• Journal of the Korea Society of Computer and Information
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• v.5 no.2
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• pp.105-114
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• 2000

In this Paper in order to break with real-time position of signal source which have first dimension motion, the N antenna is arrayed with half-circle, the incident angle of signal source from receiving power pattern to receive at receive antenna is estimated and measured, and the system that measure horizontal moving distance of signal source is designed. Signal source is constructed by 10-20dBm transmitter power which frequency is 10.52GHz of X band, and on horizontally moving the position of signal source. validity of new method is confirmed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.58-59
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• 2011

Microstrip line on dielectric substrate depending on the type of its configuration can be applied to be antenna, communication filters, and resonators. When driving frequency is considered more than X-band, unnecessary signal leakage should be occurred because of flowing through the planar circuit at banding position. So leakage signal will affect other planar circuit, and then EMC problem has to be introduced. In this paper, the affection of banding planar circuit on dielectric substrate was investigated.

• Journal of Advanced Navigation Technology
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• v.8 no.1
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• pp.57-65
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• 2004

In this paper, keeping pace with light weight, pocket-size, lower-price, we design VCO(Voltage Controlled Oscillator) X/Ku band for using at public RD(Radar Detector) to apply to controlled voltage on base in transistor which used as a oscillator, without using varactor diode in part of VCO tuner. As a result of simulation, we conclude VCO could be have 110 MHz by controlled voltage 4.25 V to 4.80 V and show its output 9.63 dBm at operating frequency, 11.46 GHz, and its phase noise -107.2 dBc at 1 MHz offset frequency. So it turned out suitable performance for commercial use.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.633-636
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• 2007

The objective of this study is to measure backscattering coefficients of paddy rice using L, C, X-bands scatterometer system during a rice growth period. The measurement was conducted at an experimental field located in National Institute of Agricultural Science and Technology (NIAST), Suwon, Korea. The rice cultivar was a kind of Japonica type, called Chuchung. The scatterometer system consists of dual-polarimetric square horn antennas, HP8720D vector network analyzer (20MHz ${\sim}$ 20GHz), RF cables, and a personal computer that controls frequency, polarization and data storage. The scatterometer system is calibrated using a calibration kit (3.5mm, 85052D). The backscattering coefficients were calculated by applying radar equation for the measured at incidence angles between $20^{\circ}$ and $60^{\circ}$ for four polarization (HR, VV, HV, VH), respectively, and compared with rice growth data such as plant height, stem number, biomass, dry weight and LAI that were collected at time of each scatterometer measurement simultaneously.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.6
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• pp.889-899
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• 1999

A technique to obtain an exact frequency characteristics of desired targets in radar measurements is presented. The pulsing network composed of two RF switches was installed between the Network Analyzer and the antenna, and the backscattering from a metal sphere was measured at X-band. It is shown that the pulsing effectively eliminated undesired returns from antenna and other circuitry of the systems. The antenna return was suppressed by more than 60 dB, and the signal-to-noise ratio was improved drastically. The pulsed frequency data were processed to extract the responses of the desired target. The result agrees well with the theoretical backscattering characteristics of the sphere. The methods presented here are applicable to RCS measurements in compact ranges, and also to the backscattering measurements of distributed targets outdoors.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.613-624
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• 2011

An MMIC multi-function chip for an X-band active phased array radar system has been designed and fabricated using a 0.5 ${\mu}m$ GaAs p-HEMT commercial process. A digital serial-to-parallel converter is included in this chip in order to reduce the number of the control interface. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a relative compact size of 24 $mm^2$(6 mm${\times}$4 mm) exhibits a transmit/receive gain of 24/15 dB and a P1dB of 21 dBm from 8.5 GHz to 10.5 GHz. The RMS errors for the 64 states of the 6-bit phase shift and attenuation were measured to $7^{\circ}$ and 0.3 dB, respectively over the frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1079-1086
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• 2012

In this paper, X-band 60 W Solid-State Power Amplifier with sequential control circuit and pulse width variation circuit for improve bias of SSPA module was designed. The sequential control circuit operate in regular sequence drain bias switching of GaAs FET. The distortion and efficiency of output signals due to SSPA nonlinear degradation is increased by making operate in regular sequence the drain bias wider than that of RF input signals pulse width if only input signal using pulsed width variation. The GaAs FETs are used for the 60 W SSPA module which is consists of 3-stage modules, pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main power amplifier stage is implemented with the power combiner, as a balanced amplifier structure, to obtain the power greater than 60 W. The designed SSPA modules has 50 dB gain, pulse period 1 msec, pulse width 100 us, 10 % duty cycle and 60 watts output power in the frequency range of 9.2~9.6 GHz and it can be applied to solid-state pulse compression radar using pulse SSPA.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1858-1860
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• 1999

To fabricate superconducting multiplexers with narrow pass band characteristics and reduce the physical size of device, we have designed multiplexer using hair-pin type filters with the center frequency of 13.6 GHz. Multiplexers have been fabricated superconductor(HTS), because It has low surface resistance. The $YBa_2Cu_3O_{7-{\delta}}$(YBCO) films were deposited on MgO substrates$(20{\times}20{\times}0.5mm^3)$ by using pulsed laser deposition and conventional photo-lithographic methods were used to pattern the multiplexer. Epitaxial YBCO films were grown on(100) MgO substrates and showed strongly c_axis orientations observed by X-ray diffraction technique. Superconducting transition temperatures were measured to be about 89K. Simulated results of superconducting multiplexer consisting of hair-pin type filters show the insertion loss of about 1.2dB. The measured frequency response will be compared with the simulated results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.174-177
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• 2009

In this paper, an oscillator using dielectric-rod loaded cavity resonators with HTS(High Temperature Superconductor) end-plates was presented. It was operated at X-band. A two port cavity resonator was incorporated into a basic feedback loop oscillator configuration. A rutile loaded cavity resonator with HTS thin film end-plates was used to provide the quality factor between $10^4$ and $10^6$. A parallel feedback oscillator was constructed with a dielectric loaded cavity resonator, an amplifier, and a directional coupler. At 300 K, the experimental results showed the phase noise of -108 dBc/Hz at a 100 kHz offset frequency. At 26 K, the results was -118.8 dBc/Hz at same offset frequency.

• Journal of Surface Science and Engineering
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• v.56 no.3
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• pp.201-207
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• 2023

Eu³⁺-doped SnO² (SnO²:Eu³⁺) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO₂ and Eu₂Sn₂O₇. The 880 nmthick SnO²:Eu³⁺ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO²:Eu³⁺ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O^2--Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO²:Eu³⁺ thin films showed a main emission peak at 592 nm arising from the ⁵D₀→⁷F₁ transition and a weak 615 nm red band originating from the ⁵D₀→⁷F₂ transition of Eu³⁺. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500-1100 nm. These results indicate that the luminescent intensity of SnO²:Eu³⁺ thin films can be controlled by changing the deposition temperature.