• 한국재료학회지
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• 제12권6호
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• pp.452-457
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• 2002

Titanium oxide films were prepared by RF reactive magnetron sputtering. The effect of sputtering conditions on structural and optical properties was investigated systemically as a function of sputtering pressure(5~20 mTorr) and $O_2/Ar$ flow ratio(0.08~0.4). The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. At low sputtering pressure and $O_2/Ar$ flow ratio, the films had preferred orientations along [101] and [200] directions. As the sputtering pressure and $O_2/Ar$ flow ratio increased, the intensity of the 101 and 200 diffraction peaks decreased gradually. The microstructure of the sputtered films showed the fine grain size (20nm~50nm) and columnar microcrystals perpendicular to the substrate. With increasing the sputtering pressure and decreasing $O_2/Ar$ flow ratio, the sputtered films showed the more porous columnar structure. XPS analysis showed that stoichiometric $TiO_2$ films were deposited at 7 mTorr sputtering pressure and 0.2 $O_2/Ar$ flow ratio. The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. Ellipsometeric analysis showed that the refractive index increased from 2.32 to 2.46 as the sputtering pressure decreased. The packing density calculated using the refractive index varied from 0.923 to 0.976, indicating that $TiO_2$films became denser as the sputtering pressure decreased.

• 멤브레인
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• 제25권4호
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• pp.332-342
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• 2015

본 연구는 역삼투막의 막오염을 해결하기 위하여 실란-에폭시 층을 형성시킨 다층 표면개질법을 이용하여 역삼투막의 내오염성을 향상시키고자 하였다. Sol-gel법을 이용하여 Octyltrimethoxysilane (OcTES)을 막 표면에 가교를 통해 고분자화 하였으며 n = 8인 OcTES의 알킬기가 자발적인 self-assembly를 통하여 막 표면에 가지구조를 형성시켰다. 그 위에 ethylene glycol diglycidyl ether (EGDE)의 ether기를 ring-opening을 통해 막 표면에 친수성을 부여하여 역삼투막의 내오염성을 향상시키고자 하였다. FE-TEM, AFM을 이용하여 막의 단면 및 표면구조 분석을 하였고 막 표면의 ridge and valley 구조와 OcTES, EGDE의 다층 표면개질로 인한 bridge 구조를 확인하였으며, 거칠기의 증가를 통해 막 표면의 가지가 잘 형성되었음을 확인하였다. XPS를 통하여 막 표면의 화학구조에 대한 관찰과 표면개질이 잘 이루어졌음을 확인하였으며, contact angle 분석을 통해 표면개질막의 표면에 친수성이 부여되었음을 확인하였다. EGDE 표면개질 조건 최적화를 진행한 결과 EGDE 농도는 0.5 wt%, ring-opening 온도는 $70^{\circ}C$가 가장 적합하였고, 내오염성 실험 결과 및 막오염지수(MFI)는 SUL-H10, $PA-OcTES_{1.0}$, $PA-OcTES_{1.0}-EGDE_{0.5}$이 68.7, 60.4, 5.4 ($10E-8hr/mL^2$)로 나타나 다층 표면 개질막의 내오염성이 매우 향상되었음을 확인할 수 있었다.

• 한국세라믹학회지
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• 제31권12호
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• 한국진공학회지
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• 제19권1호
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• pp.14-21
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• 2010

Ge은 Si에 비하여 높은 이동도를 갖기 때문에 차세대 고속 metal oxide semiconductor field effect transistors (MOSFETs) 소자를 위한 channel 물질로서 각광받고 있다. 그러나 화학적으로 안정한 게이트 산화막의 부재는 MOS 소자에 Ge channel의 사용에 주요한 장애가 되어왔다. 특히, Ge 기판 위에 고품질의 계면 특성을 갖는 게이트 절연막의 제조는 필수 요구사항이다. 본 연구에서, $HfO_xN_y$ 박막은 Ge 기판 위에 플라즈마 원자층 증착법(plasma-enhanced atomic layer deposition, PEALD)을 이용하여 증착되었다. 플라즈마 원자층 증착공정 동안에 질소는 질소, 산소 혼합 플라즈마를 이용한 in situ 질화법에 의하여 첨가되었다. 산소 플라즈마에 대한 질소 플라즈마의 첨가로 성분비를 조절함으로써 전기적 특성과 계면 성질을 향상시키는데 초점을 맞추어서 연구를 진행하였다. 질소 산소의 비가 1：1이었을 때, EOT의 값의 10% 감소를 갖는 고품질의 소자특성을 보여주었다. X-ray photoemission spectroscopy (XPS)와 high resolution transmission electron microscopy (HR-TEM)를 사용하여 박막의 화학적 결합 구조와 미세구조를 분석하였다.

• 한국재료학회지
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• 제8권10호
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• pp.961-968
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• 1998

상변화형 광디스크의 보호막으로 사용되는 $ZnS-SiO_2$ 유전체막을 RF magnetron 스퍼트링방법에 의하여 제조하는 경우에 기판 바이어스전압의 영향을 조사하기 위하여, 알곤가스 분위기에서 ZnS(80mol%)-$SiO_2$(20mol%)타겟을 사용하여 Si Wafer와 Corning flass 위에 박막을 증착시켰다. 본 실험에서는 여러 실험 변수를 효과적으로 조절하면서 실험의 양을 줄이고 도시의 산포를 동시에 만족시키는 최적조건으로 타겟 RF 출력 200W, 기판 RF 출력 20W, 아르곤 압력 5mTorr과 증착시간 20분을 얻을 수 있었으며, 신뢰구간 95%에서 확인실험을 수행하였다. 증착된 박막의 열적 저항성을 측정하기 위해 $300^{\circ}C$와 $600^{\circ}C$에서 열처리시험을 수행하였고, Spectroscopic Ellipsometry 측정을 통한 광학적 데이터를 바탕으로 Bruggeman EMA(Effective Medium Approximation)방법을 이용하여 기공(void)분률을 측정하였다. 본 연구결과에 의하면 특성치 굴절률에 대하여 기판 바이어스인자와 증착시간 사이에는 서로 교호작용이 강하게 존재함을 확인할 수 있었다. TEM분석과 XRD 분석 결과에 의하면 기판 바이어스를 가한 최적조건에서 증착된 미세조직은 기존의 바이어스를 가하지 않을 조건에서 증착시킨 박막보다 미세한 구조를 가지며, 또한 과도한 바이어스전압은 결정구조의 조대화를 야기시켰다. 그리고 적절한 바이어스전압은 박막의 밀도를 증가시키며, 기공분률을 약 3.7%정도 감소시킴을 확인할 수 있었다.

• 공업화학
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• 제31권2호
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• pp.179-186
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• 2020

이 연구에서는 CO₂ 가스의 흡착 분리를 위해 현무암 기반 제올라이트에 키토산 수용액을 함침하여 키토산/제올라이트 복합체를 제조하였다. 제조한 복합체의 물리화학적 특성은 SEM, 질소 흡착, FT-IR, TGA, XPS로 분석하였다. 또한 부피식 흡착장치를 이용하여 복합체의 CO₂와 N₂ 흡착량을 298 K에서 측정하고 그 결과를 흡착등온식(Langmuir, Freundlich, Sips)과 흡착에너지 분포함수(AED)로 조사하였다. 복합흡착제의 CO₂ 흡착량은 키토산과 제올라이트의 구조적 특성과 복합체 표면에 새롭게 형성된 원소인 N/C와 Al/(Si + Al)의 비율에 상관관계가 있었다. 그리고 CO₂/N₂ 분리 선택도는 Langmuir 흡착등온식과 이상흡착용액이론(IAST)을 이용하여 혼합물 조성이 15 V : 85 V, 50 V : 50 V, 85 V : 15 V인 조건에서 비교하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 한국수소및신에너지학회논문집
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• 제25권6호
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• pp.577-585
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• 2014

Nanorod and particle shape $CeO_2$ were synthesized via hydrothermal process and precipitation method, respectively, and used as supports of Pt catalyst for water gas shift (WGS) reaction. Three different durations (12, 48, and 96h) for hydrothermal process were applied for the preparation of nanorod type $CeO_2$. 1.0 wt% of Pt was loaded on the prepared supports with incipient wetness method prior to the catalytic activity tests that were carried out at a GHSV of $95,541h^{-1}$, and a temperature range of 200 to $360^{\circ}C$. Varying duration of hydrothermal process led to the difference in physical characteristics of $CeO_2$ nanorods, such as aspect ratio, BET surface area, pore diameter, and pore volume. Consequently, the catalytic activities of Pt/$CeO_2$ nanorods were affected by the physical characteristics of the supports and appeared to be in the order of Pt/$CeO_2$(12) > Pt/$CeO_2$(48) > Pt/$CeO_2$(96). The comparison of the catalytic activities and results of the analysis (XPS, XRD, SEM, BET and TPR) for the supports revealed that the activity of the catalysts depends on chemical states of the Pt and the support materials in the temperature range that is lower than $280^{\circ}C$. However, the activity is rather dependent on the physical characteristic of the supports because the increased gas velocity limits the mass transfer of reactants in micropores of the supports.

• 폴리머
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• 제34권6호
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• pp.540-546
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• 2010

본 실험실에서 연구되어진 poly(vinyl alcohol)(PVA)/poly(styrene sulfonic acid-co-maleic acid) (PSSA-MA) 이온교환막에 메탄올 투과도 감소를 위하여 실리카기를 함유하고 또한 프로톤 도너 역할을 할 수 있는 3-(trihydroxysilyl)-1-propanesulfonic acid(THS-PSA)를 도입하여 가교된 PVA/PSSA-MA/THS-PSA 막을 제조하였다. 제조된 막의 내구성 향상을 위하여 500 ppm $F_2$ 기체를 이용하여 시간에 따라 직접불소화를 실시하였으며, 불소기의 도입에 따른 막의 물리화학적 변화를 관찰하기 위하여 접촉각 특정, 열 중량분석 및 X-ray photoelectron spectroscopy(XPS)를 통해 확인하였다. 표면불소화된 PVA/PSSA-MA/THS-PSA막의 전기화학적 특성을 평가하기 위하여 함수율, 이온교환용량, 이온전도도, 메탄올 투과도 측정을 실시하여 상용화된 Nafion 115와 비교하였다. 불소화 시간이 증가함에 따라 도입된 불소의 함량은 최고 4.3%의 함량과 50 nm의 침투 깊이를 나타내었다. 불소화 시간이 60분 경과했을 때 이온전도도는 0.036 S/cm으로 Nafion 115의 0.024보다 향상되었으며, 메탄올 투과도는 $9.26E-08cm^2/s$으로 Nafion의 1.17E-06보다 감소되었음을 확인하였다. 또한 MEA를 제작하여 전류밀도에 따른 셀 전압을 측정하였다.