}C$ RTA(rapid thermal annealing). It was found that Mo gate was stable up to 800 $^{\circ}C$ with underlying ZrO$_2$. The resistivities of Mo were 35$\mu$Ω$.$cm∼ 75$\mu$Ω$.$cm. These values are lower than those of heavily doped polysilicon. Based on these measurements, it can be concluded that Mo metal gate with ZrO$_2$ gate insulator is an excellent gate material for PMOS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.3-4
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• 2005

Germanium nanocrystals(NCs) were formed in the silicon dioxide($SiO_2$) on Si layers by Ge implantation and rapid thermal annealing process. The density and mean size of Ge-NCs heated at $800^{\circ}C$ during 10 min were confirmed by High Resolution Transmission Electron Microscopy. Capacitance versus voltage(C-V) measurements of MOS capacitors with single $Al_2O_3$ capping layers were performed in order to study electrical properties. The C-V results exhibit large threshold voltage shift originated by charging effect in Ge-NCs, revealing the possibility that the structure is applicable to Nano Floating Gate Memory(NFGM) devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.338-339
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• 2005

The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.