• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.480-485
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• 2011

ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.91-91
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• 2000

a-C:H 혹은 a-SiC:H 박막은 광전소자 및 태양전지 등의 개발에 있어서 중요한 물질이다. 우리는 a-C:H 및 a-SiC:H 박막을 PECVD (plasma-enhanced chemical vapor deposition) 방법으로 증착시키고, 박막의 가열에 따른 스핀밀도의 변화를 ESR (electron spin resonance) 측정을 통하여 조사하였다. PECVD 증착가스는 Ch4, SiH4 가스를 사용하였고, 기판은 Corning 1737glass를 사용하였으며, 기판 온도는 300-40$0^{\circ}C$, 증착 압력은 0.1-0.3 Torr, r.f. 전력은 3-36W 사이에서 변화되었다. ESR 측정은 상온 X-band 영역에서 수행되었고, modulation amplitude는 2.5G, modulation frequency는 100kHz 이었다. a-C:H 혹은 a-SiC:H 박막은 진공상태의 reactor, 혹은 공기중의 furnace 안에서 300-50$0^{\circ}C$ 영역에서 3-8시간 정도 가열되거나, 혹은 상온에서 약 50$0^{\circ}C$ 정도까지 단계적으로 가열되었다. 증착된 a-C:H 박막의 초기 구조는 Raman 측정으로부터 polymer-like Carbon으로 추정되었으며, 300-35$0^{\circ}C$ 가열시 초기 1시간 정도 사이에는 스핀밀도가 증가되었으나, 그 후 8시간 정도까지의 가열의 경우에도 대체로 동일하게 나타났다. 또한 상온으로부터 약 50$0^{\circ}C$까지 단계적으로 온도를 높여주며, 각 단계마다 1시간씩 가열했을 때도 30$0^{\circ}C$ 정도까지는 스핀밀도가 증가하다가 더 높은 온도로 가면서 다시 스핀밀도가 감소함을 볼 수 있었다. 이러한 스핀밀도의 초기 증가 및 감소를 일으키는 메카니즘에 대해서 논의해 볼 것이다.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Journal of the Korean Chemical Society
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• v.37 no.3
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• pp.302-308
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• 1993

Monolayers of calcium palmitate were deposited on a piezoelectric quartz crystal plate by the Langmuir-Blodgett(LB) technique, and it was found from frequency changes of the quartz crystal deposited LB films. The usual carbonyl absorbance at 1704 cm$^{-1}C$ was replaced by the split band in the 1540~1590 cm$^{-1}C$. The two absorptions at 1580 cm$^{-1}C$ and 1540 cm$^{-1}C$ were assigned to the antisymmetric stretching vibration of the calcium carboxylate group and the hydrated species due to the lowering carbonyl stretching frequency by hydrogen bonding$^1$ respectively. Besides, it was demonstrated by X-ray diffraction analysis. The swelling behaviour of LB films in water phase at 23$^{\circ}C$ was observed from the frequency change of the LB films deposited quartz crystal with time. Calcium palmitate LB films has been found to swell substantially in water without flaking, whereas hexadecanol LB films hardly swelled in water. Amount of swelling of calcium palmitate LB films was equivalent to 47 wt.${\%}$ of the dry LB films, which means that ca. 7 water molecules were incorporated per calcium palmitate amphiphile. Chemical structure of calcium palmitate LB film was estimated as [CH$_3$(CH$_2$)$_{14}$COO]$_2$Ca${\cdot}$XH$_2$O, and the hydration number was 1.

• The Journal of the Acoustical Society of Korea
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• v.23 no.1
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• pp.17-23
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• 2004

The mobile radio channel can be simulated as a complex-valued random process with narrow-band spectrum. This paper describes a real-time implementation of that process using a INS320C6414 digital signal processor and XC2VP30 Virtex FPGA. The simulator presented here is not only a comprehensive model of the flat fading but also frequency selective fading mobile channel conditions. To replicate the statistical characteristics of the multipath fading environment with the minimum computational burden, multi-rate techniques are employed to resolve practical problems such as variable sampling rate. The simulator produces accurate and consistent results due to digital implementation. It is very flexible and simple to program for various field conditions in mobile communications with a graphical user interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.158-165
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• 2010

This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.9A
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• pp.694-701
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• 2003

In this paper, we present a hardware structure and new features of a smart antenna BTS (Base Transceiver Station) for CDMA2000 1X system. The proposed smart antenna BTS is a composite system consisting of many subsystems, i.e., array antenna element, frequency up/down converters, AD (Analog-to-Digital) and DA (Digital-to-Analog) converters, spreading/despreading units, convolutional encoder/Viterbi decoder, searcher, tracker, beamformer, calibration unit etc. Through the experimental tests, we found that the desired beam-pattern in both uplink and downlink communications is provided through the calibration procedure. Also it has been confirmed that the adaptive beamforming algorithm adopted to our smart antenna BTS is fast and accurate enough to support 4 fingers to each user. In our experiments, commercial mobile terminals operating PCS (Personal Communication System) band have been used. It has been confirmed that the smart antenna BTS tremendously improves the FER (Frame Error Rate) performance compared to the conventional 2-antenna diversity system.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.5
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• pp.1-5
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• 2010

This paper deals with a method to measure the thickness of scale-layer, iron oxide formed on the surface of the rolling steel, using a dielectric lens antenna. The dielectric lens antenna has an independent characteristic with the frequency in the X-band and changes the spherical wave radiated from a horn antenna into a plane wave at the focusing point. Using this concept, we regard a scale-layer on the rolling steel as a dielectric-PEC(Perfect Electric Conductor) layer and apply a theoretical analysis of the normal-incident plane wave. To reduce the phase error arising from the use of the dielectric lens antenna, this paper utilizes a regression process algorithm. In comparison with the conventional iteration algorithm, the present algorithm led to a unique solution for the thickness of the scale-layer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.8
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• pp.830-838
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• 2003

In this paper, TX/RX dual operation microstrip single antenna for satellite communication is designed, analyzed, fabricated and measured. TX/RX frequency ranges are 14.0∼l4.5 GHz, 11.7∼12.75 GHz in respectively and vertical and horizontal polarizations are used for TX and RX. This antenna uses microstrip direct feeding for RX and aperture coupled strip-line feeding for TX and accommodates stacked elements for a high directivity and wide impedance bandwidth. In an analysis of single element, FDTD and MOM was compared and FDTD analysis was more accurate because of the consideration of finite structure and imperfect two ground planes. The proposed structure facilitates generally to an extension of two dimensional array and lower an unwanted radiation by strip-line feed in TX. TX/RX 8${\times}$4 array has a return loss below -10 dB, -14 dB in TX, RX respectively and a gain ranging from 19.1∼20.7 dB in TX, 21.2∼21.8 dB in RX which has a radiation efficiency of 43∼5l %, 52∼57 %.