• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.693-697
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• 2001

고상반응법으로 이론 밀도의 약 92%의 소결 밀도를 갖는 입방정계의 새로운 이온전도체 L $a_{2-x}$S $r_{x}$M $o_{2-y}$C $r_{y}$ $O_{9-{\delta}}$(x=0, 0.05, y=0, 0.1)를 제조하였다. 교류 복소임피던스는 3$50^{\circ}C$~90$0^{\circ}C$의 온도범위에서 공기중에서 측정하여, EQUIVCRT 모델링 소프트웨어로 해석하였다. 상 전이온도인 58$0^{\circ}C$ 전.후로 임피던스 스펙트럼에 큰 차이가 있었으며, 전기전도도는 L $a_2$M $o_2$ $O_{9}$ 시편의 경우 7$50^{\circ}C$에서 3$\times$$10^{-2}$ S$cm^{-1}$ /로 우수하였으며, 활성화 에너지는 고온 상 영역에서는 0.89 eV, 저온 상 영역에서는 1.12 eV이었다. 순수한 L $a_2$M $o_2$ $O_{9}$과 비교하여 Cr 치환효과는 크지 않았으나, Sr 치환 시에는 상 전이온도의 감소와 전기전도도의 증가 현상을 보였으며, 전이온도 부근에서의 전기전도도 변화 폭은 작았다.다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.581-586
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• 1998

We investigated the effect of mechanical back side damage in Czochralski grown silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductivity decay method, degree of X-ray diffuse scattering, X-ray section topography, and wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the magnitude of diffuse scattering and X-ray excess intensity increased proportionally, and it was at Grade 1:Grade 2:Grade 3=1:7:18.4 that the normalized relative quantization ratio of excess intensity in damaged wafer was calculated, which are normalized to the excess intensity from sample Grade 1.

• Journal of the Korean Society for Railway
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• v.8 no.4
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• pp.342-347
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• 2005

The Korean High-Speed Train(HSR 350x) had been developed by through 'G7-R&D project' in 1996-2002, and has been testing and evaluating it's reliability on the high-speed line until now. A number of core equipments designed and developed by using domestic technologies were boarded on the HSR 350x. In order to verify the performance of HSR 350x and core equipments such as traction system, brake system and pantograph, sophisticated testing and evaluating procedures should be considered and applied. In this paper, the tested and analysed results about the dynamic characteristics of HSR 350x pantograph are introduced in a view point of the mean contact force and it's variation trend, criterion of current collection, and up-lifting of contact wire when the MSR 350x running up to 350 km/h. Through the test and evaluation, we verified that HSR 350x pantograph had an excellent current collection performance and good dynamic characteristics as it had been designed.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.47-50
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• 1999

The orientation mechanism of an amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ phase were studied by using the dilatometry. The amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ samples brought about a volume shrinkage at the onset of the crystallization of a $Bi_{2}$$Sr_{2}$$CaCu_{2}$$O_{6}$phase around $400^{\circ}C$. The random crystal growth of $Bi_{2}$$Sr_{2}$$CaCu_{2}$$O_{8}$ phase around $800^{\circ}C$. yielded a rapid volume expansion and after then samples shrinmed, accompanied with the crystal orientation. The$Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ (x=0.4) sample exhibited the best-oriented structure because the liquid phase formed seemed to have the lowest viscosity which would contributed to the easy collapse of the card-house structure.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.22-31
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• 1997

We have measured the optical properties, thickness, and energy band gap of the P $b_{1-x}$/100/L $a_{x}$100/ $Ti_{1-}$0.25x/100/ $O_{3}$ (PLT(x)) thin film prepared by the sol-gel method with varying the La concentration, x, fyom 15 nto 33 mol%. We have obtained the values from the tranmission spectrum and employed the envelope method in anayzing the spectrum. We have also performed the simulation of the transmission spectrum on the PC (personal computer) to verify the accuracy of the values 15 to 33mol%, the refractive index (at .lambda.=632.8nm) increases from 2.39 to 2.44. The extinction coefficient does not depend on the la concentration but mainly on te wavelength, and has the values between 0.2 and 0.5 at the wavelength shorter than 330nm and between 0.001 and 0.008 at the wavelength longer than 700nm. The energy band gap of the PLT (x) thin film has been obtained on the assumption of the direct band-to-band transition. It decreases from 3.28 to 3.17eV as the La concentration increases from 15 to 33 mol%. The thickness of the PLT(x) thin film has been also obtained in high accuracy by the envelope method..

• Journal of Hydrogen and New Energy
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• v.5 no.1
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• pp.1-8
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• 1994

Lattice structure, hydrogen absorption characteristics, discharge capacity and cycle life of $V_{22}Ti_{16}Zr_{16}Ni_{39}X_7$(X= Cr, Co, Fe, Mn, Al) alloys were investigated. The matrix phases of these alloys were the C14 Laves phase. Chromium-containing alloy had a vanadium-rich phase in addition to the Laves phase. The chromium, maganese, or aluminum-containing alloys had lower hydrogen equilibrium pressure and larger hydrogen absorption content than the cobalt or iron-containing alloys. The discharge capacities of these alloys were 270~330mAh/g. The discharge capacity according to the alloying element X decreased in the order of Mn>Cr>Co, Al)Fe. The charge/discharge cycle lives of the chromium, cobalt or iron-containing alloys were longer than those of maganese or aluminum-containing alloys due to the lower vanadium dissolution rate.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.443-450
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• 1998

Layered double hydroxides(LDHs) [{{{{ {Mg }_{1-x } }}{{{{ {Al }_{x } }}({{{{ {OH}_{2 } }})]ζ+({{{{ {CO }`_{3 } ^{2- } ){ }_{x/2 } }}$.${{{{ { yH}_{2 }O }} wioth variation of layer charge densitywere synthesized by co-precipitation methdo since their charge densities have a very important role to be det-ermined the physicochemical properties of layered materials. The XRD IR and thermal studies of them were discussed and the kinetic study for the decarbonation reaction was also carried out. From the results of XRD analysis we found that the lattice parameter and the unit cell volume were linearly decreased with the amount of Al substituents(x) in the vicinity of x=2∼10${\times}$1/3${\times}$10-1 but they had nearly constant values when the x are far from these vicinit. The activation energies for the decarbonation reaction of x=6.8, 10${\times}$1/3${\times}${{{{ { 10}^{-1 } }} were estimated to be 47.0, 37.6, 39.3 kcal/mol The specific surface areas(90-120 m2/g) of stable hy-drotalcite-type LDHs were dractically decreased with increasing of layer charge density.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.565-570
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• 2011

The $Eu^{3+}$ doped $Y(P_x,V_{1-x})O_4$ (0 ${\leq}$ x ${\leq}$ 1) phosphors were synthesized by solid-state and impregnation method and investigated as potential red-emitting phosphors for a plasma display panel(PDP). The optimal substitution proportion of P for V was determined to be 60 mol%, for $Y(P_x,V_{1-x})O_4$ doped with 8 mol% $Eu^{3+}$. The VUV PL spectra and SEM for the synthesized phosphors were measured and compared against those of a commercial red-emission phosphor. The $Y(P_x,V_{1-x})O_4$:$Eu^{3+}$ phosphors exhibited strong red at around 592, 618 and 698 nm. The emission intensity and particle size of the phosphors were controlled by preparation conditions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.1
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• pp.30-39
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• 1991

The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs solar cell is investigated. The maximum efficiency theoretically calculated in this device is obtained when a thickness of the window is in a range of (400-1000))$\AA$and a thickness/doping concentration of the emitter is in a range of (0.5-0.8)$\mu$m/(1-7)${\times}10^{17}cm^{-3}$, respectively. Also is the efficiency improved according to the increase of Al mole fraction in the indirect gap window(0.41${\le}x{\le}1.0$). The optimum designed heteroface cell with an area of 0.165cm$^2$fabricated using MOCVD exhibits an active area conversion efficiency of 17%, having a short circuit current density of 21.2mA/cm\ulcorner an open circuit voltage of 0.94V, and a fill factor of 0.75 under ELH-100mW/cm$^2$illumination.