• Title/Summary/Keyword: X-Ray scattering

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Characterization of CdSe Thin Film Using Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeong, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.81-86
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    • 1993
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Preclinical Prototype Development of a Microwave Tomography System for Breast Cancer Detection

  • Son, Seong-Ho;Simonov, Nikolai;Kim, Hyuk-Je;Lee, Jong-Moon;Jeon, Soon-Ik
    • ETRI Journal
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    • v.32 no.6
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    • pp.901-910
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    • 2010
  • As a supplement to X-ray mammography, microwave imaging is a new and promising technique for breast cancer detection. Through solving the nonlinear inverse scattering problem, microwave tomography (MT) creates images from measured signals using antennas. In this paper, we describe a developed MT system and an iterative Gauss-Newton algorithm. At each iteration, this algorithm determines the updated values by solving the set of normal equations using Tikhonov regularization. Some examples of successful image reconstruction are presented.

Crystallization Behavior of Poly(ethylene terephthalate)/Ethylene-Methyl acrylate-Glycidyl methacrylate Copolymer Blend (폴리에틸렌테레프탈레이트/에틸렌-메틸아크릴레이트-글리시딜 메타크릴레이트 공중합물 블렌드의 결정화 거동)

  • 성상엽;이종관;이광희;진병석
    • Polymer(Korea)
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    • v.25 no.6
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    • pp.848-854
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    • 2001
  • The crystallization behavior of poly (ethylene terephthalate) (PET) /ethylene-methyl acrylate-glycidyl methacrylate copolymer (E-MeA-GMA) blend was studied. The extent of reaction and the reaction rate between PET and E-MeA-GMA were measured with torque rheometer, FT-IR and SEM. The effects of the grafting reaction on the crystallization behavior were investigated with DSC and time-resolved light scattering (TR-LS) techniques. The morphological change at the lamellar level was also examined by using a small angle X-ray scattering (SAXS) method.

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Synthesis of Diamond films for Radiation Detector (방사선 검출기용 다이아몬드 막의 합성)

  • 박상현;김정달;박재윤;김경환;구효근;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.366-369
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    • 1999
  • Synthetic diamond films have been deposited on the silicon(100) surface and molybdenum substrates using an microwave plasma enhanced vapor deposition (MWPECVD) method. The effect of deposition time, surface morphology, X-ray diffraction pattrm, infrared transmittance and Raman Scattering have been studied, The diamond film deposited on Mo substrate for (100) hours at 40 torr H$_2$-CH$_4$O$_2$ gas system have been shown 1${\mu}{\textrm}{m}$/h of growth rate and good crystallization

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A Study on the Characteristics of High Energy Nitrogen ion Implanted CdS Thin Films (고에너지 질소 이온 주입된 CdS 박막 특성에 관한 연구)

  • 이재형;홍석주;양계준
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.4
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    • pp.712-718
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    • 2003
  • The effects of nitrogen ion implantation on vacuum evaporated cadmium sulphide (CdS) thin films were investigated by X-ray diffraction, optical transmittance spectra, and Raman scattering studies. The as-deposited CdS films have a hexagonal structure with preferential (0 0 2) orientation. Formation of Cd metallic clusters was observed in ion implanted films from the XRD patterns. The band gap of N+ implanted films decreased, whereas the optical absorption coefficient values increased with the increase of implantation dose. The Raman peak position appeared at 299 cm-1 and the FWHM increased with the ion dose. A decrease in the area of Raman peak of CdS Al(LO) mode is seen on implantation.

A GRADIENT-T SZE

  • HATTORI MAKOTO;OKABE NOBUHIRO
    • Journal of The Korean Astronomical Society
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    • v.37 no.5
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    • pp.543-546
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    • 2004
  • The inverse Compton scattering of the cosmic microwave background (CMB) radiation with electrons in the intracluster medium which has a temperature gradient, was examined by the third-order perturbation theory of the Compton scattering. A new type of the spectrum distortion of the CMB was found and named as gradient T Sunyaev-Zel'dovich effect (gradT SZE). The spectrum has an universal shape. There is a zero distortion point, the cross over frequency, at 326GHz. When the hotter region locates closer to an observer, the intensity becomes brighter than the CMB in the frequency region lower than the cross over frequency and fainter than the CMB in the frequency region higher than the cross over frequency. When the cooler region locates closer to an observer, the distorted part of the spectrum has an opposite sign to the above case. The amplitude of the spectrum distortion does not de-pend on the electron density and depends on the heat conductivity and the total temperature variation along a line of sight. Therefore, the gradT SZE provides an unique opportunity to measure thermally nonequilibrium electron momentum distribution function in the ICM and combined with the X-ray measurements of the electron temperature distribution provides an opportunity of direct measurement of the heat conductivity in the ICM.

Characterization of 3C-SiC grown on Si(100) water (Si(100) 기판상에 성장된 3C-SiC의 특성)

  • Na, Kyung-Il;Chung, Yun-Sik;Ryu, Ji-Goo;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.533-536
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    • 2001
  • Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

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Characterization of 3C-SiC grown on Si(100) wafer (Si(100) 기판상에 성장된 3C-SiC의 특성)

  • 나경일;정연식;류지구;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.533-536
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    • 2001
  • Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

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Phase Behavior of a PEO-PPO-PEO Triblock Copolymer in Aqueous Solutions: Two Gelation Mechanisms

  • Park, Moon-Jeong;Kookheon Char;Kim, Hong-Doo;Lee, Chang-Hee;Seong, Baek-Seok;Han, Young-Soo
    • Macromolecular Research
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    • v.10 no.6
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    • pp.325-331
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    • 2002
  • Phase behavior of a PEO-PPO-PEO (Pluronic P103) triblock copolymer in water is investigated using small-angle neutron scattering (SANS), small-angle X-ray scattering (SAXS), dynamic light scattering (DLS) and rheology. Pluronic P103 shows apparent two gel states in different temperature regions. The first sol-to-gel transition at a lower temperature (i.e., the hard gel I state) turns out to be the hexagonal microphase as evidenced by the combined SANS and SAXS and the frequency dependence of both G′ and G" in rheology. In contrast to the hard gel I, the second sol-to-gel transition (i. e., the hard gel II state) at a higher temperature represents the block copolymer micelles in somewhat disordered state rather than the ordered state seen in the hard gel I. Moreover, turbidity change depending only on the temperature with four distinct regions is observed and the large aggregates with size larger than 5,000 nm are detected with DLS in the turbid solution region. Based upon the present study, two different gelation mechanisms for aqueous PEO-PPO-PEO triblock copolymer solutions are proposed.