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The Photovoltaic Effect of Iodine-Doped Metal Free Phthalocyanine/ZnO System (Ⅱ). The Photovoltaic Effect of $ZnO/H_2Pc(I)_x$ Dispersed in Poly(9-vinylcarbazole) (요오드가 도핑된 무금속 프탈로시아닌/산화아연계의 광기전력 효과 (Ⅱ). Poly(9-vinylcarbazole)에 분산된 $ZnO/H_2Pc(I)_x$계의 광기전력 효과)

  • Heur, Soun-Ok;Kim, Young-Soon
    • Journal of the Korean Chemical Society
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    • v.39 no.3
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    • pp.176-185
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    • 1995
  • To improve photosensisitizing efficiency of ZnO/$H_2Pc(I)_x$ system, ZnO/$H_2Pc(I)_x$ system was dispersed in a typical photoconductive polymer of poly(9-vinylcarbazole)(PVCZ). The iodine dopant level(x) of ZnO/${\chi}-H_2Pc(I)_x$ is proportional to concentration of iodine, whereas x of ZnO/${\beta}-H_2Pc(I)_x$ decreased from the highest x=0.97 at more than $6.3{\times}10^{-3}$ M iodine solution. The Raman spectra of ZnO/${\chi}-H_2Pc(I)_x$ at 514 nm exhibited characteristic $I_3^-$ patterns in the range of 50∼550 $cm^{-1}$ at $x{\geq}0.57.$ The surface photovoltage of ZnO/${\chi}-H_2Pc(I)_{0.48}$/PVCZ was approximately 1.6 times greater than ZnO/${\chi}-H_2 Pc(I)_{0.48}$ and was 1.8 times of ZnO/${\chi}-H_2Pc(I)_{0.57}$/PVCZ at 670 nm. With ZnO/$H_2Pc(I)_x$/PVCZ, the highest iodine dopant levels showed a higher photovoltage. Therefore the injection of holes from H2Pc into PVCZ resulted in that photosensisitizing effect of ZnO/$H_2Pc(I)_x$/PVCZ system was improved compared to ZnO/$H_2Pc(I)_x$ case.

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A study on the preparation of $(Ba_{1-X}Sr_X)ZrO_3$ using oxalate method and its dielectric properties (수산염법에 의한 $(Ba_{1-X}Sr_X)ZrO_3$의 합성 및 그의 유전특성에 관한 연구)

  • Oh Seong Kweon;Nam Seok Baik;Byung Ha Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.3
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    • pp.252-261
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    • 1994
  • The $(Ba_{1-X}Sr_X)ZrO_3$ powder showing chemically pure and fine particle size was attempted to be synthesized by the oxalate method. The objective of this study is to determine the optimum synthesis condition of stable $(Ba_{1-X}Sr_X)ZrO_3$ powder in terms of the temperatures coefficient of resonant frequency ${\tau}_f$ by examining the microstructure and dielectric properties of the synthesized powder. The six compounds (x=0, 0.2, 0.4, 0.6, 0.8, 1) of $(Ba_{1-X}Sr_X)ZrO_3$ were prepared by the oxalate method, and then calcined at $1000^{\circ}C$ to obtain the crystalline $(Ba_{1-X}Sr_X)ZrO_3$ powder. The synthesized powder showed the globular-shape and average particle size of less than $0.2 \mu\textrm{m}$. The composition of x=0.5, i.e., half of Ba was replaced by Sr, is experted to show the zero value of temperatures coefficient of capacitance ${\tau}_c$.

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Three Crystal Structures of Dehydrated $Ag_{12-x}Na_x-A$ (x = 4, 6, and 8) Treated with Rubidium Vapor (탈수한 $Ag_{12-x}Na_x-A$ (x = 4, 6, 및 8)를 루비듐 증기로 처리한 세가지 결정구조)

  • Lee, Hyeon Do;Kim, Un Sik;Park, Jong Yeol;Kim, Yang
    • Journal of the Korean Chemical Society
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    • v.38 no.3
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    • pp.186-196
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    • 1994
  • Three fully dehydrated partially $Ag^+$-exchanged zeolite A(Ag_4Na_8-A, Ag_6Na_6-A, and Ag_8Na_4-A) were treated at $250^{\circ}C$ with 0.1 torr Rb vapor at 4 h. Their structures were determined by singlecrystal X-ray diffraction methods in the cubic space group $Pm{\bar3}m$ (a = 12.264(4) $\AA$, a = 12.269(1) $\AA$, and a= 12.332(3) $\AA$, respectively) at $22(1)^{\circ}C$, and were refined to the final error indices, R(weighed), of 0.056 with 131 reflections, 0.068 with 108 reflections, and 0.070 with 94 reflections, respectively, for which I > $3\sigma(I).$ In these structures, Rb species are found at three different crystallographic sites; three $Rb^+$ ions per unit cell are located at 8-ring centers, ca. 6.0∼6.8 $Rb^+$ ions are found opposite 6-rings on threefold axes in the large cavity, and ca. 2.5 $Rb^+$ ions are found on three fold axes in the sodalite unit. Also, Ag species are found at two different crystallographic sites; ca. 0.6∼1.0 $Ag^+$ ion lies opposite 4-rings and about 1.8∼4.2 Ag atoms are located near the center of the large cavity. In these structures, the numbers of Ag atoms per unit cell are 1.8, 3.0, and 4.2, respectively, and these are likely to form hexasilver clusters at the centers of the large cavities. The $Rb^+$ ions, by blocking 8-rings, may have prevented silver atoms from migrating out of the structure. Each hexasilver cluster is stabilized by coordination to 6-ring, 8-ring $Rb^+$ ions, and also by coordination to a 4-ring $Ag^+$ ion.

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Diagnosis of Seed Quality for Korean White Pine by Soft X-Ray Photographs (연(軟) X-선(線) 사진(寫眞)에 의(依)한 잣나무 종자(種子)의 품질진단(品質診斷))

  • Min, Kyung Hyun
    • Journal of Korean Society of Forest Science
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    • v.23 no.1
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    • pp.1-8
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    • 1974
  • The seed quality testing for Korean white pine (Pinus koraiensis), their pre-germination and embryo growing process were investigated and the abnormal embryo groups were discriminated by the use of soft X-ray photograph. The study results were as follows ; 1. The embryo reflection was clearly observed for air dried seeds (moisture content was 6.3%) at 30 sec, stratificated seeds at 60 sec (moisture content 24.0-36.0%) and immature seed (moisture content 41.0-64.0%) at 90sec., then the photographing variation for soft X-ray was the radiographing distance at 42cm focus M, voltage 19.5 K.V.P. and Ampere 8 mA. By the above result, the radiographing time for discriminating the embryo reflection was increased by the increase of moisture content in the seeds. 2. The embryo reflection could be clearly observed from the last ten days of June and the embryo length ratio to endosperm length was growing to 65% at the first ten days of September. By the result obtained the soft X-ray photograph was thought to be effective method for the study of inner morphology of seeds. 3. The clear reflection seeds for embryo and endorsperm were observed to 69.7% and the seeds were practically germinated to 75.2% The difference in number between the discriminated seeds by the soft X-ray photograph and the practically germinated seeds was only 6%. According to this results, the soft X-ray photograph was thought to be a effective methods for the germination diagnosis in the shortest time and with the exactness comparatively. 4. Because of the possibility of clearness for observation of pre-germination process, the soft X-ray photograph could be used for the study on the physiology of seed germination. 5. The frequency of abnormal embryos was observed of total 4.4% and their types and subtypes could be classified into twenty groups. Among these groups, single abnormal embryo type was divided into eight subtypes and observed of 2.0 percent, twin embryo was six subtypes and 1.8 percent, triple embryo was five subtypes and 0.5 percent, and inverse type was 0.12 percent.

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$0.13{\mu}m$ CMOS Quadrature VCO for X-band Application ($0.13{\mu}m$ CMOS 공정을 이용한 X-band용 직교 신호 발생 전압제어 발진기)

  • Park, Myung-Chul;Jung, Seung-Hwan;Eo, Yun-Seong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.8
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    • pp.41-46
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    • 2012
  • A quadrature voltage controlled oscillator(QVCO) for X-band is presented in this paper. The QVCO has fabricated in Charted $0.13{\mu}m$ CMOS process. The QVCO consists of two cross-coupled differential VCO and two differential buffers. The QVCO is controlled by 4 bit of capacitor bank and control voltage of varactor. To have a linear quality factor of varactors, voltage biases of varactors are difference. The QVCO generates frequency tuning range from 6.591 GHz to 8.012 GHz. The phase noise is -101.04 dBc/Hz at 1MHz Offset when output frequency is 7.150 GHz. The supply voltage is 1.5 V and core current 6.5-8.5 mA.

Identification of hrcC, hrpF, and maA Genes of Xanthomonas campestris pv. glycines 8ra: Roles in Pathogenicity and Inducing Hypersensitive Response on Nonhost Plants

  • Park, Byoung-Keun;Ingyu Hwang
    • The Plant Pathology Journal
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    • v.15 no.1
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    • pp.21-27
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    • 1999
  • Nonpathogenic mutants of Xanthomonas campestris pv. glycines were generated with Omegon-Kim to isolate genes essential for pathogenicity and inducing hypersensitive response (HR). Three nonpathogenic multants and two mutants showing slow symptom development were isolated among 1,000 colonies tested. From two nonpathogenic mutants, 8-13 and 26-13, genes homologous to hrcC and hrpF of X. campestris pv. vesicatoria were identified. The nonpathogenic mutant 8-13 had a mutation in a gene homologous to hrpF of X. campestris pv. vesicatoria and failed to cause HR on pepper plants but still induced HR on tomato leaves. The nonpathogenic mutant 26-13 had an insertional mutation in a gene homologous to hrcC of X. campestris pv. vesicatoria and lost the ability to induce HR on pepper leaves but still caused HR on tomato plants. Unlike other phytopathogenic bacteria, the parent strain and these two mutants of X. campestris pv. glycines did not cause HR on tobacco plants. a cosmid clone, pBL1, that complemented the phenotypes of 8-13 was isolated. From the analysis of restriction enzyme mapping and deletion analyses of pBL1, a 9.0-kb Eco RI fragment restored the phenotypes of 8-13. pBL1 failed to complement the phenotypes of 26-13, indicating that the hrcC gene resides outside of the insert DNA of pBL1. One nonpathogenic mutant, 13-33, had a mutation in a gene homologous to a miaA gene encoding tRNA delta (2)-isopentenylpyrophosphate transferase of Escherichia coli. This indicated that tRNA modifications in X. campestris pv. glycines may be required for expression of genes necessary for pathogenicity. The mutant 13-33 multiplied as well as the parent strain did in the culture medium and in planta, indicating that loss of pathogenicity is not due to the inability of multiplication in vivo.

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The NAND Type Flash EEPROM using the Scaled SCNOSFET (Scaled SONOSFET를 이용한 NAND형 Flash EEPROM)

  • Kim, Ju-Yeon;Kim, Byeong-Cheol;Kim, Seon-Ju;Seo, Gwang-Yeol
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.1
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    • pp.1-7
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    • 2000
  • The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

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Reaction between Calcium-doped Lanthanum Chromite and Yttria Stabilized Zirconia (칼슘이 첨가된 란탄-아크롬산 염과 이트리아 안정화 지르코니아 계면간의 반응)

  • Choe, Jin-Sam
    • Korean Journal of Materials Research
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    • v.11 no.6
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    • pp.460-464
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    • 2001
  • The ceramic diffusion coupling with the green body of calcium-doped lanthanum chromite(La$_{0.8}$Ca$_{0.2}$CrO$_3$CLC- G) and sintered calcium-doped lanthanum chromite(La$_{0.8}$Ca$_{0.2}$CrO$_3$ CLC) by Pechini's method on yttria stabilized zirconia(YSZ) plate has been investigated. The X-ray diffraction pattern of CLC sides at the reacted CLC-G/ CLC and CLC/YSZ interface were identified as La$_{1-x}$ Ca$_{x}$CrO$_3$ and the unreacted YSZ side was cubic-ZrO$_2$ at the treated condition, 1300~1500 C for 10 hr in air, respectively. The order of migration components between CLC/YSZ interface was Zr>La>>Cr>>>Ca and these changes were not dependent upon the treated conditions. The grain shape and size at the interface of CLC-G/CLC was appeared to have a uniform distribution with increasing temperature. The bonding reaction of YSZ/CLC was occurred without a large amount change of the compositions in SEM photos.os.otos.os.

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