• Korean Journal of Crystallography
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• v.6 no.2
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• pp.88-92
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• 1995

Higly pure silicon crystals with an almost perfect lattice structure constityte a powerful metrological tool. The streographic standard prohection for the (111) orientation of diamond structure found by the Laue method shows angles between net planes of 60°. This value is known to be certain to some 10-8 rad. We have made a six-faced silicon polygon, and the (220) lattice planes of the polygon act as a reference angular standard. The information of angles between lattice planes could be taken by the X-ray diffraction. The angle of the rotary encoder have been calibrated using the silicon angle standard. The X-ray optics was double crystal arrangement.

• Journal of Magnetics
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• v.10 no.4
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• pp.137-141
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• 2005

We confirmed that the improvement in properties of magnetic tunnel junctions prepared by radical oxidation after thermal treatment was mostly resulted from the redistribution of oxygen at the $AIOx/Co_{90}Fe_{10}$ interface. The as-deposited Al oxide barrier was oxygen-deficient but most of it re-oxidized into $Al_2O_3$, the thermodynamically stable stoichiometric phase, through thermal treatment. As a result, the effective barrier height was increased from 1.52 eV to 2.27 eV. On the other hand, the effective barrier width was decreased from 8.2 ${\AA}$ to 7.5 ${\AA}$. X-ray absorption spectra of Fe and Co clearly showed that the oxygen in the CoFe layer diffused back into the Al barrier and thereby enriched the barrier to close to a stoichiometirc $Al_2O_3$ phase. The oxygen bonded with Co and Fe diffused back by 6.8 ${\AA}$ and 4.5 ${\AA}$ after thermal treatment, respectively. Our results confirm that controlling the chemical structures of the interface is important to improve the properties of magnetic tunnel junctions.

• Korean Journal of Medicinal Crop Science
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• v.16 no.3
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• pp.195-198
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• 2008

Karyotypic analysis and FISH (fluorescence in situ hybridization) with 45S and 5S rRNA genes were carried out in Persicaria tinctoria H Gross. The somatic metaphase chromosomes were ranged from 2.25 ${\mu}m$ to 1.50 ${\mu}m$ in length. Chromosome number was 2n = 4x = 40 with the basic number of x = 10. The chromosome complement of the species consisted of 16 pairs of metacentrics (chromososomes 1,2,3,4,6,7,8,9, 10, 11, 12, 13, 15, 18, 19 and 20) and 4 pairs of submetacentrics (chromosome 5, 14, 16 and 17). The karyotype formula was K(2n) = 4x = 32 m + 8 sm. In FISH analysis, three pairs of 45S rRNA gene loci on the terminal region of submetacentrics (chromosomes 5, 16 and 17) and two pairs of 5S rRNA gene loci on the centromeric region of metacentrics (chromosomes 9 and 11) were detected, respectively.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.325-330
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• 2009

High pressure x-ray diffraction study was performed on a synthetic FeOOH-goethite to check out its compressibility at room temperature. Angular dispersive x-ray diffraction method was employed using a symmetrical diamond anvil cell with synchrotron radiation. Bulk modulus was determined to be 222.8 GPa under assumption of $K_{T'}$ of 4.0. This value is too high comparing with the previously published values from natural samples. It has been discussed the possible causes to incur its high bulk modulus value according to the production conditions.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.674-681
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• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.632-635
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• 2011

Additions (ZnO, CuO) doped $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$ (0.98NKN-0.02LST-x) lead free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of additions doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction of the sample appeared orthorhombic phase. The specimen doped with additions exhibits enhanced electrical properties ($d_{33}$= 153 pC/N). These results indicate that the 0.98NKN-0.02LST-x ceramics is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.71-76
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• 2011

To characterize the relationship between the stage of hepatic fibrosis and bioimpedance, several electric parameters were estimated in rats with $CCl_4$-induced liver fibrosis. Thirty three Sprague-Dawley rats were intraperitoneally injected with a $CCl_4$-mineral oil mixture (1:1, 0.2 mL/100 g) twice a week for 8 weeks. The resistance(R), reactance(X), impedance(Z), and dissipation factor(D) between 1 kHz and 100 kHz were then evaluated in the livers of the rats under pentobarbital anesthesia using an HP4294A Impedance Analyzer. The rats were killed 2, 4, 6, and 8 weeks later, and their livers were classified in accordance with Ishak's scoring system. R, X, and Z changed in accordance with the progression of hepatic fibrosis and the changes were greater at lower frequencies than at higher frequencies. In comparison, the D spectrum was biphasic; D increased initially then decreased with increasing frequency. All of the parameters(R, X, Z, and D) changed in accordance with the stage of fibrosis in the livers, but D changed specifically with the progression of fibrosis. These results indicate that hepatic fibrosis may be evaluated by determining the changes in D.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.183-189
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• 2013

The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of $Ge_{19}Sb_{23}Se_{58}$. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.652-659
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• 1996

Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.154-154
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• 2010

표면 passivation 효과향상 기술은 고효율의 결정질 실리콘 태양 전지를 제작하는데 필수적 요소이다. passivation을 통해서 전자와 전공의 재결합 속도를 낮출 수 있어 $V_{oc}$가 상승하고, 전류 값 증가를 통하여 효율 향상의 결과를 얻을 수 있기 때문이다. passivation을 위해서 다양한 각도로 접근하였다. 첫째는 $SiN_x$를 이용한 passivation효과 실험 둘째는 plasma 분위기에서 $N_2O$를 이용한 passivation효과 실험 그리고 마지막으로 RTO를 이용한 passivation 효과를 실험하였다. 첫 번째 실험은 PECVD를 이용하여 $SiN_x$를 증착한 후 굴절률 1.9 2.66으로 가변 한 결과 $SiN_x$ n=2.66에서 $D_{it}=8.82{\times}10^9$ [$cm^{-2}eV^{-1}$]로 우수한 passivation 효과를 얻을 수 있었다. 두 번째 실험에서는 PECVD를 이용해서 $N_2O$ treatment 후 SiON 증착한 샘플을 이용하여 시간 가변에 따른 passivation 효과를 확인하였다. 그 결과 $N_2O$ 50sccm, 100mTorr, 20W, $400^{\circ}C$ 8min 조건에서 가장 우수한 passivation 효과를 관찰할 수 있었다. 마지막 실험은 RTP를 이용하여 $SiO_2$ 박막에 대한 온도, 시간에 따른 passivation효과를 확인하였다. 그 결과 $O_2$ 3L/min $800^{\circ}C$ 2~3nm 3min 공정에서 lifetime이 220us(n형)의 결과를 얻을 수 있었다. 상기 세 실험결과를 태양전지제작에 응용한다면 고효율의 태양전지 제작이 가능할 것으로 사료된다.