• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.275-275
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• 2013

Formation and characterization of self-assembled monolayers (SAMs) on various surfaces are the essential basis for many other applications, including molecular switches, biosensors, microfluidics, and fundamental studies in surfaces and interfaces. To improve the performance at these applications, it is a key to control the quantity of each molecule in various mixed SAMs on the surface. In this study, using mixed SAM of carbamate-based hydroquinone (HQ)-PhBr and11-mercaptoundecanol, the quantitative mass spectrometric method of mixed SAM was developed based on comparison study with XPS and FT-IR methods. In addition, our method was applied to another mixed SAM of biotinylated PEG alkane thiol and 11-mercaptoundecanol for verification purpose. Time-of-flight secondary mass spectrometry (ToF-SIMS) analysis was performed to identify and quantify each molecule of mixed SAM along with principal component analysis (PCA). Since there is no matrix effect in the X-ray photoelectron spectroscopy (XPS) and Fourier transform-infrared (FT-IR) techniques, we compared ToF-SIMS results with XPS and FT-IR results. Because PCA results from ToF-SIMS analysis are well matched with XPS and FT-IR results from both mixed SAMs, we are expecting that our method will be useful to identify and quantify each molecule in various mixed SAMs.

• 공업화학
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• 제27권6호
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• pp.627-632
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• 2016

PVDF-PVC 적층필름의 계면접착력을 향상시키기 위한 새로운 방법으로 PVDF 필름 표면에 유전체장벽 코로나 방전을 통한 EMA 단량체 커플링을 시도하였다. EMA 1% 분위기에서 코로나 표면처리한 PVDF 필름을 사용하여 제조한 PVDF-PVC 적층필름의 계면접착력은 코로나 처리하지 않은 PVDF에 비해 현저히 향상되었다. 코로나 방전처리에 의해 PVDF 필름 표면의 접촉각은 현저히 감소하였다. XPS 분석 결과, 코로나 처리에 의해 필름 표면의 탄소와 산소함량은 증가하는 반면 불소 함량은 감소하였다. XPS $C_{1s}$ 피크의 curve fitting 결과, 코로나 방전 처리에 의해 비극성 C-C 결합 탄소와 산소와 결합하는 탄소의 비율은 점차 증가한 반면, 불소와 결합하는 탄소의 비율은 크게 감소하는 경향을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.123-123
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• 1994

• 한국진공학회지
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• 제7권3호
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• pp.176-186
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• 1998

Si 기판 위에 3종의 Pt-Co 합금박막 (Pt66-Co34, Pt40-Co60, Pt18-Co82)과 순수한 Pt, Co 박막 시료를 제작하여 표면 조성분석의 정량화 및 표준화를 위한 표준시료로 제안하 였다. in-istu X-ray photoelectron spectroscopy(XPS)분석에 의해 증착된 이원 합금박막의 조성이 정확히 조절되었으며, 합금박막의 실제 조성은 유도결합플라즈마-원자방출분광법 (inductively coupled plasma-atomic emission spectroscopy: ICP-AES)과 러더퍼드 후방산 란분광법(Ruthford back-scattering spectrometry: RBS)에 의해 결정되었다. in-situ XPS 결과와 ICP에 의한 조성을 비교한 결과 매질 효과를 고려하면 비교적 정확한 조성을 구할 수 있음이 확인되었다. 이 시료를 이용한 XPS와 Auger electron spectroscopy(AES)에 의한 국내 공동분석 결과는 약4%내외의 큰 편차를 보이고 있지만, 평균 조성 값은 약1%의 오차 범위 내에서 두 방법에 의한 결과가 서로 잘 일치하였다. 이온빔 스퍼터링에 의해 Pt조성이 증가된 표면층이 형성되어 정확한 조성분석을 위해서는 선택스퍼터링에 의한 표면 변형을 정량적으로 함을 알았다.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.455-459
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• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

• Transactions on Electrical and Electronic Materials
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• 제3권4호
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• pp.10-15
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• 2002

Surface states of polydimethylsiloxane (PDMS) treated by plasma were investigated by the analysis by x-ray photoelectron spectroscopy (XPS) and surface voltage decay. Plasma treatment causes the silica-like(SiO$\_$x/, x=3∼4) oxidative layer, which is confirmed with XPS, and lowers surface resistivity from 1.78$\times$1014 Ω/square to 1.09$\times$10$\^$13/ Ω/square with increasing the plasma treatment time. By measuring the decay time constant of surface voltage, the calculated surface resistivity was compared with the value directly measured by a voltage-current method, so good agreement between two methods was obtained. It was observed that the plasma treatment led to decrease of the thermal activation energy of the surface conduction from 31.0 kJ/mol of untreated specimen to 21.8 kJ/mol. It is found that our results allow the examination of effects of plasma on electrical properties of PDMS.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.175.1-175.1
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• 2015

CuSn thin films were deposited by rf magnetron co-sputtering method with pure Cu and Sn metal targets with a variety of rf powers. CuSn thin films were studied with a surface profiler (alpha step), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), X-ray diffraction (XRD), and contact angle measurement. The thickness of CuSn thin films was fixed at $200{\pm}10nm$ and deposition rate was calculated by the measured with a surface profiler. From the survey XPS spectra, the characteristic peaks of Cu and Sn were observed. Therefore, CuSn thin films were successfully synthesized on the Si (100) substrate. The oxidation state and chemical environment of Cu and Sn were investigated with the binding energy regions of Cu 2p XPS spectra, Sn 3d XPS spectra, and Cu LMM Auger spectra. Change of the crystallinity of the films was observed with XRD spectra. Using contact angle measurement, surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG).

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.166-166
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• 1996

• 한국결정성장학회지
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• 제13권5호
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• pp.254-259
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• 2003

Sol-gel dip coating법으로 soda lime glass 기판 위에 ATO(antimony-doped tin oxide) 투명전도막을 제조할 때, 기판 위에 형성된 $SiO_2$ barrier 층 및 $N_2$ gas annealing 에 따른 광투과율 및 전기적 특성에 대한 효과를 정량적으로 측정하고, XPS(X-ray photoelectron spectroscopy) 분석을 통해 고찰하였다. $SiO_2$ barrier층을 갖는 glass 기판 위에 코팅된400 nm 두께의 ATO 박막을 질소분위기에서 annealing한 결과, 광 투과율은 84%그리고 전기저항은 약 $5.0\times 10^{-3}\Omega \textrm{cm}$로 측정되었다 XPS 분석결과 이러한 우수한 전기전도성은 $SiO_2$ buffer층이 glass 기판으로부터 Na 이온의 확산을 막아 ATO막 내에 $Na_2SnO_3$ 및 SnO와 같은 2차상 불순물의 형성을 억제하여 막 내부의 Sb의 농도 및 $Sb^{5+}/Sb^{3+}$ 비를 증가시키고, $N_2$ annealing은 $Sb^{5+}$ 도 환원시키지만 $Sn^{4+}$를 환원시키는 효과가 크게 작용하였기 때문으로 사료된다.

• Current Photovoltaic Research
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• 제4권1호
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• pp.21-24
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• 2016

Chalcopyrite based (CIGS) thin films have considered to be a promising candidates for industrial applications. The growth of quality CIGS thin films without secondary phases is very important for further efficiency improvements. But, the identification of complex secondary phases present in the entire film is crucial issue due to the lack of powerful characterization tools. Even though X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and normal Raman spectroscopy provide the information about the secondary phases, they provide insufficient information because of their resolution problem and complexity in analyzation. Among the above tools, a normal Raman spectroscopy is better for analysis of secondary phases. However, Raman signal provide the information in 300 nm depth of film even the thickness of film is > $1{\mu}m$. For this reason, the information from Raman spectroscopy can't represent the properties of whole film. In this regard, the authors introduce a new way for identification of secondary phases in CIGS film using depth Raman analysis. The CIGS thin films were prepared using DC-sputtering followed by selenization process in 10 min time under $1{\times}10^{-3}torr$ pressure. As-prepared films were polished using a dimple grinder which expanded the $2{\mu}m$ thick films into about 1mm that is more than enough to resolve the depth distribution. Raman analysis indicated that the CIGS film showed different secondary phases such as, $CuIn_3Se_5$, $CuInSe_2$, InSe and CuSe, presented in different depths of the film whereas XPS gave complex information about the phases. Therefore, the present work emphasized that the Raman depth profile tool is more efficient for identification of secondary phases in CIGS thin film.