• The Journal of Advanced Prosthodontics
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• v.5 no.4
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• pp.402-408
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• 2013

PURPOSE. The aim of this study was to evaluate the surface properties and in vitro bioactivity to osteoblasts of magnesium and magnesium-hydroxyapatite coated titanium. MATERIALS AND METHODS. Themagnesium (Mg) and magnesium-hydroxyapatite (Mg-HA) coatings on titanium (Ti) substrates were prepared by radio frequency (RF) and direct current (DC) magnetron sputtering.The samples were divided into non-coated smooth Ti (Ti-S group), Mg coatinggroup (Ti-Mg group), and Mg-HA coating group (Ti-MgHA group).The surface properties were evaluated using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The surface roughness was evaluated by atomic force microscopy (AFM). Cell adhesion, cell proliferation and alkaline phosphatase (ALP) activity were evaluated using MC3T3-E1 cells. Reverse transcription polymerase chain reaction (RT-PCR) analysis was performed. RESULTS. Cross-sectional SEM images showed that Mg and Mg-HA depositionson titanium substrates were performed successfully. The surface roughness appeared to be similaramong the three groups. Ti-MgHA and Ti-Mg group had improved cellular responses with regard to the proliferation, alkaline phosphatase (ALP) activity, and bone-associated markers, such as bone sialoprotein (BSP) and osteocalcin (OCN) mRNA compared to those of Ti-S group. However, the differences between Ti-Mg group and Ti-MgHA group were not significant, in spite of the tendency of higher proliferation, ALP activity and BSP expression in Ti-MgHA group. CONCLUSION. Mg and Mg-HAcoatings could stimulate the differentiation into osteoblastic MC3T3-E1 cells, potentially contributing to rapid osseointegration.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.115-115
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• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Journal of Conservation Science
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• v.33 no.5
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• pp.381-390
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• 2017

Desalination is the main focus of the stabilization of iron artifacts. However, drawbacks such as re-corrosion are noted due to the uncertainty in the elimination of the corrosive factors and artifacts. Several studies have been carried out on the effects of corrosion inhibitors to overcome these shortcomings. In this study, the effects of type 3 water treatment on corrosion inhibitors were investigated. Surfaces of samples that contained film corrosion inhibitors on their surfaces were analyzed. The results revealed that the surface rust was removed from the sample of type 1 No. 2 that was mainly composed of phosphate. The average weight reduction rates of re-corrosion samples were 0.58, 0.03, and 0.07% for type 1 No. 2, type 2 No. 2, and type 3 No. 2 respectively. The changes in the $Cl^-$ ion, a corrosive agent were found to be 28.60, -4.08, and -1.94 ppm for type 1 No. 2, type 2 No. 2, and type 3 No. 2 respectively. The water-treated films were analyzed by X-ray photoelectron spectroscopy (XPS). It was found that type 2 No. 2 had less Fe the basis metal, than that in type 3 No. 2 indicating much better film. Moreover, Si content was higher in type 2 No. 2, based on the silicate content, than in type 3 No. 2. They are speculated to be the reason or the formation of a better film. Type 1 No. 2, which is mainly composed of phosphate, would be inappropriate as a metal artifact conservation treatment. It was determined that type 2 No. 2 and type 3 No. 2 water treatments, which are mainly composed of silicate, provided excellent corrosion inhibiting effects. Corrosion inhibitors could be used as emergency treatment agents during the excavation of iron artifacts.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.118-123
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• 2008

In the present study, the effect of oxyfluorination treatment on multi-walled nanotubes (MWNTs) supports was investigated by analyzing surface functional groups. The surface characteristics were determined by Fourier transformed-infrared (FT-IR) and X-ray photoelectron spectroscopy (XPS). After the deposition of platinum nanoparticles on the above treated carbon supports, a crystalline size and a loading level had been investigated. Electrochemical properties of the treated MWNTs-supported Pt (Pt/MWNTs) catalysts were analyzed by current-voltage curve measurements. From the results of surface analysis, an oxygen and fluorine-containing functional group had been introduced to the surface of carbon supports. The oxygen and fluorine contents were the highest value at the treatment of 100 temperature. The Pt/100-MWNTs showed the smallest particle crystalline size of 3.5 nm and the highest loading level of 9.4% at the treatment of 100 temperature. However, the sample treated at the higher temperature showed the larger crystalline size and the lower loading level. This indicated that the crystalline size and the loading level could be controlled by changing the temperature of oxyfluorination treatment. Accordingly, an electrochemical activity was enhanced by increasing the temperature of treatment upto 100, and then decreased in the case of 200 and 300. The highest specific current density of 120 mA/mg had been obtained in the case of Pt/100-MWNTs.

• Polymer(Korea)
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• v.33 no.6
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• pp.602-607
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• 2009

A polyurethane (PU) surface enabling in vivo endothelialization via endothelial progenitor cell (EPC) capture was prepared for cardiovascular applications. To introduce CD34 monoclonal antibody (mAb) inducing EPC adhesion onto a surface, poly (poly (ethylene glycol) acrylate-co-butyl methacrylate) and poly (PEGA-co-BMA) were synthesized and then coated on a surface of PU, followed by immobilizing CD34 mAb. $^1H$-NMR analysis demonstrated that poly(PEGA-co-BMA) copolymers with a desired composition were synthesized. Poly(PEGA-co-BMA)-coated PU was much more effective for the immobilization of CD34 mAb, comparing with PEG-grafted PU prepared in our previous study, as demonstrated by that surface density and activity of CD34 mAb increased over 32 times. Physico-chemical properties of modified PU surfaces were characterized by X-ray photoelectron spectroscopy (XPS), water contact angle, and atomic force microscopy (AFM). The results demonstrated that the poly(PEGA-co-BMA) coating was effective for CD34 mAb immobilization and feasible for applying to cardiovascular biomaterials.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.295-300
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• 2000

Uniform silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening, and the effect of Pd-coated layer on electron emission characteristics was studied. The electron emission from Si field emitter arrays(FEAs) was a little, but improved by removing surface oxide on the FEA, but pronounced drastically by coating a $100-{\AA}-thick$ Pd metal layer. The turn-on voltage in the Pd-coated Si FEAs was reduced by 30 V in comparison with that in uncoated ones. This results from the increase of surface roughness at the tip apex by the Pd coating on Si FEA, via the decrease of the apex radius at which electrons are emitting. The Pd-coated emitters showed superior operating stability over a wide current range to that of the uncoated ones. This suggests that Pd coating enhances the high temperature stability and the surface inertness Si FEA.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• Polymer(Korea)
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• v.36 no.1
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• pp.22-28
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• 2012

Functionalized graphene/epoxy composites were prepared to miprove thermal conductivities of epoxy composites and to maintain electrical insulating property. Graphene oxide (GO) was prepared using Hummers method, and then GO was reacted with aluminum isopropoxide to functionalize $Al(OH)_3$ layer onto GO surface by a simple sol-gel method (Al-GO). GO and Al-GO were characterized by X-ray photoelectron spectroscopy, field emission scanning electron microscopy and transmission electron microscopy. The analyses confirm that GO was coated with a large and dense coverage of $Al(OH)_3$. GO and Al-GO (1 and 3 wt%) were embedded in bisphenol A (DGEBA) to investigate the effects of electrical insulating property. Electrical resistivity showed that Al-GO had better insulating property than GO. Further, the thermal conductivity of GO and Al-GO/epoxy composites was higher than that of neat epoxy resins. In particular, the thermal conductivity of Al-GO/bisphenol F (DGEBF) improved by 23.3% and Al-GO/DGEBA enhanced by 21.8% compared with pure epoxy resins.

• Korean Journal of Materials Research
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• v.33 no.1
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• pp.15-20
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• 2023

'Tracers' are bullets that emit light at the backside so that the shooter can see the trajectory of their flight. These light-emitting bullets allow snipers to hit targets faster and more accurately. Conventional tracers are all combustion type which use the heat generated upon ignition. However, the conventional tracer has a fire risk at the impact site due to the residual flame and has a by-product that can contaminate the inside of the gun and lead to firearm failure. To resolve these problems, it is necessary to develop non-combustion-type tracers that can convert heat to luminance, so-called 'thermoluminescence (TL)'. Here, we highly improve the thermoluminescence properties of MgB₄O₇ through co-doping of Dy³⁺+Ce³⁺ and Dy³⁺+Na⁺. The presence of doping materials (Dy³⁺, Ce³⁺, Na⁺) was confirmed by XPS (X-ray photoelectron spectroscopy). The as-synthesized co-doped MgB₄O₇ was irradiated with a specific radiation dose and heated to 500 ℃under dark conditions. Different thermoluminescence characteristics were exhibited depending on the type or amounts of doping elements, and the highest luminance of 370 cd/m² was obtained when Dy 10 % and Na 5 % were co-doped.