• Electrical & Electronic Materials
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• v.6 no.5
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• pp.454-460
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• 1993

본 연구에서는 준강유전 특성을 갖는 xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$- (1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$ (x=8.5, 9.0[mol.%], y=65, 70[mol.%]) 세라믹을 2단 소성법으로 제작한 후, 조성 및 인가전계에 따른 전기광학 특성 및 광변조 특성을 측정하였다. 인가전계가 증가함에 따라 8.5/65/35 시편을 제외한 전조성에서 유효복굴절이 2차 함수적으로 변화하는 2차 전기광학 특성을 나타내었으며 2차 전기광학계수, 반파장전압 및 ON-OFF ratio는 9.0/65/35 시편에서 각각 6.17x$10^{-16}$[ $m^{2}$/ $v^{2}$], 136[V], 252의 가장 우수한 값을 나타내었다. 9.0/70/30, 9.0/65/35 및 8.5/70/30 시편에 대해 광변조 특성을 측정한 결과, 입사광의 세기를 인가전압에 의해 변조시킬 수 있음을 관찰하였다.다.

• Journal of Magnetics
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• v.9 no.4
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• pp.113-115
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• 2004

The magnetization properties have been measured for amorphous $Fe_{82}Mn_{8-x}B_xZr_{10}$ (x = 0-8) alloys. The temperature dependence of magnetization for these alloys shows the existence of antiferromagnetic couplings between Fe atoms in low fields at low temperatures. The magnetic parameters, obtained from the magnetization behavior are consistent with the presence of mixed magnetic state. The Curie temperature and magnetic moment increased with an increase of the concentration of B and spin glass like transition observed at low temperature decreases and finally vanishes at x = 8 at %. Our result suggests that the substitution of B for Mn seems to cause an increase of magnetic order.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.192.2-192.2
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• 2013

Crystalline order and surface stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin films on organic surface were investigated using grazing incidence wide angle x-ray scattering and x-ray reflectivity measurements. In the initial growth regime (less than 20 nm), HATCN molecules were stacked to low crystalline order with substantial amorphous phase. Meanwhile, a thicker film with 50 nm thickness showed high crystalline order of hexagonal phase with three different orientational domains. The domain distribution was quantitatively obtained as a function of tilted angle. By an organic-inorganic interface formation of IZO/HATCN thin film from an indium zinc oxide (IZO) electrode deposition, the surface stability of HATCN film was investigated and the sharp interface was confirmed by the x-ray reflectivity measurement.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.445-451
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• 2018

We report the structural, magnetic and magnetocaloric properties of $Sr_{1.8}Pr_{0.2}FeMo_{1-x}W_xO_6$($0.0{\leq}x{\leq}0.4$) samples prepared by the conventional solid state reaction method. The X-ray diffraction analysis confirms the formation of the tetragonal double perovskite structure with a I4/mmm space group in all the synthesized samples. The temperature dependent magnetization measurements reveal that all the samples go through a ferromagnetic to paramagnetic phase transition with an increasing temperature. The Arrott plot obtained for each synthesized sample demonstrates the second order nature of the magnetic phase transition. A magnetic entropy change is obtained from the magnetic isotherms. The values of maximum magnetic entropy change and relative cooling power at an applied field of 2.5 T are found to be $0.40Jkg^{-1}K^{-1}$ and $69Jkg^{-1}$ respectively for the $Sr_{1.8}Pr_{0.2}FeMoO_6$ sample. The tunability of magnetization and excellent magnetocaloric features at low applied magnetic field make these materials attractive for use in magnetic refrigeration technology.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.636-640
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• 2001

In order to improve the optical Performance of green emitting phosphor for plasma display panel (PDP) application, the wet chemical method for preparing $Zn_{2-x}$ $SiO_4$:xMn (xi=0.02. 0.08) phosphor was designed. The spherical phosphor particles were obtained and the size can be between 0.5$\mu\textrm{m}$ and 2$\mu\textrm{m}$. The formation of phosphor, which had the willemite structure, was completed at relatively low temperature of 108$0^{\circ}C$. Also, photoluminescence Properties of the phosphors prepared were investigated under vacuum ultraviolet excitation. In particular, the emission intensity of Zn$_2$SiO$_4$:0.08Mn phosphor having the 1$\mu\textrm{m}$ of particle size was higher than that of commercial phosphor by 40%. The decay time of zinc silicate powder prepared as containing 8 mole% of manganese has been measured as 7.8ms.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.363-363
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• 2001

In order to improve the optical Performance of green emitting phosphor for plasma display panel (PDP) application, the wet chemical method for preparing $Zn_{2-x}$ $SiO_4$:xMn (xi=0.02. 0.08) phosphor was designed. The spherical phosphor particles were obtained and the size can be between 0.5$\mu\textrm{m}$ and 2$\mu\textrm{m}$. The formation of phosphor, which had the willemite structure, was completed at relatively low temperature of 108$0^{\circ}C$. Also, photoluminescence Properties of the phosphors prepared were investigated under vacuum ultraviolet excitation. In particular, the emission intensity of Zn$_2$SiO$_4$:0.08Mn phosphor having the 1$\mu\textrm{m}$ of particle size was higher than that of commercial phosphor by 40%. The decay time of zinc silicate powder prepared as containing 8 mole% of manganese has been measured as 7.8ms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• Microbiology and Biotechnology Letters
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• v.29 no.4
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• pp.221-226
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• 2001

Streptomyces themocyaneovio-laceus producing the thermostable xylanase was used for the production of xylooligosaccharides from xylan. The optimal conditions for the xylanase production were investigated in jar fermentor, which operated at 2 vvm aera-tion and 400 rpm agitation speed at $50^{\circ}C$ for 24 h. The optimal reaction condtion for the production of xylooli-gosaccharides with xylanases which were prepared by the percipitation with ammonium sulfate were obtained by the reaction at $60^{\circ}C$ for 12 h in the mixture composed of 10% birchwood xylan in 50 mM sodium phosphate buffer (pH 6.0)and 10 unit/ml of xylanase. In this optimal condition for the xylooligosaccharides production the mixture of xylooligosaccharides (58.8 g/I) which were composed of 20.1 g/I of xyobiose, 8.9 g/I of xylotriose 4.5 g/I of xylotetraose 16.2g/I of xylopentaose and 9.1 g/I xylohexaose and 5.0 g/I of xylose was produced from 100 g/I of birchwood xylan by the xylanases of S thermocyaneoviolaceus .

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.21-26
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• 2024

In this investigation, samples of the chemical (Hg_1-xPb_xBa₂Ca_1.8Mg_0.2Cu₃O_8+δ) were prepared utilizing a solid-state reaction technique with a range of lead concentrations (x = 0.0, 0.05, 0.10, and 0.20). Specimens were pressed at 8 tons per square centimeter and then prepared at 1,138 K in the furnace. The crystalline structure and surface topography of all samples were examined using X-ray diffraction (XRD) and atomic force microscopy (AFM). X-ray diffraction results showed that all of the prepared samples had a tetragonal crystal structure. Also, the results showed that when lead was partially replaced with mercury, an increase in the lead value impacted the phase ratio, and lattice parameter values. The AFM results likewise showed excellent crystalline consistency and remarkable homogeneity during processing. The electrical resistivity was calculated as a function of temperature, and the results showed that all samples had a contagious behavior, as the resistivity decreased with decreasing temperature. The critical temperature was calculated and found to change, from 102, 96, 107, and 119 K, when increasing the lead values in the samples from 0.0 to 0.05, 0.10, and 0.20, respectively.

• Journal of Veterinary Clinics
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• v.18 no.2
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• pp.146-151
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• 2001

This study was carried out to find if the X-irradiation being used for clinical diagnosis during pregnancy would affect fetal development and cause fetal malformation in rats or not. To determine the dose and irradiation frequency of X-irradiation and gestation period by which fetal development would be affected when irradiated during pregnancy, seventy-two Sprague Dawley female rats (8 weeks old) were used for the experiment and grouped into three according to different gestation period of 5-8 days, and 6-12 days of gestation. Experimental rats were irradiated on the daily irradiation conditions of 40, 60, 80 kvp(kilo volt peak), 150 mA(milliampere), 0.25 sec and 4 times/day for both 5-8 days and 10-13 days of gestation, and 100 kvp, 100 mA, 2 min. and 4 times/day for 6-12 days of gestation. Rats were put in a small dark box when irradiated, which animals were sacrificed on the 20th day of gestation and mean litter size, fetal body weight, fetal crown-rump length(CRL) were investigated along with pathological findings. 1. Litter size were significantly decreased in the rats which were irradiated by both 60 and 80 kvp during 5 to 8 days of gestation and by 100 kvp during 6-12 days of gestation compared to those from the control rats(p<0.05) 2. Fetal body weight was significantly decreased in the fetus from the rats which were irradiated by both 60-80 kvp during 5-8 days of gestation and by 100 kvp during 6-12 days of gestation compared to those from the control rats(p<0.05). 3. There was no significant difference of fetal crown-rump length between all the experimental rats and the controls. 4. Fetal absorption, fetal death, and fetal malformation were not observed in the fetus form the rats irradiated by 40-80 kvp during 5-8 and 10-13 days of gestation, however, the pathological findings were found in those from the rats irradiated by 100 kvp during 6-12 days of gestation. 5. The harmful effect of x-irradiation on fetal development was estimated to occur when irradiated during 5-8 days of gestation. These results indicated that even X-irradiation for clinical diagnosis could affect fetal development in the early embryonic stage and when the fetus were exposed to frequent and prolonged x-irradiation with over dose.