• Title/Summary/Keyword: X-ray film

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A comparative study of bite force associated with remaining bone level in anterior and premolar teeth at periodontal maintenance phase (유지관리기 치주환자의 전치 및 소구치에서 잔존 치조골량에 따른 교합력의 비교 연구)

  • Song, Gyu-Won;Yim, Sung-Bin;Chung, Chin-Hyung
    • Journal of Periodontal and Implant Science
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    • v.32 no.3
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    • pp.643-653
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    • 2002
  • Periodontal supporting tissue goes through destruction by chronic inflammatory periodontal disease as two aspect. One is qualitive aspect such as alteration of periodontium, the other is quantitative aspect such as alveolar bone loss. According to many authors, PDL is responsible for biting force, and there are two mean. for measuring PDL's function - mobility test and biting force test. This study was conducted to compare the biting force with remaining bone level, that is, quantitative aspect of periodontium, in anterior and premolar teeth at periodontal maintenance phase. 17 patients on periodontal maintenance phase during 6 months at minimum were selected for this study. For the same condition, 4 anterior, canine, premolar teeth were tested by MPM-3000 bite-force register at the same time(a.m.l0-12), the same position, the same posture, by the same examiner. Patients of TMI), ill-fitting pros thesis, general disease, malocclusion and the teeth of TFO, absence of opposing teeth, malposition were excluded. Remaining bone level was measured on the panorama X-ray film through 5 level from 1mm below CEJ to root apex. Teeth were examined twice, and bigger one was selected. If the values showed large difference. examinatin was re-done and the mean was selected. The results were as follows ; 1. In the 4 anterior group, as the remaining bone is decreased, the average of maximal biting force is decreased. Especially, at 3/5 bone level, maximal biting force is decreased significantly(p<0.01). 2. In the canine group, as the remaining bone is decreased, the average of maximal biting force is decreased. Especially, at 2/5 bone level, maximal biting force is decreased significantly(p<0.01). 3. In the premolar group, as the remaining bone is decreased, the average of maximal biting force is decreased. Especially, at 3/5 bone level, maximal biting force is decreased significantly(p<0.05). From the results of this study, clinicians could utilize these efficiently when they have to determine the proper restorative materials, time for tooth extraction, treatment plan, prognosis.

The Effects of Metal Plate loaded on TLD chip in 6 MV Photon and 6 MeV Electron Beams (6 MV 광자선과 6 MeV 전자선 하에서 TLD 기판 위에 얹힌 금속 박막의 효과)

  • Kim, Sookil;Byungnim Min
    • Progress in Medical Physics
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    • v.10 no.1
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    • pp.41-46
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    • 1999
  • There is necessity for making a smaller and more sensitive detector in small field sizes. This report assesses the suitability of metal-loaded thermoluminescent dosimeters for this purpose. Measurements were performed in the 6 MV photon and 6 MeV electron beams of a medical linear accelerator with LiF thermoluminescence dosimeters (TLD-100) embedded in solid water phantom. TLD-100 chips(surface area 3.2 $\times$ 3.2 $\textrm{mm}^2$) loaded with a metal plate(Tin or gold respectively) were used to enhance dose readings to TLD-100. Surface dose was measured for field size 10 $\times$ 10 $\textrm{cm}^2$ and 100 em SSD. Measurements have been made of the enhanced signal intensity and good linearity for absorbed dose with each metal. Using a 1 mm each metal on TLD-l00 in the beam increased the surface dose to 14% and 56% respectively for 6MV photon. In the case of 6 MeV electron, gold plate enhanced the TL response to 13%, but there is no difference for tin plate. The specific dose response of TLD-100 with thin metal plate increases with electron concentration of metal film, this is most likely due to increased electron scattered from the additional material with electron density higher than TLD-100. This emphasizes the role of TL dosimeters with metal as amplified dosimeters for therapeutic high energy x-ray beams. Due to the enhanced dose reading of TLD-100 with metal plate, it could be possible to develop smaller TL dosimeter with high sensitivity.

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Ellipsometric study of Mn-doped $Bi_4Ti_3O_{12}$ thin films

  • Yoon, Jae-Jin;Ghong, Tae-Ho;Jung, Yong-Woo;Kim, Young-Dong;Seong, Tae-Geun;Kang, Lee-Seung;Nahm, Sahn
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.173-173
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    • 2010
  • $Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

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The electrical properties of PLZT thin films on ITO coated glass with various post-annealing temperature (ITO 기판에 제작된 PLZT 박막의 후열처리 온도에 따른 전기적 특성평가)

  • Cha, Won-Hyo;Youn, Ji-Eon;Hwang, Dong-Hyun;Lee, Chul-Su;Lee, In-Seok;Sona, Young-Guk
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.28-33
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    • 2008
  • Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

Structural and Electrical Properties of Fluorine-doped Zinc Tin Oxide Thin Films Prepared by Radio-Frequency Magnetron Sputtering

  • Pandey, Rina;Cho, Se Hee;Hwang, Do Kyung;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.335-335
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    • 2014
  • Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

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Dosimetric Characteristics of Dynamic Wedge Technique (Dynamic Wedge의 조직내 방사선량 분포의 특성)

  • Oh Young Taek;Keum Ki Chang;Chu Seong Sil;Kim Gwi Eon
    • Radiation Oncology Journal
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    • v.14 no.4
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    • pp.323-332
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    • 1996
  • Purpose : The wedge filter is the most commonly used beam modifying device during radiation therapy Recently dynamic wedge technique is available through the computer controlled asymmetric collimator, independent jaw. But dosimetric characteristics of dynamic wedge technique is not well known. Therefore we evaluate dosimetric characteristics of dynamic wedge compared to conventional fixed wedge. Materials and Methods : We evaluated dosimetric characteristics of dynamic wedge and fixed wedge by ion chamber, film dosimetry and TLD in phantoms such as water, polystyrene and average breast phantom. Six MV x-ray was used in $15{\times}15cm$ field with 15,30 and 45 degree wedge of dynamic/liked wedge system, Dosimeric characteristics are interpreted by Wellhofer Dosimetrie system WP700/WP700i and contralateral breast dose (CBD) with tangential technique was confirmed by TLD. Results : 1) Percent depth dose through the dynamic wedge technique in tissue equivalent phantom was similar to open field irradiation and there was no beam hardening effect compared to fixed wedge technique. 2) Isodose line composing wedge angle of dynamic wedge is more straight than hard wedge. And dynamic wedge technique was able to make any wedge angle on any depth and field size. 3) The contralateral breast dose in primary breast irradiation was reduced by dynamic wedge technique compared to fixed wedge. When the dynamic wedge technique was applied, the scatter dose was similar to that of open field irradiation. Conclusion : The dynamic wedge technique was superior to fixed wedge technique in dosimetric characteristics and may be more useful in the future.

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Exchange Biasing and Magnetoresistance in $\alpha-Fe_2O_3 /NiFe/Cu/NiFe$Spin-valves ($\alpha-Fe_2O_3 /NiFe/Cu/NiFe$ 스핀밸브 박막에서의 자기저항 특성에 대한 연구)

  • 김종기;주호완;이기암;황도근;이상석
    • Journal of the Korean Magnetics Society
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    • v.10 no.1
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    • pp.37-41
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    • 2000
  • We investigated the magnetoresistance effect and the exchange coupling of antiferromagnetic Fe$_2$O$_3$ spin-valve film. The X-ray diffractions of the spin-valve films having a different thickness of a $\alpha$-Fe$_2$O$_3$ were measured. The exchange coupling field (H$_{ex}$) between Fe$_2$O$_3$ and pinned NiFe layer was increased from 13.5 Oe to 84.5 Oe, as the thickness of Fe$_2$O$_3$ increased from 400 $\AA$ to 800 $\AA$. The surface roughness of $\alpha$-Fe$_2$O$_3$spin-valves increased with the increase of $\alpha$-Fe$_2$O$_3$thickness. Therefore, the increase of H$_{ex}$ will be due to the increase of the interface roughness. The MR ratios as a function of Fe$_2$O$_3$ thickness was not changed. And H$_{ex}$ increased by the increment of magnetostatic coupling between Fe$_2$O$_3$ and NiFe (pinned-layer) due to the increment of interface roughness. H$_{ex}$ depends on the surface roughness, but the magnetoresistance ratio doesn't doesn't.

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The study on corrosion of the inner area of closed box-girder for unpainted weathering steel bridges (무도장 내후성 강 교량의 밀폐형 박스거더 내부의 부식에 대한 고찰)

  • Ma, Seung-Hwan;Noh, Young-Tai;Jang, Gun-Ik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.4
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    • pp.2391-2400
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    • 2015
  • Weather proof steels are used for steel bridges due to its high corrosion resistance under atmospheric conditions. However, instead of forming stabilized rust layers, general rust occurs on weather proof steels under high humidity condition close to seawater or shady places. In Japan, therefore, they perform rust stabilization treatment instead of unpainted treatment due to severe atmospheric conditions. However, most of domestic weather proof steels were constructed unpainted in the form of closed box-girder, which makes the periodical repetition of dry and wet hard to occur. For the steel bridges constructed on the Han river, the evaporation of water, dew condensation due to temperature change, and stagnant water due to rain affect harmfully on the formation of passive film on weather proof steels. Thus, in this research, in order to analyze corrosion properties inside the closed box-girder for the unpainted weather proof steel bridge in the waterworks safety zone, multiple ways of analysis such as observation with eyes, cellophane-tape test, steel thickness measurement, surface corrosion potential measurement, electron microscope analysis, and X-ray diffraction analysis of the rust were performed. As a result, unstable rust layer was observed inside the closed box-girder, and severe corrosion was observed on the top and bottom of the flanges due to the effects of stagnant water caused by rain, dew condensation, and de-icing materials.

Effect of Si Content on the Phase Formation Behavior and Surface Properties of the Cr-Si-Al-N Coatings (Cr-Si-Al-N 코팅의 상형성 및 표면 물성에 미치는 Si 함량의 영향)

  • Choi, Seon-A;Kim, Hyung-Sun;Kim, Seong-Won;Lee, Sungmin;Kim, Hyung-Tae;Oh, Yoon-Suk
    • Journal of Surface Science and Engineering
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    • v.49 no.6
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    • pp.580-586
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    • 2016
  • Cr-Si-Al-N coating with different Si content were deposited by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The deposition temperature was $300^{\circ}C$, and the gas ratio of $Ar/N_2$ were 9:1. The CrSi alloy and aluminum targets used for arc ion plating and sputtering process, respectively. Si content of the CrSi alloy targets were varied with 1 at%, 5 at%, and 10 at%. The phase analysis, composition and microstructural analysis performed using x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) including energy dispersive spectroscopy (EDS), respectively. All of the coatings grown with textured CrN phase (200) plane. The thickness of the Cr-Si-Al-N films were measured about $2{\mu}m$. The friction coefficient and removal rate of films were measured by a ball-on-disk test under 20N load. The friction coefficient of all samples were 0.6 ~ 0.8. Among all of the samples, the removal rate of CrSiAlN (10 at% Si) film shows the lowest values, $4.827{\times}10^{-12}mm^3/Nm$. As increasing of Si contents of the CrSiAlN coatings, the hardness and elastic modulus of CrSiAlN coatings were increased. The morphology and composition of wear track of the films was examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy, respectively. The surface energy of the films were obtained by measuring of contact angle of water drop. Among all of the samples, the CrSiAlN (10 at% Si) films shows the highest value of the surface energy, 41 N/m.

Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling (저가의 cryogenic milling 비진공법을 이용한 나노입자 CuInSe2 광흡수층 제조)

  • Kim, Ki-Hyun;Park, Byung-Ok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.2
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    • pp.108-113
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    • 2013
  • Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.