• Corrosion Science and Technology
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• 제11권1호
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• pp.9-14
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• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• 한국재료학회지
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• 제27권4호
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• pp.216-220
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• 2017

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

• 대한치과기공학회지
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• 제23권1호
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• pp.55-64
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• 2001

This study is focusing on the improvement of problems of Ti-6Al-4V alloy. A new Ti based alloy, Ti-15Sn-4Nb, have designed to examine any possibility of improving the mechanical properties and biocompatibility. Specimens of Ti alloys were melted in vacuum arc furnace and homogenized at $100^{\circ}C$ for 24h. All specimens were solution treated at $812^{\circ}C$ and aged at $500^{\circ}C$ for 10h. The corrosion resistance of Ti alloys was evaluated by potentiodynamic polarization test and immersion test inl%Lactic acid solutions. Ti-15Sn-4Nb system alloys showed Widmanstatten microstructure after solution treatment which is typical microstructure of ${\alpha}+{\beta}$ type Ti alloys. Analysing the corrosion resistance of Ti alloys, it was concluded that the passive films of Ti-15Sn-4Nb system alloys are more stable than that of Ti-6Al-4V alloys. Also, the corrosion resistance of Ti-15Sn-4Nb system alloys was improved with adding elements, Hf. It was analysed that the passive film of the Ti-15Sn-4Nb alloy which was formed in air atmosphere was consisted of TiO2, SnO and NbO through X-ray photoelectron spectroscopy(XPS) analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.113-113
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• 2008

Cu CMP (Chemical Mechanical Planarization) has been used to remove copper film and obtain a planar surface which is essential for the semiconductor devices. Generally, it is known that chemical reaction is a dominant factor in Cu CMP comparing to Silicon dioxide CMP. Therefore, Cu CMP slurry has been regarded as an important factor in the entire process. This investigation focused on understanding the effect of corrosion inhibitor on copper surface and CMP results. Benzotriazole (BTA) was used as a corrosion inhibitor in this experiment. For the surface analysis, electrochemical characteristics of Cu was measured by a potentiostat and surface modification was investigated by X-ray photoelectron spectroscopy (XPS). As a result, corrosion potential (Ecorr) increased and nitrogen concentration ratio on the copper surface also increased with BTA concentration. These results indicate that BTA prevents Cu surface from corrosion and forms Cu-BTA layer on Cu surface. CMP results are also well matched with these results. Material removal rate (MRR) decreased with BTA concentration and static etch rate also showed same trend. Consequently, adjustment of BTA concentration can give us control of step height variation and furthermore, this can be applicable for Cu pattern CMP.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.229-234
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• 2017

In this study, we fabricated a TFT gas sensor with ZnO nanorods grown by hydrothermal synthesis. The suggested devices were compared with the conventional ZnO film-type TFTs in terms of the gas-response properties and the electrical transfer characteristics. The ZnO seed layer is formed by atomic-layer deposition (ALD), and the precursors for the nanorods are zinc nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) and hexamethylenetetramine ($(CH_2)6N_4$). When 15 ppm of NO gas was supplied in a gas chamber at $150^{\circ}C$ to analyze the sensing capability of the suggested devices, the sensitivity (S) was 4.5, showing that the nanorod-type devices respond sensitively to the external environment. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which showed that the oxygen deficiency of ZnO nanorods is higher than that of ZnO film, and confirms that the ZnO nanorod-type TFTs are advantageous for the fabrication of high-performance gas sensors.

• 접착 및 계면
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• 제12권4호
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• pp.144-150
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• 2011

폴리스티렌을 저수축제로 사용하고 Zn-stearate를 이형제로 사용하여 함량변화에 따라 벌크 몰드컴파운드의 표면형태 및 기계적 물성에 미치는 영향을 고찰하였다. XPS, 접촉각 측정기 등을 이용하여 표면과 깊이 방향에 대한 원소함량과 접촉각을 측정하였고, 표면형태는 FESEM을 이용하여 관찰하였으며, 표면조도 측정은 AFM을 이용하였다. 저수축제를 첨가하지 않은 경우에 비교하여 저수축제를 9.0 wt% 첨가하였을 경우에는 체적수축률은 0.35%에서 0.05%로 감소하였으며, 표면조도는 $0.27{\mu}m$에서 $0.12{\mu}m$로 감소하였다. 이형제의 함량을 1.8 wt%에서 3.6 wt%로 증가시켰을 경우에는 이형제가 주로 표면에 존재하고 표면조도를 증가시키는 것을 확인하였다. 저수축제의 함량을 5.0 wt%에서 9.0 wt%로 증가시킴에 따라 굴곡탄성율과 충격강도가 약 30% 감소하였다.

• The Journal of Advanced Prosthodontics
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• 제7권2호
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• pp.85-92
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• 2015

PURPOSE. This study aimed to investigate the efficacy of cleaning solutions on saliva-contaminated zirconia in comparison to air-abrasion in terms of resin bonding. MATERIALS AND METHODS. For saliva-contaminated air-abraded zirconia, seven cleaning methods)-no contamination (NC), water-spray rinsing (WS), additional air-abrasion (AA), and cleaning with four solutions (Ivoclean [IC]; 1.0 wt% sodium dodecyl sulfate [SDS], 1.0 wt% hydrogen peroxide [HP], and 1.0 wt% sodium hypochlorite [SHC])-were tested. The zirconia surfaces for each group were characterized using various analytical techniques. Three bonded resin (Panavia F 2.0) cylinders (bonding area: $4.5mm^2$) were made on one zirconia disk specimen using the Ultradent jig method [four disks (12 cylinders)/group; a total of 28 disks]. After 5,000 thermocycling, all specimens were subjected to a shear bond strength test with a crosshead speed of 1.0 mm/minute. The fractured surfaces were observed using an optical and scanning electron microscope (SEM). RESULTS. Contact angle measurements showed that groups NC, AA, IC, and SHC had hydrophilic surfaces. The X-ray photoelectron spectroscopy (XPS) analysis showed similar elemental distributions between group AA and groups IC and SHC. Groups IC and SHC showed statistically similar bond strengths to groups NC and AA (P>.05), but not groups SDS and HP (P<.05). For groups WS, SDS, and HP, blister-like bubble formations were observed on the surfaces under SEM. CONCLUSION. Within the limitations of this in vitro study, some of the cleaning solutions (IC or SHC) were effective in removing saliva contamination and enhancing the resin bond strength.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.49.2-49.2
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• 2009

최근, 플루이딕스칩 제작에 있어서 가격이 저렴하며 구조물 형성이 쉽다는 장점으로 인하여 유리 기판을 플라스틱 기판으로 대체하려는 연구가 많이 진행하고 있다. 하지만 플라스틱 기판은 유리 기판에 비하여 많은 장점을 갖고 있음에도 불구하고, 기판 표면이 소수성이기 때문에 유체의 흐름을 저하시키는 문제점이 있다. 기존의 플라스틱 기판을 친수성으로 개질하는 방법으로는 화학적처리, 자외선 조사, 산소플라즈마 처리 등의 방법이 있었으나, 화학적처리 방법은 공정의 민감성과 폐기물로 인한 양산적용의 한계가 있고, 자외선 조사법 및 산소 플라즈마 처리는 친수성이 영구적이지 않다는 결정적인 문제점이 있다. 이는 플라스틱 플루이딕스칩의 신뢰도를 크게 저해하여 상용화에 큰 문제점으로 작용한다. 이러한 문제점을 극복하기 위한 새로운 방법의 친수성 표면처리가 요구되어 지고 있다. 본 연구에서는, 기존 플라스틱 기판의 친수성 표면처리 방법들의 문제점들을 개선하고자 플라스틱 기판의 변형을 야기하지 않는 저온 PE-CVD 방식을 이용하여 균질한 두께의 $SiO_2$박막을 형성 하였으며, 형성된 박막을 liquid self-assembled monolayer(L-SAM)방식을 이용하여 아민 표면으로 개질하였다. 이를 통해, 플라스틱 채널 상에서 유체의 원활한 흐름, 형성된 아민 표면에 단백질 및 DNA와 같은 생체 물질 고정화의 용이성 및 영구적 표면개질의 특성을 얻을 수 있었다. 이뿐만 아니라, 플라스틱 기판 외에도 재료에 관계없이 모든 물질의 표면을 생체 안정성이 뛰어난 친수성 표면으로 개질 할 수 있으며, 알데히드 및 카르복시산 등의 다양한 작용기로 변형이 쉽다는 장점이 있다. 개질된 친수성 표면의 평가를 위하여 시간에 따른 접 촉각 및 형광 스캐너(Fluorescence Scanner)를 이용하여 영구적인 친수성 특성 및 생체물질 적합성을 파악하였다. 또한, L-SAM 조건에 따른 아민의 형성정도를 측정하기 위하여 XPS(X-ray Photoelectron Spectroscopy) 분석을 실시 하였다. 최적화된 표면처리를 실제 플라스틱 플루이딕스칩에 적용하여, 유체의 흐름을 관찰 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.154-154
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• 1999

금속산화막은 전자부품 및 광학적 응용에 널리 사용되고 있다. 특히 알루미늄의 산화막은 유전체의 재료로 커패시터에 많이 사용되고 있다. 이러한 알루미늄 산화막을 plasma를 이용한 ion plating에 의해 형성하였다.Activated Reactive Evaporation은 화합물의 증착율을 높이는데 좋은 증착법이다. 이러한 증착법에는 reactive ion plating와 ion-assisted deposition 그리고 ion beam sputtering 등이 있다. 본 연구에서는 알루미늄 산화막을 증착시키기 위해 plasma를 이용한 electron-beam법을 사용하였다. Turbo molecular pump로 챔버 내의 진공을 약 10-7torr까지 낸린 후 5$\times$10-5torr까지 O2와 Ar을 주입시켰다. 각 기체의 분압은 RGA(residual gas analyzer)로 조사하여 일정하게 유지시켰다. plasma를 발생시키기 위해 filament에서 열전자를 방출시키고 1kV 정도의 electrode에 의해 가속시켜 이들 기체들과 반응시켜 plasma를 발생시켰다. 금속 알루미늄을 5kV정도의 고전압과 90mA의 전류로 electron beam에 의해 증발시켰다. 기판의 흡착율을 높ㅇ기 위해 기판에 500V로 bias 전압을 걸어 주었다. 증발된 금속 알루미늄 증기들이 plasmaso의 산소 이온들과 활성 반응을 이루어 알루미늄 기판 위에 Al2O3막을 형성하였다. 알루미늄 산화막을 분석하기 위해 XPS(X-ray Photoelectron Spectroscopy)로 화학적 조성을 조사하였는데, 알루미늄의 2p전자의 binding energy가 76.5eV로 측정되었다. 이는 대부분 증착된 알루미늄이 산소 이온과 반응하여 Al2O3로 형성된 것이다. SEM(Scanning electron Microscopy)과 AFM(Atomim Force microscopy)으로 증착박 표면의 topology와 roughness를 관찰하였다. grain의 크기는 10nm에서 150nm이었고 증착막의 roughness는 4.2nm이었다. 그리고 이 산화막에 전극을 형성하여 유전 상수와 손실률 등을 측정하였다. 이와 같이 plasma를 이용한 3-beam에 의한 증착은 금속의 산화막을 얻는데 유용한 기술로 광학 재료 및 유전 재료의 개발 및 연구에 많이 사용될 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.