• 제목/요약/키워드: X-ray laser

검색결과 481건 처리시간 0.032초

Nd:YAG 레이저에 의한 폴리테트라플루오르에틸렌 박막 증착 (Deposition of Polytetrafluoroethylene Thin Films by IR-pulsed Laser Ablation)

  • 박훈;서유석;홍진수;채희백
    • 한국산학기술학회논문지
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    • 제6권1호
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    • pp.58-63
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    • 2005
  • 레이저 용발법을 이용하여 폴리테트라플루오르에틸렌(PTFE: polytetrafluoroethylene) 박막을 증착하였다 사용한 레이저는 1064 nm Nd:YAG 레이저이고, 타겟은 그라파이트 분말이 도핑된 PTFE 펠릿(pellet) 이었다. 그라파이트는 포톤에너지를 효과적으로 흡수하여 열에너지로 전환시키고, 이 에너지를 인접한 PTFE에 전달한다. PTFE는 전달받은 열에너지에 의해서 열분해 된다. 타겟 표면에서 열분해에 의해 형성된 PTFE 단량체(monomer)들은 기판위에서 재중합반응(repolymerization)하여 필름을 형성하게 된다. 증착된 필름은 투명하고 결정화된 필름이었다. 주사전자현미경(SEM: scanning electron microscopy)과 원자현미경(AFM: atomic force microscopy)으로 분석한 결과, 필름의 표면은 박막의 두께가 증가할수록 섬유구조(fibrous structure)를 보였다. X선 광전자 분광기(XPS: X-ray photoelectron spectroscopy), 퓨리에 변화 적외선 분광기(FTIR: fouirer transform infrared spectroscopy)와 X선 회절분광기(XRD: X-ray diffraction)로 분석한 결과, 필름의 F/C 비는 1.7이고 분자축(molecular axis)은 기판과 나란했다.

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자동차용 무침입형 극저탄소강의 파이버 레이저 용접에 대한 연구 (A Study on the Fiber Laser welding of Ultra-Low Carbon Interstitial Free Steel for Automotive)

  • 오용석;신호준;양윤석;황찬연;유영태
    • 한국생산제조학회지
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    • 제20권3호
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    • pp.342-349
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    • 2011
  • The purpose of this paper is to describe experimental results about the butt welding and bead on plate welding of the high power Continuous Wave (CW) Fiber laser for Ultra-low carbon Interstitial Free(IF) steel plate for gear part of car. After being welded of the gear parts by the fiber laser and electron beam Microstructures of melting zone had been mixed acicular, granular bainitic, quasi-polygonal and widmanstatten ferrite because of a radical thermal diffusion after welding, difference of critical volume and grain size. As a result of experiment, when gear parts were welded by the fiber laser and electron beam, the fiber laser welding has been stable properties without internal defects more than the electron beam welding. Therefore it has the very advantages of welding high quality and productivity more than conventional melting method. The optimal welding processing parameters for gear parts were as follows : the laser power and welding speed were 3kWatt, 30mm/sec respectively. At this time heat input was $21.2{\times}10^3J/cm^2$.

기계적 후면 손상이 레이저/극초단파 광전도 기법에 의한 소수 반송자 재결합 수명 측정에 미치는 영향 (Effect of mechanical backside damage upon minority carrier recombination lifetime measurement by laser/microwave photoconductance technique)

  • 조상희;최치영;조기현
    • 한국결정성장학회지
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    • 제5권4호
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    • pp.408-413
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    • 1995
  • 초크랄스키 실리콘 기판의 뒷면에 형성된 기계적 손상이 레이저 여기/극초단파 반사 광전도 감쇠법에 의한 소수반송자 재결합 수명 측정에 미치는 영향을 고찰하였다. 기계적손상의 정도는 X-선 이중결정 회절법과 X-선 단면 측정법 및 습식산화/선택적 식각 방법으로 평가하였다. 그 결과, 웨이퍼 뒷면에 가해지는 기계적 손상의 세기가 강할수록 소수반송자 재결합 수명은 짧아지고, 소수반송자 재결합 수명 측정에 영향을 미치는 반치전폭의 임계값은 약13초임을 알 수 있다.

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레이저를 이용한 필름 스캐너의 개발 (Development of Film Scanner using Laser)

  • 지영준;박광석
    • 대한의용생체공학회:학술대회논문집
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    • 대한의용생체공학회 1994년도 추계학술대회
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    • pp.101-103
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    • 1994
  • The film scanner that digitizes the conventional x-ray films is the necessary equipment in the transition period of going to the filmless hospital. We have developed the film scanner using laser. We have selected HeNe laser as light source. The polygonal mirror converts the point light source to line scanning light. In sensing part, the diffusing cylinder and 7 photo transistors converts the light signal which passing the film into the electric signal. With this scanner, we can scan successfully the conventional x-ray film by $1024\times1024$. Smaller the spot sire is, higher the resolution can be achieved.

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결정질 질화탄소 박막의 합성과 그 특성 해석 (Preparation and Characterization of Crystalline Carbon Nitride)

  • 김종일;배선기
    • 한국전기전자재료학회논문지
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    • 제14권10호
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    • pp.835-844
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    • 2001
  • In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

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PLD로 증착된 YBCO 박막의 두께에 따른 배향성과 전기적 특성 변화 (Thickness Effect on the Structural and Electrical Properties of YBCO Thin Films Grown by Pulsed Laser Deposition)

  • 허창회;한경보;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.617-619
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    • 2001
  • The effect of the superconducting film thickness on the substrate temperature has been investigated. Superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition. The dependence of the orientation of YBCO film on thickness has been investigated by X-ray diffraction technique. X-ray diffraction indicated that the film orientation was changed by increasing the film thickness and by changing the substrate temperature.

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Thin Film Deposition of Tb3Al5O12:Ce by Pulsed Laser Ablation and Effects of Low-temperature Post-annealing

  • Kim, Kang Min;Chung, Jun Ho;Ryu, Jeong Ho
    • Journal of the Optical Society of Korea
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    • 제16권1호
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    • pp.76-79
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    • 2012
  • $Tb_3Al_5O_{12}:Ce$ (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above $700^{\circ}C$ was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the 4f ground level to the $5d^1$ excited levels of Ce ion.

펄스 레이저 애블레이션이 결합된 고전압 방전 플라즈마 장치를 이용한 유전성 질화탄소 박막의 합성 (Formation of dielectric carbon nitride thin films using a pulsed laser ablation combined with high voltage discharge plasma)

  • 김종일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.208-211
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    • 2003
  • The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

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