• 제목/요약/키워드: X-ray Photoelectron Spectroscopy (XPS)

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Pt합금 촉매에서 메탄을 산화 반응에 미치는 제2금속의 영향 (The Effects of 2nd Metals in Pt-based Electrocatalysts on Methanol Oxidation)

  • 김영민;박경원;최종호;박인수;성영은
    • 한국전기화학회:학술대회논문집
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    • 한국전기화학회 2002년도 연료전지심포지움 2002논문집
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    • pp.179-182
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    • 2002
  • The electrooxidation of methanol was studied using Pt, PtRu(1:1), PtNi(1:1), PtRh(1:1) and PtOs(1:1) alloy nanoparticles for application as electrocatalysts. The effects of the second metals in the electrocatalytic activity was investigated using cyclic voltammetry (CV), chronoamperometry (CA), X-ray photoelectron spectroscopy (XPS). There are the metallic and oxygen states in the PtRu and PtOs electrocatalysts . In the XPS of PtRu and PtOs alloy nanoparticles, the oxygen sources were dominant as the second metal's effects. Negative shifts of the binding energies of Pt for the PtNi, PtRh alloy nanoparticles were determined by XPS measurements, which can be explained by electronic effects.

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MEICP에 의한 (Ba,Sr)$TiO_3$ 박막의 식각 메커니즘에 관한 연구 (A Study on the Etching Mechanism of (Ba,Sr)$TiO_3$ Thin Films using MEICP)

  • 민병준;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.52-55
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    • 2000
  • In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

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$CF_4$/Ar 플라즈마에 의한 BST 박막 식각 특성 (Etching Characteristics BST Thin Film in $CF_4$/Ar Plasma)

  • 김동표;김창일;서용진;이병기;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.866-869
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    • 2001
  • In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

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Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

  • Kim, Young-Ho;Uosaki, Kohei
    • Journal of Electrochemical Science and Technology
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    • 제4권4호
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    • pp.163-170
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    • 2013
  • Tantalum anodic oxide film was prepared in citric acid solution of various concentrations and the prepared Ta anodic oxide film was characterized by various electrochemical techniques and X-ray photoelectron spectroscopy (XPS). The prepared Ta anodic oxide film showed typical n-type semiconducting properties and the dielectric properties were strongly dependent on the citric acid concentration. The variation of electrochemical and electronic properties was explained in terms of electrolyte anion incorporation into the anodic oxide film, which was supported by XPS measurements.

An XPS Study of Oxyfluorinated Multiwalled Carbon Nano Tubes

  • Yun, Seok-Min;Kim, Ju-Wan;Jung, Min-Jung;Nho, Young-Chang;Kang, Phil-Hyun;Lee, Young-Seak
    • Carbon letters
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    • 제8권4호
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    • pp.292-298
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    • 2007
  • In order to investigate functional groups on the surface of Multi-walled Carbon Nanotubes (MWCNTs) induced by oxyfluorination, XPS (X-ray photoelectron spectroscopy) analysis was carried out. All core level spectra of MWCNTs were deconvoluted to several Pseudo-Voigt functions (sum of Gaussian-Lorentzian functions). Both O1s and F1s binding energy of oxyfluorinated MWCNTs shifted high value as increment of fluorine mixing ratio. The carbon-fluorine covalent bonding concentration increased as increment of fluorine mixing ratio. The shape and intensity of OF10-MWCNTs are similar with those of as-received MWCNTs. However, the intensity and binding energies of main peak position of OF20-MWCNTs and OF30-MWCNTs were dramatically increased by oxyfluorination.

Tribochemical Mechanism of Borate of Triethanolamine in Water Solution by XPS

  • Du, Da-Chang;Kim, Seock-Sam;Suh, Chang-Min
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2001년도 제34회 추계학술대회 개최
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    • pp.374-379
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    • 2001
  • Tribochmical behaviors of a borate of triethanolamine in water solution were evaluated using a four-ball wear tester. X-ray photoelectron spectroscopy (XPS) was employed to study tribochemical species on worn scars of steel balls. Results show that a thick deposit layer was produced on the worn scars, which came from the decomposition of the borate. The surface film on the worn scars was mostly consisted with H$_{3}$BO$_{3}$, B$_{2}$O$_{3}$ and large amounts of ferricyanides.

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Effect of Ar ion Sputtering on the Surface Electronic Structure of Indium Tin Oxide

  • Lee, Hyunbok;Cho, Sang Wan
    • Applied Science and Convergence Technology
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    • 제25권6호
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    • pp.128-132
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    • 2016
  • We investigated the effect of Ar ion sputtering on the surface electronic structure of indium tin oxide (ITO) using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) measurements with increasing Ar ion sputtering time. XPS measurements revealed that surface contamination on ITO was rapidly removed by Ar ion sputtering for 10 s. UPS measurements showed that the work function of ITO increased by 0.2 eV after Ar ion sputtering for 10 s. This increase in work function was attributed to the removal of surface contamination, which formed a positive interface dipole relative to the ITO substrate. However, further Ar ion sputtering did not change the work function of ITO although the surface stoichiometry of ITO did change. Therefore, removing the surface contamination is critical for increasing the work function of ITO, and Ar ion sputtering for a short time (about 10 s) can efficiently remove surface contamination.

In-situ XPS Study of Core-levels of ZnO Thin Films at the Interface with Graphene/Cu

  • Choi, Jinsung;Jung, Ranju
    • Journal of the Korean Physical Society
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    • 제73권10호
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    • pp.1546-1549
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    • 2018
  • We have investigated core-levels of ZnO thin films at the interface with the graphene on Cu foil using in-situ X-ray Photoelectron Spectroscopy (XPS). Spectral evolution of C 1s, Zn 2p, and O 1s are observed in real time during RF sputtering deposition. We found binding energy (BE) shifts of Zn 2p and 'Zn-O' state of O 1s depending on ZnO film thickness. Core-levels BE shifts of ZnO will be discussed on the basis of electron transfer at the interface and it may have an important role in the electronic transport property of the ZnO/graphene-based electronic device.

Charge Redistribution of Pt-based Alloys

  • Lim, K.Y.;Chung, Y.D.;Kwon, S.Y.;Lee, Y.S.;C.N.Whang;Y.Jeon;Park, B.S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.171-171
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    • 1999
  • We studied the charge redistribution in the Pt-M (M=Cu, Co) alloys by X-ray Absorption Near Edge Spectroscopy(XANES) and X-ray Photoelectron Spectroscopy(XPS). These analysis tools provide us information about the charge transfer in the valence band of intermetallic bonding. The samples were prepared by arc-melting method. After annealing this samples in vacuum for several hours, we cold get the ordered samples, which were confirmed with XRD analysis. the core and valence level energy shift in these system were investigated by Mg $K\alpha$(1253.6eV) x-ray source for Pt-Co alloys and monochromatized Al $K\alpha$ (1486.6eV) for Pt-Cu alloys. Pt L2, L3-edge, and Cu, Co K-edge XANES spectra were measured with the total electron-yield mode detector at the 3Cl beam line of the PLS (Pohang light source0. from the changes of White line (WL) area and the core level shifts of the each metal sites, we can obtain the information about the electrons participating in the intermetallic bonding of the Pt-Cu and Pt-Co alloys.

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무전해 Ni도금박막 형성에 DMAB가 미치는영향

  • 김형철;김나영;백승덕;나사균;이연승
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.204.1-204.1
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    • 2014
  • 스마트폰과 같은 통신기기 및 각종 전자제품에 있어 크기의 축소와 간소화 추세에 따라 인쇄회로기판(PCB)의 초미세회로설계 기술이 요구됨에 따라, 인쇄회로기판과 첨단 전자부품 사이의 접합 신뢰성을 향상시키기 위해 무전해 니켈 도금이 널리 사용되고 있다. 일반적으로, 무전해 Ni도금은 강산, 강염기성 용액을 이용하여 수행되고 있다. 따라서, 공정과정 중에 기판의 손상을 초래하기도 할뿐만 아니라, 환경적으로도 문제시 되고 있다. 본 연구에서는 친환경적 도금공정의 개발을 위해 중성에서 N-(B)무전해 도금을 시행하였다. 중성의 무전해 도금공정은 어떠한 기판을 사용하여도 기판의 손상없이 도금이 가능하다는 장점을 가지고 있고, Boron(B)은 Ni을 비정질화 시키는 물질로 알려져 있다. B가 첨가된 무전해 Ni도금 박막에 있어 B의 영향을 알아보기 위하여 중성조건에서 B를 포함한 DMAB의 첨가량을 조절하였다. Ni-(B) 무전해 도금 시 도금조의 온도는 $40^{\circ}C$로 하였고, 무전해 도금액의 pH는 7(중성)로 유지하였다. Cu Foil기판을 사용하여 DMAB의 양에 따라 성장된 Ni-B무전해 도금 박막의 특성을 분석하기 위해 X-ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), Optical microscope (OM), X-ray Photoelectron Spectroscopy (XPS), X-ray Absorption Spectroscopy (XAS)을 이용하였다.

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