• Title/Summary/Keyword: XG-PON

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Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications

  • Kim, Jong-Deog;Le, Quan;Lee, Mun-Seob;Yoo, Hark;Lee, Dong-Soo;Park, Chang-Soo
    • ETRI Journal
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    • v.31 no.5
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    • pp.622-624
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    • 2009
  • This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.

Recent Trends on Technology and Standardization of 40Gb/s Time and Wavelength Division Multiplexing Passive Optical Network (40Gb/s TWDM-PON 기술 및 표준화 동향)

  • Lee, H.H.;Lee, S.S.;Chung, H.S.;Lee, J.H.
    • Electronics and Telecommunications Trends
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    • v.30 no.1
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    • pp.42-50
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    • 2015
  • PON(Passive Optical Network)은 설치 및 유지보수가 편리하여 광가입자망으로 널리 사용되고 있다. 대표적인 PON 기술로 IEEE에서 표준화된 EPON(Ethernet PON), 10G EPON과 ITU-T에서 표준화된 GPON(Gigabit capable PON), XG-PON 기술이 있다. EPON 및 GPON은 각각 1G급 및 2.5G급 전송속도를 제공하며 한국, 일본, 중국 등 아시아와 북미 등에서 가입자 서비스 및 비즈니스 서비스용으로 사용되고 있다. 2010년대부터 10G급 PON 기술 사용이 증가되고 있으며, 앞으로 가파르게 증가하고 있는 가입자 트래픽량에 대처하기 위해 40G급 또는 100G급 PON 기술이 사용될 것으로 예상된다. 본고에서는 현재 ITU-T에서 표준화가 진행 중인 NG-PON2(Next Generation PON2) 기술 중 주요기술인 TWDM-PON(Time and Wavelength Division Multiplexing-PON) 기술에 대한 국제 표준화 현황 및 국내외 기술개발 현황을 살펴보고자 한다.

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Physical Media Dependent Prototype for 10-Gigabit-Capable PON OLT

  • Kim, Jongdeog;Lee, Jong Jin;Lee, Seihyoung;Kim, Young-Sun
    • ETRI Journal
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    • v.35 no.2
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    • pp.245-252
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    • 2013
  • In this work, we study the physical layer solutions for 10-gigabit-capable passive optical networks (PONs), particularly for an optical link terminal (OLT) including a 10-Gbit/s electroabsorption modulated laser (EML) and a 2.5-Gbit/s burst mode receiver (BM-Rx) in a novel bidirectional optical subassembly (BOSA). As unique features, a bidirectional mini-flat package and a 9-pin TO package are developed for a 10-gigabit-capable PON OLT BOSA composed of a 1,577-nm EML and a 1,270-nm avalanche photodiode BM-Rx, including a single-chip burst mode integrated circuit that is integrated with a transimpedance and limiting amplifier. In the developed prototype, the 10-Gbit/s transmitter and 2.5-Gbit/s receiver characteristics are evaluated and compared with the physical media dependent (PMD) specifications in ITU-T G.987.2 for XG-PON1. By conducting the 10-Gbit/s downstream and 2.5-Gbit/s upstream transmission experiments, we verify that the developed 10-gigabitcapable PON PMD prototype can operate for extended network coverage of up to a 40-km fiber reach.