• Title/Summary/Keyword: X-band frequency

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A Code Correlation Type RF Short Range Measurement System for High-Speed Mobile Targets (고속 이동체에 대한 전파형 코드상관방식 근거리 측정 시스템)

  • Lim, Tae-Wook;Lee, Seok-Woo;Jung, Jong-Chul
    • Proceedings of the KIEE Conference
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    • 1998.07g
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    • pp.2430-2432
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    • 1998
  • Generally, in the best-known Pulse-type type and Frequency Modulated Continuous Wave(FM/CW)-type RF range measurement systems, the nearest measurable distance between antenna of system and targets is limited to several tens of meters. Moreover, in case of high-speed targets it is more difficult to measure the distance precisely. In this paper we design our own RF(X-band) range(up to 15 meters) measurement system usi code correlation for high- speed targets. It 0 the correlation value between transmitting receiving PN (Pseudo -Noise) codes. So we determine the distance between antenna of s and targets using this correlation value. We fabricated it using MIC techniques and experimental results show that the proposed syste fully qualified for a short range measurement syste

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Method for Dielectric Constant Measurement of Nonmagnetic Materials at M/W Frequency (마이크로파를 이용한 비자성 물질의 유전상수 측정)

  • 강형목;박한규
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.7 no.2
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    • pp.43-48
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    • 1970
  • The precise measurement technique for dielectric constent of high-loss nonmagnetic materials is described. This technique use6 is based upon cavity resonance method and impedance method. Dielectric constant can be calculated from simple formulas without using transcen-dental equations. The error contained in x-band yields loss tangent, 3%, and dielertric constant, 1%, for materials filled in cross section of waveguide.

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Surface Characterization of Zinc Selenide Thin Films Obtained by RF co-sputtering

  • Lee, Seokhee;Kang, Jisoo;Park, Juyun;Kang, Yong-Cheol
    • Journal of the Korean Chemical Society
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    • v.66 no.5
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    • pp.341-348
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    • 2022
  • In this work, radio frequency magnetron sputtering was used to deposit zinc selenide thin films on p-type silicon (100) wafers and glass substrates in a high vacuum chamber. Several surface characterization instruments were implemented to study the thin films. X-ray photoelectron spectroscopy results revealed that oxidized Zn bound to Se (Zn-Se) at 1022.7 ± 0.1 eV becomes the dominant oxidized species when Se concentration exceeds 70%. Scanning electron microscopy coupled with energy dispersive spectroscopy showed that incorporating Se in Zn thin films will lead to formation of ZnSe grains on the surface. Contact angle measurements indicated that ZnSe-60 exhibited the lowest total surface free energy value of 24.94 mN/m. Lastly, ultraviolet-visible spectrophotometry and ultraviolet photoelectron spectroscopy data evinced that the energy band gap gradually increases with increasing Se concentration with ZnSe-70 having the highest work function value of 4.91 eV.

Laminating Rule for Predicting the Dielectric Properties of the E-glass/Epoxy Laminate Composite (유리섬유/에폭시 복합재료 적층판의 유전성질 예측을 위한 적층판 법칙)

  • Chin, Woo-Seok;Lee, Dai-Gil
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2005.04a
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    • pp.141-145
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    • 2005
  • Since the electromagnetic properties of fiber reinforced polymeric laminate composite can be tailored effectively by adjusting its composition and regulating the stacking sequence, it is plausible material for fabricating the radar absorbing structures (RAS) of desired performance. In order to design the effective electromagnetic wave (EM) absorber with the fiber reinforced polymeric laminate composite, its electromagnetic characteristics should be available and could be regulated easily in the target frequency bands. In this study, dielectric characteristics of the E-glass/epoxy laminate composites were measured by the free space method in the X-band frequency range ($8.2\;{\sim}\;12.4\;GHz$). In order to describe the dielectric behavior of laminate composites of arbitrary stacking sequences, the equivalent circuit model and the laminating equations for estimating dielectric properties were proposed, and experimentally verified. From the comparison of the predicted and measured data, the proposed method predicted well the experimentally measured data.

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RF Transceiver Design and Implementation for Common Data Link (공용 데이터링크 RF 송수신기 설계 및 구현)

  • Kim, Joo-Yeon
    • Journal of IKEEE
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    • v.19 no.3
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    • pp.371-377
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    • 2015
  • This paper is about the RF transceiver designed and implementation for common data link. The trasmitter is configured as a frequency up-converter, a power amplifier and a duplexer. The receiver is configured as a duplxer, a frequency down-converter and a low noise amplifier. The maximum transmission distance, the reception sensitivity is designed to meet the electrical and temperature characteristics and the like. Using a modeling and simulation in order to meet the requirements of the RF transceiver has been designed and implemented. Transmitting output power and Noise Figure has been measured with 38.58dBm and 5.5dB, respectively. All of the electrical and temperature specifications was meet. Was confirmed all of the requirement specification by electrical characteristics test and temperature characteristics test.

Design of Subharmonic Injection Locked Oscillator (부고조파를 이용한 X-band 주입 동기 발진기 설계 및 제작)

  • 전영상;이문규;남상욱
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.5
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    • pp.653-662
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    • 1999
  • In this paper, subharmonically injection locked oscillator(SILO) was designed and measured. SILO with series feedback was designed using Two Signal Method(TSM). The free-running oscillator frequency was 9.4 GHz with 6 dBm output power. In case of injection, the multiplied injected signal locked the free-running frequency. The locked signal output power was higher than any other spurious response at least 40 dB. The locking range was 220MHz (second subharmonic locking), 100 MHz(4th subharmonic locking), and phase noise was -111 dBc/Hz, -104 dBc/Hz at 100kHz offset, respectively.

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Design of Transparent Electromagnetic Absorbing Structure using Metal Grid Mesh Printing (Metal Grid Mesh 인쇄를 이용한 투명 전파 흡수구조 설계)

  • Yoon, Sun-Hong;Lee, Jun-Sang;Lee, In-Gon;Hong, Ic-Pyo
    • Journal of the Korea Institute of Military Science and Technology
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    • v.19 no.3
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    • pp.294-301
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    • 2016
  • In this paper, we designed the transparent circuit analog radar absorbing structure using printed metal grid mesh for enhanced optical transmittance. To obtain wideband electromagnetic absorption and enhanced optical transparency at X-band, we proposed the resistive FSS(Frequency Selective Surface) using printed metal mesh pattern on transparent glass with PEC(Perfect Electric Conductor) plane using ITO(Indium Thin Oxide) coating. We then fabricated the proposed structure to verify the simulation results obtained from commercial EM simulator. The comparisons between the simulation and measured results show good agreements. The results also show that the proposed radar absorbing structure can provide wideband reflection as well as better optical transparency. We can apply this proposed structure to the canopy of stealth aircraft and other stealth and security applications for visible transparency.

The Properties of Boron-doped Zinc Oxide Film Deposited according to Oxygen Flow Rate

  • Kim, Dong-Hae;Son, Chan-Hee;Yun, Myoung-Soo;Lee, Jin-Young;Jo, Tae-Hoon;Seo, Il-Won;Jo, I-Hyun;Roh, Jun-Hyung;Choi, Eun-Ha;Uhm, Han-Sup;Kwon, Gi-Chung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.358-358
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    • 2012
  • The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

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Estimation of Soil Moisture Content in Corn Field Using Microwave Scatterometer Data

  • Kim, Yihyun;Hong, Sukyoung;Lee, Kyoungdo;Na, Sangil;Jung, Gunho
    • Korean Journal of Soil Science and Fertilizer
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    • v.47 no.4
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    • pp.235-241
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    • 2014
  • A ground-based microwave scatterometer has an advantage for monitoring soil moisture content using multi-polarization, multi-frequencies and various incidence angles. In this paper, ground-based multi-frequency (L-, C-, and X-band) polarimetric scatterometer system capable of making observations every 10 min was used to monitor the soil moisture conditions in a corn field over an entire growth cycle. Measurements of volumetric soil moisture were obtained and their relationships to the backscatter observations were examined. Time series of soil moisture content was not corresponding with backscattering coefficient pattern over the whole growth stage, although it increased until early July (Day Of Year, DOY 160). We examined the relationship between the backscattering coefficients from each band and soil moisture content of the field. Backscattering coefficients for all bands were not correlated with soil moisture content when considered over the entire stage ($r{\leq}0.48$). However, L-band Horizontal transmit and Horizontal receive polarization (HH) had a good correlation with soil moisture ($r=0.85^{**}$) when LAI was lower than 2. Prediction equations for soil moisture were developed using the L-HH data. Relation between L-HH and soil moisture shows linear pattern and related with soil moisture content ($R^2=0.77$). Results from this study show that backscattering coefficients of microwave scatterometer appear to be effective to estimate soil moisture content in the field level.

Effect of Annealing Temperature on the Properties of NaNbO3:Eu3+ Phosphor Thin Films Deposited on Quartz Substrates (석영 기판 위에 증착된 NaNbO3:Eu3+ 형광체 박막의 특성에 열처리 온도가 미치는 영향)

  • Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.54 no.2
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    • pp.96-101
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    • 2021
  • NaNbO3:Eu3+ phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering at a growth temperature of 100 ℃, with subsequent annealing at temperatures of 800, 900, and 1000 ℃. The effects of annealing temperature on the structural, morphological, and optical properties of the thin films were investigated. The NaNbO3:Eu3+ sputtering target was synthesized by a solid-state reaction of raw materials Na2CO3, Nb2O5, and Eu2O3. The X-ray diffraction patterns exhibited that the thin films had two mixed phases of NaNbO3 and Eu2O3. Surface morphologies were investigated by using field emission-scanning electron microscopy and indicated that the grains of the thin film annealed at 1000 ℃ showed irregular shapes with an average size of approximately 300 nm. The excitation spectra of Eu3+-doped NaNbO3 thin film consisted of a strong charge transfer band centered at 304 nm in the range of 240-350 nm and two weak peaks at 395 and 462 nm, respectively, resulting from the 7F05L6 and 7F05H2 transitions of Eu3+ ions. The emission spectra under excitation at 304 nm exhibited an intense red band centered at 614 nm and two weak bands at 592 and 681 nm. As the annealing temperature increased from 800 ℃ to 1000 ℃, the intensities of all the emission bands and the band gap energies gradually increased. These results indicate that the higher annealing temperature enhance the luminescent properties of NaNbO3:Eu3+ thin films.