• Korean Journal of Materials Research
• /
• v.30 no.4
• /
• pp.169-175
• /
• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.53-54
• /
• 2006

Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

• Korean Journal of Materials Research
• /
• v.14 no.2
• /
• pp.141-145
• /
• 2004

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.

• Journal of the Korean Chemical Society
• /
• v.47 no.5
• /
• pp.472-478
• /
• 2003

In this work, the zeolite/diglycidylether of bisphenol A(DGEBA) systems were investigated in terms of the cure kinetics and mechanical interfacial properties of the composites. The 4, 4-diamino diphenyl methane(DDM) was used as a curing agent for epoxy. Two types of zeolite(PZ) were prepared with 15 and 35 wt% KOH treatments(15-BZ and 35-BZ, respectively) for 24 h, and their surface characteristics were studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction(XRD). Cure kinetics of the composites were examined in the context of differential scanning calorimetry(DSC), and mechanical interfacial properties were investigated in critical stress intensity factor($K_{IC}$) and critical strain energy release rate($G_{IC}$). In the results of XPS and XRD, sodium ion(Na) of zeolite was exchanged for potassium ion(K), resulting from the treatment of KOH. Also, $Si_{2p}/Al{2p}$ composition ratios of the treated zeolite were increased, which could be attributed to the weakening of Al-O bond in framework. Cure activation energy($E_a$) of 15-BZ composites was decreased, whereas KIC and $G_{IC}$ were increased, compared with those of the pure zeolite/DGEBA composites. It was probably accounted that the acidity of zeolite was increased by surface treatments and the cure reaction between zeolite and epoxy was influenced on the increased acidity of zeolite.

• Applied Chemistry for Engineering
• /
• v.26 no.2
• /
• pp.193-198
• /
• 2015

Ceria supported on various commercial $TiO_2$ catalysts were prepared by wet-impregnation method. We confirmed that the correlation between physicochemical properties of $TiO_2$ supports and SCR activities. Physicochemical properties of the various $TiO_2$ were evaluated using X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) surface area, X-ray photoelectron spectroscopy (XPS), and pH analysis. Ce/Ti catalyst exhibited different SCR activities with respect to physicochemical properties of $TiO_2$. An excellent activity was obtained as the surface area of $TiO_2$ increased. In the case of CeOx surface density, the excellent activity in a range of $2.5{\sim}14.5CeOx/nm^2$ was achieved and the activity tended to decrease above $14.5CeOx/nm^2$. The O/Ti mole ratio of $TiO_2$ in the range of 1.32 to 1.79 showed an excellent SCR activity. It was also confirmed that the pH of the $TiO_2$ has no effects on the SCR activity. In order to achieve excellent SCR activities, ceria oxide should be supported on $TiO_2$ possessing a high specific surface area and certain O/Ti mole ratio. In addition, the catalyst with the low CeOx surface density resulted from the high dispersed ceria oxide should be prepared.

• Journal of the Korean Vacuum Society
• /
• v.6 no.2
• /
• pp.143-150
• /
• 1997

In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.

• Applied Chemistry for Engineering
• /
• v.18 no.4
• /
• pp.356-360
• /
• 2007

Recently, dye sensitized solar cells (DSSCs) composed of nanoporous $TiO_2$, light-sensitive dyes, electrolytes, and counter electrode have been received much attention. Nanostructured particles with higher surface area for the higher adsorption of Ru (II) dye are required to increase the quantity of light absorption. Also, it has been reported that the key factor to achieve high energy conversion efficiency in the photoelectrode of DSSC is the heat treatment of $TiO_2$ paste with acid addition. In this work, we investigated the influence of acid treatment of $TiO_2$ solar cell on the photovoltaic performance of DSSC. The working electrodes fabricated in this work were characterized by X-ray photoelectron spectroscopy (XPS), extended X-ray absorption fine structure (EXAFS), field emission scanning electron microscope (FE-SEM), and atomic force microscope (AFM). In addition, the influence of nanostructured photoelectrode fabricated with the acid-treated paste on the energy conversion efficiency was investigated on the basis of photocurrent-potential curves. It was found that the influence of acid-treated paste on the photovoltaic efficiency was significant.

• Journal of the Korean Electrochemical Society
• /
• v.8 no.1
• /
• pp.32-36
• /
• 2005

[ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.

• Korean Journal of Materials Research
• /
• v.9 no.11
• /
• pp.1129-1136
• /
• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.3
• /
• pp.83-90
• /
• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.