Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Mo Gate Electrode Deposited on ZrO2 Gate Insulator

ZrO2 게이트 절연막 위에 증착된 Mo 게이트 전극의 특성

  • 강영섭 (한국항공대학교 항공전자공학과) ;
  • 안재홍 (한국항공대학교 항공전자공학과) ;
  • 김재영 (한국항공대학교 항공전자공학과) ;
  • 홍신남 (한국항공대학교 항공전자공학과)
  • Published : 2005.02.01
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Abstract

In this work, MOS capacitors were used to study the electrical properties of Mo gate electrode deposited on ZrO$_2$. The workfunctions of Mo gate extracted from C-V curves were appropriate for PMOS. Thermal stability of Mo metal was investigated by analyzing the variations of workfunction and EOT(effective oxide thickness) after 600, 700, and 800 $^{\circ}C$ RTA(rapid thermal annealing). It was found that Mo gate was stable up to 800 $^{\circ}C$ with underlying ZrO$_2$. The resistivities of Mo were 35$\mu$Ω$.$cm∼ 75$\mu$Ω$.$cm. These values are lower than those of heavily doped polysilicon. Based on these measurements, it can be concluded that Mo metal gate with ZrO$_2$ gate insulator is an excellent gate material for PMOS.

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