• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.198-198
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• 2010

The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Proceedings of the KSME Conference
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• 2000.11b
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• pp.156-161
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• 2000

In this study, quantitative nitric oxide concentration distributions are investigated in the post-flame zone of laminar premixed $CH_4/O_2/N_2$, flames by laser-induced fluorescence (LIF). The measurements are taken in flames for different equivalence ratios varying from $0.8{\sim}1.4$, and flow rate is fixed as 5slpm. The NO A-X (0,0) vibrational band around 226 nm is excited using a XeCl excimer-pumped dye laser. Selecting an appropriate NO transition minimizes interferences from Rayleigh scattering and $O_2$ fluorescence. NO concentration is rised when equivalence ratios increase at different vertical distances form nozzle tip. In any case, the maximum NO concentration reaches the maximum in reaction zone.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.297-300
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• 2005

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.71-74
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• 2006

Discharge of the flat lamp lighting source research arc requested very much. For improving brightness, life time, efficiency of flat lamp, plasma diagnosis of the flat lamp lighting source to understand property of lighting source is very important. distance of discharge electrode is 5.5mm and width is 16.5mm, we measured electron temperature and electron density measured with single langmuir probe in flat lamp. we tested the discharge from 100 Torr to 300 Torr pressure. the Pulse is rectangular pulse with frequency 20kHz and Duty ratio 20%. Resultly, electron temperature decreases and electron density increase as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.512-513
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• 2005

We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene(C60) as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was 2.65% at illumination intensity $100mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.62-63
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of $30cm2/V{\cdot}s$, on/off ratio of 105 and threshold voltage of 5 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.201-201
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• 2000

AC-PDP(Plasma Display Panel)에 사용하는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류에 영향을 받는다. 현재 AC-PDP에는 방전특성의 향상과 VUV 발생을 위하여 He, Ne, Xe 등의 혼합기체가 사용되고 있으며, N 기체를 혼합하여 사용할 경우 더 좋은 발광효율을 얻을 수 있다는 보고가 있다. 이번 실험에서는 (100) 방향으로 배향된 MgO Bulk Crystal과 MgO 보호막의 이차전자방출계수를 ${\gamma}$-FIB 장치로 N2 기체혼합비율에 따라 측정하였다. 혼합기체는 Ne=N2 이원기체를 여러 가지 혼합 비율로 변화시켜가며 실험하였다. MgO 보호막은 실제 21inch 규격의 Panel을 사용하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.139-142
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• 2000

Influence of frequency and duty ratio on electro-optical characteristics are experimentally investigated in surface AC plasma display panels(AC-PDPs) by using the VDS(Versitile Driving Simulator)., in which electrode gap and width are 100 ${\mu}m$ and 260 ${\mu}m$, respectively. The filling gas is Ne-Xe gas mixture, and total pressure 400 Torr. It is found that the response time gets to be fast from 450 ns to 150 ns as pulse-off time of the sustain pulse decreases from 2 ${\mu}s$ to 0.2 ${\mu}s$. Also it is found that the IR(Infra Red) intensity and the luminous decreases as pulse-off time of the sustain pulse increases from 0.2 ${\mu}s$ to 2 ${\mu}s$.

• Journal of the Korean Solar Energy Society
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• v.27 no.1
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• pp.75-81
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• 2007

Steam reforming of methane using Xe-arc solar simulator was studied for the application of concentrated solar energy into chemical reaction. The reactor, a volumetric absorber, consisted of a porous ceramic foam disk coated with commercial reforming catalyst. Operating temperature was in the range of $450\;-\;550^{\circ}C$ and the excess steam ratio to methane was from 3.0 to 5.0. At the steady-state condition, the conversion of methane Increased with temperature in the range of 15 % - 30 % and the experimentally determined conversion was found to be close to theoretical equilibrium conversion. It was also found that the CO selectivity slightly decreased with excess steam ratio. Finally, the conversion of methane decreased significantly with space velocity of reactants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.207-207
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• 2008

ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.