• Title/Summary/Keyword: X8

Search Result 8,976, Processing Time 0.035 seconds

Decomposition of Triclosan onto E-beam Process using a Design of Experiment(DOE) (전자빔을 이용한 triclosan 제거에 있어서 실험계획법의 이용)

  • Jang, Tae-Bum;Lee, Si-Jin
    • Journal of the Korean GEO-environmental Society
    • /
    • v.13 no.6
    • /
    • pp.51-57
    • /
    • 2012
  • This study investigated on the photolytic degradation of Triclosan by E-beam process. The optimization of process was investigated during a series of batch experiments by design of experiments(DOEs). The DOE was one of the statistical application that was used for designed the response surface to determine the effects of each parameters. The responses were applied as removal rate of Triclosan(%, $Y_1$) and TOC removal rate(%, $Y_2$). Two independent variables were concentration of Triclosan and irradiation intensity that were designed as "$x_1$" and irradiation intensity was designed as "$x_2$". The regression equation in coded parameter between the Triclosan removal efficiencies(%) and TOC removal efficiencies(%) was $Y_1=63-12.4335x_1+15.1835x_2+5.8125x{_1}^2-5.6875x{_2}^2-0.75x_1x_2(R^2=95.1%,\;R^2(Adj)=91.7%)$ and $Y_2=46-8.8462x_1+11.7175x_2-0.75x{_1}^2-6.25x{_2}^2(R^2=98.7%,\;R^2(Adj)=97.7%)$, respectively. The model predictions agreed well with the experimentally observed results $R^2$ and $R^2(Adj)$ over 90% within both of $Y_1$ and $Y_2$. This result shows that the regression model express well about the effects of parameters on E-beam process and the statistical method was successfully applied.

Electron mobility and low temperature magnetoresistance effect in $Si/Si_{1-x}Ge_x$ quantum well devices ($Si/Si_{1-x}Ge_x$Quantum Well 디바이스에서의 전자이동도 및 저온 자기저항효과)

  • 김진영
    • Journal of the Korean Vacuum Society
    • /
    • v.8 no.2
    • /
    • pp.148-152
    • /
    • 1999
  • the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

  • PDF

Characteristics of a Blue Light Emitting Diode with In$_{x}$Ga$_{1-x}$N MQW Structure Grwon by MOCVD (MOCVD로 성장된 In$_{x}$Ga$_{1-x}$N MQW 구조의 청색 발광당이오드의 특성)

  • 이숙헌;배성범;태흥식;이승하;함성호;이용현;이정희
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.35D no.8
    • /
    • pp.24-30
    • /
    • 1998
  • A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

  • PDF

Bipolar Resistance Switching Characteristics of $NiO_{1+x}$ films with Adding Higher-Valence Impurities

  • Kim, Jong-Gi;Son, Hyeon-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2010.06a
    • /
    • pp.370-370
    • /
    • 2010
  • The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.

  • PDF

On the Estimation of the Empirical Distribution Function for Negatively Associated Processes

  • Kim, Tae-Sung;Lee, Seung-Woo;Ko, Mi-Hwa
    • Communications for Statistical Applications and Methods
    • /
    • v.8 no.1
    • /
    • pp.229-235
    • /
    • 2001
  • Let {X$\_$n/, n$\geq$1] be a stationary sequence of negatively associated random variables with distribution function F(x)=P(X$_1$$\leq$x). The empirical distribution function F$\_$n/(x) based on X$_1$, X$_2$,....., X$\_$n/ is proposed as an estimator for F$\_$n/(x). Strong consistency and asymptotic normality of F$\_$n/(x) are studied. We also apply these ideas to estimation of the survival function.

  • PDF

Crystallographic Structure and Dielectric Properties of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$ ($(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$ 세라믹스의 결정학적 구조 및 유전 특성에 관한 연구)

  • 정태석;김호기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1995.05a
    • /
    • pp.5-8
    • /
    • 1995
  • The crystal structure and dielectric propoerties of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$ Ceramics were investigated. Sn substitution reduced the volitility of PbO due to the decrease of the unit cell. The crystal structure of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$ Ceramics was refined based on Orthorhombic Cmmm space group, More than two types of phase transition were observed, These phase transitons make the posicitve and negative temperature coefficient of dielectric constant of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$.

  • PDF

Study of Gasless Combustion Synthesis of the Ti$Si_x$ (x = 0.6, 0.8, 1.0, 2.0) Systems (Ti$Si_x$ (x = 0.6, 0.8, 1.0, 2.0) 계의 비기체 합성법에 관한 연구)

  • Chul Hyun Yo;Sung Joo Lee;Eun Seok Lee;Pyon Mu Sil;Eung Ju Oh
    • Journal of the Korean Chemical Society
    • /
    • v.33 no.4
    • /
    • pp.337-342
    • /
    • 1989
  • Gasless combustion is a vigorous exothermic reaction ignited directly in solid mixture, similar to Thermit reaction. The gasless combustion synthesis has the advantages of rapid processing, energy saving, low processing cost, and high purity of products. The Ti$Si_x$(x = 0.6, 0.8, 1.0, 2.0) systems are prepared by the gasless combustion synthesis without external sintering process. The crystallographic structures of $Ti_5Si_3$, $Ti_5Si_4$ are hexagonal and tetragonal system, respectively. Those of TiSi, $TiSi_2$ are orthorhombic systems. The results of X-ray analysis agree with the JCPDS data. The combustion modes of all combustion reactions are steady state combustions, and the propagation velocities of the combustion waves of $Ti_5Si_3$, $Ti_5Si_4$ and TiSi are greater than 0.6 cm/sec and that of $TiSi_2$ is 0.28 cm/sec.

  • PDF

Effects of Process Conditions on the Color and Firmness of Salted Radish Root (Danmooji) at Model System (모델 시스템을 이용한 제조 조건이 단무지의 색도 및 경도에 미치는 영향)

  • Ku, Kyung-Hyung;Park, Wan-Soo;Lee, Kyung-A
    • Journal of the Korean Society of Food Science and Nutrition
    • /
    • v.34 no.9
    • /
    • pp.1477-1484
    • /
    • 2005
  • The effects of various seasoning components, pH of seasoning solution, heating time and storage temperature were investigated on the color and textural properties of the salted radish root (nanmooji) The effects of individual seasoning components in the salted radish root, additives of polyphosphate (AD3), citric acid (AD5), malic acid (AD2) delayed the color changes and softening more, compared to control soaked in water. On the other hand, additives of potassium sorbate (AD1), succinic acid (AD7), MSG (AD8), saccharin (AD6) accelerated the color changes and softening of the salted radish roots. The effects of pH of seasoning solution($X_1$), and heating time ($X_2$) were central composite design and response surface analysis. R- square represented dependent variables correlated independent variables ($X_1,\;X_2$), showed over 0.8 in the color and area value calculated thickness and firmness of salted radish root. Especially, R- square of 'b' represented 'yellow-green' was 0.899. And the result of crossing analysis of individual independent variables ($X_1,\;X_2$), showed that both independent variables had significant effects on the color and textural changes of the salted radish root. The salted radish root increased its color changes and softening, rapidly at $40^{\circ}C$, compared to the other storage temperatures at most storage periods.

The Development of Absorption Elements of Ceramic Rotors for the Semiconductor Clean Room System (반도체 클린룸용 세라믹 Rotor 흡착제 개발)

  • 서동남;하종필;정미정;문인호;조상준;김익진
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.1 no.2
    • /
    • pp.33-40
    • /
    • 2000
  • The present invention relates to a absorption rotor for removed VOC(volatile organic compound) and humidity in semiconductor clean room system. A absorption rotor medium is made by NaX zeolite and TS-1 zeolite formed on a honeycomb matrix of ceramic papers. The crystallization of NaX zeolite was hydrothermal reaction, and NaX zeolite crystals of a uniform particle size of 5$\mu$m were synthesized that NaX zeolite seed crystals (2~3$\mu$m) added in a batch composition at levels of 3~15 wt$\%$. The seeding resulted in an increase in the fraction of large crystals compared with unseeded batches and successfully led to a uniform NaX zeolite crystal. The microporous zeolite-type titanosilicate(TS-1) was synthesized by different of the reactant solution pH. The pH range of reactant solution has been changed from 10.0 to 11.5 TS-1 zeolite (ETS-10), having a large pore(8~10 $\AA$), was synthesized at 10.4 of pH, since TS-1 zeolite (ETS-4), having a small pore(3~5$\AA$), was synthesized at 11.5 of pH.

  • PDF

Correlation between the Portable X-ray and the Radiation Exposure dose in the Emergency Department: Cohort Study (응급실에서 이동식 단순 X-선 검사와 피폭선량과의 상관관계: 코호트 연구)

  • Kim, Yu Jung;Ahn, Hee Cheol;Sohn, You Dong;Ahn, Ji Yoon;Park, Seung Min;Lee, Won Woong;Lee, Young Hwan
    • Journal of The Korean Society of Clinical Toxicology
    • /
    • v.11 no.2
    • /
    • pp.101-105
    • /
    • 2013
  • Purpose: This study was conducted in order to determine the relationship between the number of portable X-rays and the radiation exposure dose for emergency medical service providers working in the emergency department (ED). Methods: A prospective study was conducted from February 15, 2013 to May 15, 2013 in the ED in an urban hospital. Six residents, seven emergency medical technicians (EMT), and 24 nurses were enrolled. They wore a personal radiation dosimeter on their upper chest while working in the ED, and they stayed away from the portable X-ray unit at a distance of at least 1.8 m when the X-ray beam was generated. Results: The total number of portable x-rays was 2089. The average total radiation exposure dose of emergency medical service providers was $0.504{\pm}0.037$ mSv, and it was highest in the EMT group, 0.85(0.58-1.08) mSv. The average of the total number of portable X-rays was highest in the doctor group, 728.5(657.25-809). The relationship between the number of portable X-rays and the radiation exposure dose was not statistically significant(-0.186, p=0.269). Conclusion: Under the condition of staying away from the portable X-ray unit at a distance of least 1.8 m, the relationship between the number of portable X-rays and the radiation exposure dose was not statistically significant.

  • PDF