• Title/Summary/Keyword: X-Ray scattering

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The Effect of Layer Spacing Changes in the SmA Phase on Defects Observed in SSFLC Devices.

  • Wang, Chenhui;Bos, Philip J.;Kumar, Satyendra;Wand, Michael;Handschy, Mark
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.193-197
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    • 2004
  • The effect of the temperature dependence of the smectic layer spacing in the smectic-A (SmA) phase on the formation of defects in the ferroelectric smectic-$C^{\ast}$ ($SmC^{\ast}$) phase is investigated with x-ray scattering technique. The study is based on thin parallel-aligned surface stabilized ferroelectric liquid crystal cells with two different alignment conditions, high pretilt $SiO_x$, alignment and low pretilt polyimide films. It is found that defects observed in the $SmC^{\ast}$ phase have much more profound dependence on the layer changes and chevron formation in the SmA phase than in the $SmC^{\ast}$ phase. We find that thermal layer expansion with decreasing temperature in the SmA phase suppresses the formation of defects observed in the SmC phase.

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Growth and Optical Properties of SnSe/BaF2 Single-Crystal Epilayers (SnSe/BaF2 단결정 박막의 성장과 광학적 특성)

  • Lee, II Hoon;Doo, Ha Young
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.209-215
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    • 2002
  • This study investigated the crystal growth, crystalline structure and the basic optical properties of $SnSe/BaF_2$ epilayers. The SnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy(HWE) technique. It was found from the analysis of X-ray diffraction patterns that $SnSe/BaF_2$ epilayer was growing to single crystal with orthorhombic structure oriented [111] along the growth direction. Using Rutherford back scattering(RBS), the atomic ratios of the SnSe was found to be stoichiometric, almost 50 : 50. The best values for the full width at half maximum (FWHM) of the DCXRD was 163 arcsec for SnSe epilarer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $SnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}$(E) of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points in the optical spectra. The real and imaginary parts(${\varepsilon}_1$ and ${\varepsilon}_2$) of the dielectric function ${\varepsilon}$ of SnSe were measured. These data are analyzed using a theoretical model known as the model dielectric function(MDF). The optical constants related to dielectric function such as the complex refractive index(n*-n+ik), absorption coefficient (${\alpha}$) and normal- incidence reflectivity (R) are also presented for $SnSe/BaF_2$.

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The Study of Forward Scattering Dose according to the Thickness of Filter in General Radiography (일반촬영 검사에서 필터 두께 증가에 따른 전방산란율에 관한 연구)

  • Choi, Il Hong;Kim, Kyo Tae;Heo, Ye Ji;Kang, Sang Sik;Noh, Si Cheol;Jung, Bong Jae;Nam, Sang Hee;Park, Ji Koon
    • Journal of the Korean Society of Radiology
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    • v.9 no.7
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    • pp.445-448
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    • 2015
  • Recently there has been increasing interest in the filter to reduce the proportion of low-energy photons in the polychromatic X-ray, affect the quality of the image quality by X-ray hardening effect is a situation that has been overlooked. In this study, by evaluating the change in FSR based on the filter and it was quantitatively discuss scatter dose affecting the medical image quality. The results of the experiment, as the thickness of the filter is increased, up to 13.9%p, that tends to FSR increases appearance were evaluated. Based on these results, in compliance with the thickness of the filter that has been recommended in KS standard, even while reducing the radiation dose of the patient, in addition to the noise to about 1%p within the FSR only medical image the contribution to it is conceivable. Therefore, even while reducing radiation dose of the patient, in order to improve the quality of the medical image, the use of appropriate filter is considered important.

XAS Studies of Ion Irradaited MgO Thin Films

  • Suk, Jae-Kwon;Gautam, Sanjeev;Song, Jin-Ho;Lee, Jae-Yong;Kim, Jae-Yeoul;Kim, Joon-Kon;Song, Jong-Han;Chae, Keun-Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.312-312
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    • 2012
  • Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.

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Characterization of ${Al_x}{Ga_{1-x}N}$ Thin Film Grown by MOCVD (MOCVD 법으로 성장시킨 ${Al_x}{Ga_{1-x}N}$ 박막의 특성분석)

  • Kim, Seong-Ik;Kim, Seok-Bong;Park, Su-Yeong;Lee, Seok-Heon;Lee, Jeong-Hui;Heo, Jung-Su
    • Korean Journal of Materials Research
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    • v.10 no.10
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    • pp.691-697
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    • 2000
  • $Al_xGa_{1-x}N$ thin layers are promising materials for optical devices in the UV regions. $Al_xGa_{1-x}N$ thin layers w were grown on sapphire substrates by metalorgaruc chemical vapor deposition (MOCVD). The molar Al fraction and crystallinity of layers were deduced from synchrotron x-ray scattering experiment. Surface morphology were investigated using SEM and SPM. $Al_xGa_{1-x}N$ layers crystallinity were related with undoped GaN crystallinity. The Al mole fraction of $Al_xGa_{1-x}N$ layers affect the surface morphology of $Al_xGa_{1-x}N$ layers. The surface morphology was rough­e ened and the cracks were obse$\pi$ed by increasing the Al mole fractions.

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EFFECTS OF WAVE-PARTICLE INTERACTIONS ON DIFFUSIVE SHOCK ACCELERATION AT SUPERNOVA REMNANTS

  • Kang, Hyesung
    • Journal of The Korean Astronomical Society
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    • v.46 no.1
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    • pp.49-63
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    • 2013
  • Nonthermal radiation from supernova remnants (SNRs) provides observational evidence and constraints on the diffusive shock acceleration (DSA) hypothesis for the origins of Galactic cosmic rays (CRs). Recently it has been recognized that a variety of plasma wave-particle interactions operate at astrophysical shocks and the detailed outcomes of DSA are governed by their complex and nonlinear interrelationships. Here we calculate the energy spectra of CR protons and electrons accelerated at Type Ia SNRs, using time-dependent, DSA simulations with phenomenological models for magnetic field amplification due to CR streaming instabilities, Alf$\acute{e}$enic drift, and free escape boundary. We show that, if scattering centers drift with the Alf$\acute{e}$en speed in the amplified magnetic fields, the CR energy spectrum is steepened and the acceleration efficiency is significantly reduced at strong CR modified SNR shocks. Even with fast Afv$\acute{e}$nic drift, DSA can still be efficient enough to develop a substantial shock precursor due to CR pressure feedback and convert about 20-30% of the SN explosion energy into CRs. Since the high energy end of the CR proton spectrum is composed of the particles that are injected in the early stages, in order to predict nonthermal emissions, especially in X-ray and ${\gamma}-ray$ bands, it is important to follow the time dependent evolution of the shock dynamics, CR injection process, magnetic field amplification, and particle escape. Thus it is crucial to understand the details of these plasma interactions associated with collisionless shocks in successful modeling of nonlinear DSA.

ENERGY SPECTRUM OF NONTHERMAL ELECTRONS ACCELERATED AT A PLANE SHOCK

  • Kang, Hye-Sung
    • Journal of The Korean Astronomical Society
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    • v.44 no.2
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    • pp.49-58
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    • 2011
  • We calculate the energy spectra of cosmic ray (CR) protons and electrons at a plane shock with quasi-parallel magnetic fields, using time-dependent, diffusive shock acceleration (DSA) simulations, including energy losses via synchrotron emission and Inverse Compton (IC) scattering. A thermal leakage injection model and a Bohm type diffusion coefficient are adopted. The electron spectrum at the shock becomes steady after the DSA energy gains balance the synchrotron/IC losses, and it cuts off at the equilibrium momentum $p_{eq}$. In the postshock region the cutoff momentum of the electron spectrum decreases with the distance from the shock due to the energy losses and the thickness of the spatial distribution of electrons scales as $p^{-1}$. Thus the slope of the downstream integrated spectrum steepens by one power of p for $p_{br}$ < p < $p_{eq}$, where the break momentum decreases with the shock age as $p_{br}\;{\infty}\;t^{-1}$. In a CR modified shock, both the proton and electron spectrum exhibit a concave curvature and deviate from the canonical test-particle power-law, and the upstream integrated electron spectrum could dominate over the downstream integrated spectrum near the cutoff momentum. Thus the spectral shape near the cutoff of X-ray synchrotron emission could reveal a signature of nonlinear DSA.

Epitaxy of Si and Si1-xGex(001) by ultrahigh vacuum ion-beam sputter deposition

  • Lee, N. E.;Greene, J. E.
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.2
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    • pp.107-117
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    • 1998
  • Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

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Detecting Incipient Caries Using Front-illuminated Infrared Light Scattering Imaging

  • Kim, Ji-Young;Ro, Jung-Hoon;Jeon, Gye-Rok;Kim, Jin-Bom;Ye, Soo-Young
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.6
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    • pp.310-316
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    • 2012
  • A new method for early caries diagnosis was proposed and tested through a home-made optical examination system that used quantitative light fluorescence (QLF) and digital imaging fiber optic transillumination (FOTI) (DIFOTI), with light sources across a wide spectral range, from 350 nm to 1,000 nm. The front-illuminated infrared light scattering image (FIR) showed similar diagnostic abilities to that of DIFOTI. The FIR method was invented based on the observation that caries lesions lose the high transmittance and low scattering properties of benign enamel tissue. There are various methods for the early diagnosis of caries, such as visual examination, exploration, X-ray radiography, QLF, FOTI, and infrared fluorescence (diagnodent). Among them, methods based on optical properties are regarded as having the most potential. A comparative study was performed between the FOTI, QLF, diagnodent, optical coherence tomography, and FIR scattering image methods, using 20 extracted teeth samples with early caries. A scale of lesion measurement based on optical image contrast was proposed. The statistical analysis showed a significant correlation between the DIFOTI and FIR methods (r = 0.35, p < 0.05). However, the QLF and diagnodent methods showed little association with FIR images, as they have different detection principles as compared with FIR. Tomographic images obtained by OCT, using 1,330 nm super luminescent LED as a gold standard of tooth structure, verified that the FOTI and FIR results correctly represented the lack of homogeneity in dental tissue. The newly proposed FIR method attained similar diagnostic results to those of FOTI, but with an easier approach.

Morphology and Crystallization in Mixtures of Poly(methyl methacrylate)-Poly(pentafluorostyrene)-Poly(methyl methacrylate) Triblock Copolymer and Poly(vinylidene fluoride)

  • Kim, Geon-Seok;Kang, Min-Sung;Choi, Mi-Ju;Kwon, Yong-Ku;Lee, Kwang-Hee
    • Macromolecular Research
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    • v.17 no.10
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    • pp.757-762
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    • 2009
  • The micro domain structures and crystallization behavior of the binary blends of poly(methyl methacrylate)-b-poly(pentafluorostyrene)-b-poly(methyl methacrylate) (PMMA-PPFS-PMMA) triblock copolymer with a low molecular weight poly(vinylidene fluoride) (PVDF) were investigated by small-angle X-ray scattering (SAXS), small-angle light scattering (SALS), transmission electron microscopy (TEM), optical microscopy, and differential scanning calorimetry (DSC). A symmetric, PMMA-PPFS-PMMA triblock copolymer with a PPFS weight fraction of 33% was blended with PVDF in N,N-dimethylacetamide (DMAc). In the wide range of PVDF concentration between 10.0 and 30.0 wt%, PVDF was completely incorporated within the PMMA micro domains of PMMA-PPFS-PMMA without further phase separation on a micrometer scale. The addition of PVDF altered the phase morphology of PMMA-PPFS-PMMA from well-defined lamellar to disordered. The crystallization of PVDF significantly disturbed the domain structure of PMMA-PPFS-PMMA in the blends, resulting in a poorly-ordered morphology. PVDF displayed unique crystallization behavior as a result of the space constraints imposed by the domain structure of PMMA-PPFS-PMMA. The pre-existing microdomain structures restricted the lamellar orientation and favored a random arrangement of lamellar crystallites.