• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.344-350
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• 2010

The improved photocatalytic performance of a carbon/$TiO_2$ composite was studied for the Bisphenol A (BPA) decomposition. Titanium tetraisopropoxide (TTIP) and a rice husk from Korea were heterogeneously mixed as the titanium and carbon sources, respectively, for 3 h at room temperature, and then thermally treated at $600^{\circ}C$ for 1 h in $H_2$ gas. The transmission electron microscopy (TEM) images revealed that the bulk carbon partially covered the $TiO_2$ particles, and the amount that was covered increased with the addition of the rice husk. The acquired carbon/$TiO_2$ composite exhibited an anatase structure and a novel peak at $2{\theta}=32^{\circ}$, which was assigned to bulk carbon. The specific surface area was significantly enhanced to 123~164 $m^2/g$ in the carbon/$TiO_2$ composite, compared to $32.43m^2/g$ for the pure $TiO_2$. The X-ray photoelectron spectroscopy (XPS) results showed that the Ti-O bond was weaker in the carbon/$TiO_2$ composite than in the pure $TiO_2$, resulting in an easier electron transition from the Ti valence band to the conduction band. The carbon/$TiO_2$ composite absorbed over the whole UV-visible range, whereas the absorption band in the pure$TiO_2$ was only observed in the UV range. These results agreed well with an electrostatic force microscopy (EFM) study that showed that the electrons were rapidly transferred to the surface of the carbon/$TiO_2$ composite compared to the pure $TiO_2$. The photocatalytic performance of the BPA removal was optimized at a Ti:C ratio of 9.5:0.5, and this photocatalytic composite completely decomposed 10.0 ppm BPA after 210 min, whereas the pure $TiO_2$ achieved no more than 50% decomposition under any conditions.

• Analytical Science and Technology
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• v.29 no.1
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• pp.35-42
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• 2016

A new nano-composite carbon ink for the development of disposable dopamine (DA) biosensors based on screen-printed carbon electrodes (SPCEs) is introduced. The method developed uses SPCEs coupled with a tyrosinase modified nano-composite carbon ink. The ink was prepared by an “in-house” procedure with reduced graphene oxide (rGO), Pt nanoparticles (PtNP), and carbon materials such as carbon black and graphite. The rGO-PtNP carbon composite ink was used to print the working electrodes of the SPCEs and the reference counter electrodes were printed by using a commercial Ag/AgCl ink. After the construction of nano-composite SPCEs, tyrosinase was immobilized onto the working electrodes by using a biocompatible matrix, chitosan. The composite of nano-materials was characterized by X-ray photoelectron spectroscopy (XPS) and the performance characteristics of the sensors were evaluated by using voltammetric and amperometric techniques. The cyclic voltammetry results indicated that the sensors prepared with the rGO-PtNP-carbon composite ink revealed a significant improvement in electro-catalytic activity to DA compared with the results obtained from bare or only PtNP embedded carbon inks. Optimum experimental parameters such as pH and operating potential were evaluated and calibration curves for dopamine were constructed with the results obtained from a series of amperometric detections at −0.1 V vs. Ag/AgCl. The limit of detection was found to be 14 nM in a linear range of 10 nM to 100 µM of DA, and the sensor’s sensitivity was calculated to be 0.4 µAµM⁻¹cm⁻².

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.2-307.2
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• 2016

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.418.1-418.1
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• 2016

Atomic layer deposition (ALD)를 이용하여 증착된 aluminum oxide ($Al_2O_3$)는 우수한 패시베이션 특성을 가지고 있다. $Al_2O_3$ 박막은 많은 수소를 가지고 있기 때문에 화학적 패시베이션에 의한 실리콘 표면을 패시베이션 할 수 있다. 또한 $Al_2O_3$는 강한 고정전하를 가져 전계 효과 패시베이션을 할 수 있다. 따라서 $Al_2O_3$ 박막을 태양전지에 적용할 경우 높은 효율을 기대할 수 있다. 실리콘 태양전지를 제작하기 위해 소성공정(> $800^{\circ}C$)은 필수이다. $Al_2O_3$ 박막은 많은 수소를 가지고 있기 때문에 소성공정시 수소가스를 방출하여 $Al_2O_3$ 박막에 블리스터를 형성시킨다. 이 블리스터는 $Al_2O_3/Si$ 계면에서 발생하여 패시베이션 특성을 감소시킨다. 블리스터를 억제하기 위해 수소의 양을 조절할 필요가 있다. 이 실험에서는 plasma-assisted atomic layer deposition (PAALD)으로 $Al_2O_3$를 증착하였다. PAALD의 RF power를 200 W부터 800 W까지 조절하여 $Al_2O_3$ 막에 포함되는 OH의 농도를 조절하였다. $Al_2O_3$ 박막에 포함되는 OH 농도는 X-ray Photoelectron Spectroscopy (XPS)를 이용하여 분석하였다. 열처리공정 후, 화학적 패시베이션에 의한 유효 반송자 수명 (${\tau}_{eff}$) 향상이 나타났다 소성공정 후 블리스터가 형성되지 않는 조건에서 화학적 패시베이션과 전계 효과 패시베이션에 의해 ${\tau}_{eff}$가 증가하였다. 블리스터가 형성되었을 때 기존 논문들과 같이 패시베이션 특성이 감소하였다. 패시베이션 특성의 감소는 블리스터에 의한 화학적 패시베이션의 감소 때문이며 전계 효과 패시베이션은 오히려 증가하였다. 이를 통해 고온에서 열안정성을 갖는 $Al_2O_3$ 박막을 만들었으며 블리스터가 형성되지 않았고 패시베이션 특성이 증가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.135-136
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• 2009

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2$ in $BCl_3/Ar/Cl_2$ plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $BCl_3$(16 sccm)/Ar(4 sccm)/$Cl_2$(3 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data, the suggestions on the ZnO etch mechanism were made.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Asian Journal of Atmospheric Environment
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• v.10 no.2
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• pp.99-113
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• 2016

In order to improve the portability of basic absorbents monoethanolamine (MEA) and glycine (Gly), both were supported on microporous activated carbon (AC). Chemical modification by alkali-metal ion exchange (of Li, Na, K) was carried out on Gly-based absorbents. All supported absorbents were subjected to $CO_2$ absorption capacity (pure $CO_2$) and selectivity (indoor level) tests. Textural and chemical characterizations were carried out on test sorbents. All impregnation brought about significant reduction of specific surface area and microporosity of the adsorbent Depreciation in the textural properties was found to result to reduction in pure $CO_2$ sorption. Contrarily, low-level $CO_2$ removal capacity was enhanced as the absorbent dosage increases, resulting in supported 5 molar MEA in methanol solution. Adsorption capacities were improved from 0.016 and 0.8 in raw ACs to 1.065 mmol/g for MEA's. Surface chemistry via X-ray photoelectron spectroscopy (XPS) of the supported sorbents showed the presence of amine, pyrrole and quaternary-N. In reducing sequence of potency, pyridine, amine and pyrrolic-N were noticed to contribute significantly to $CO_2$ selective adsorption. Furthermore, the adsorption isotherm study confirms the presence of various SNGs heterogeneously distributed on AC. The adsorption mechanism of the present AC adsorbents favored Freundlich and Langmuir isotherm at lower and higher $CO_2$ concentrations respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.924-928
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• 2010

In this study, $HfAlO_3$ thin films using gate insulator of MOSFET were etched in inductively coupled plasma. The etch characteristics of the $HfAlO_3$ thin films has been investigated by varying $O_2/BCl_3$/Ar gas mixing ratio, a RF power, a DC bias voltage and a process pressure. As the $O_2$ concentration increases further, $HfAlO_3$ was redeposited. As increasing RF power and DC bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas, as decreasing of the process pressure, etch rates of the $HfAlO_3$ thin films increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). These peaks moved a binding energy. This chemical shift indicates that there are chemical reactions between the $HfAlO_3$ thin films and radicals and the resulting etch by-products remain on the surface.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.