• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.383-388
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• 2019

High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.

• Investigative Magnetic Resonance Imaging
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• v.14 no.1
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• pp.10-20
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• 2010

Purpose : Recently, the Recon Challenge at the 2009 ISMRM workshop on Data Sampling and Image Reconstruction at Sedona, Arizona was held to evaluate feasibility of highly accelerated acquisition of time resolved contrast enhanced MR angiography. This paper provides the step-by-step description of the winning results of k-t FOCUSS in this competition. Materials and Methods : In previous works, we proved that k-t FOCUSS algorithm successfully solves the compressed sensing problem even for less sparse cardiac cine applications. Therefore, using k-t FOCUSS, very accurate time resolved contrast enhanced MR angiography can be reconstructed. Accelerated radial trajectory data were synthetized from X-ray cerebral angiography images and provided by the organizing committee, and radiologists double blindly evaluated each reconstruction result with respect to the ground-truth data. Results : The reconstructed results at various acceleration factors demonstrate that each components of compressed sensing, such as sparsifying transform and incoherent sampling patterns, etc can have profound effects on the final reconstruction results. Conclusion : From reconstructed results, we see that the compressed sensing dynamic MR imaging algorithm, k-t FOCUSS enables high resolution time resolved contrast enhanced MR angiography.

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.5
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• pp.599-610
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• 2005

Purpose: The success of the bonding between electroformed gold and ceramic is dependent on the surface treatment of the pure gold coping. The purpose of this study was to evaluate the bonding strength between the electroformed gold and ceramic with varying surface treatment. Materials and methods: A total of 32 disks,8 were using conventional ceramometal alloy, 24 were using electroforming technique as recommended by manufacturer, were prepared. 24 electroformed disks were divided 3 groups according to surface treatment, i.e. 50 microns aluminium oxide sandblasting(GES-Sand), gold bonder treatment(GES-Bond) and $Rocatec^{TM}$ system(GES-Rocatec). For control group of conventional alloy 50 microns aluminium oxide treatment was done(V-Supragold). Energy dispersive x-ray analysis and scanning electron microscope image were observed. Using universal testing machine, shear bond strength and bonding failure mode at metal-porcelain interface were measured. Results and Conclusion: The following conclusions were drawn: 1. In the energy dispersive x-ray analysis, the Au was main component in electroformed gold(99.9wt%). After surface treatment, a little amount of $Al_2O_3(2.4wt%)$ were found in GES-Sand, and $SiO_2(4wt%)$ in GES-Bond. In GES-Rocatec, however, a large amount of $SiO_2(17.4wt%)$ were found. 2. In the scanning electron microscopy, similar pattern of surface irregu larities were observed in V-Supragold and GES-Sand. In GES-Bond, surface irregularities were increased and globular ceramic particles were observed. In GES-Rocatec, a large amount of silica particles attached to metal surface with increased surface irregularities were observed. 3. The mean shear bond strength values(MPa) in order were $22.9{\pm}3.7(V-Supragold),\;22.1{\pm}3.8(GES-Bond),\;20.1{\pm}2.8(GES-Rocatec)\;and\;13.0{\pm}1.4(GES-Sand)$. There was no significant difference between V-Supragold, GES-Bond, and GES-Rocatec. (P>0.05) 4. Most bonding failures modes were adhesive type in GES-Sand. However, in V-Supragold, GES-Bond and GES-Rocatec, cohesive and combination failures were commonly observed. From the result, with proper surface treatment method electroformed gold may have enough strength compare to conventional ceramometal alloy.

• Restorative Dentistry and Endodontics
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• v.17 no.2
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• pp.307-330
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• 1992

The aim of this study was to investigate the physical properties of visible light curing Glass Ionomer cement for restorative esthetic filling. The control group was the autopolymerizing GC Fuji II Glass Ionomer cement (2.2: 1 P/L ratio) and the experimental groups were made by following procedure. To induce the polymerization by visible light, the powder of GC Fuji II GI cement and the liquid of Vitrabond for base & liner were mixed in an amalgam capsule with 2.5:1, 3.0:1, 3.5:1 P/L ratio (% wt/wt). After fabrication of specimens, compressive strength, fracture toughness ($K_{IC}$) Scanning Electron Microscope and X-ray Diffraction, water-leachable content, marginal leakage and surface roughness were studied. The results were as follows: 1. Only experimental No. 1 group (visible light curing) showed less compressive strength than control group 1 hour after curing. Strength was increased with aging in all groups, so the compressive strength of light curing groups was no less than that of autopolymerizing group after 3 weeks. 2. Experimental No.3 group (visible light curing) was inferior to No.2 group (visible light curing) in fracture resistance but light curing groups were more resistant to fracture than autopolymerizing group and showed ductile fracture pattern as compared with the brittle fracture pattern of autopolymerizing group. 3. From scanning electron microscopic image, various sized unreacted powder particles, surrounded by silica gel, were embedded in polysalt matrix. Light curing groups showed little crack and more dense unreacted particles than autopolymerizing group. 4. From X-ray diffraction analysis, GC Fuji II Glass Ionomer cement powder and all groups showed glassy appearance but light curing groups seemed to be more intensive in crystaline than autopolymerizing group. S. The most significant dissolution was shown in early setting period in all group. Light curing groups were dissolved less than autopolymerizing group. 6. Marginal leakage was not different significantly in case of cavity margin composed of same tooth structure (ex. only enamel margin, only dentin margin) but much more leakage was shown in dentin/cementum margin than enamel margin. In only case of only enamel margin, light curing groups were superior to autopolymerizing group. 7. All groups showed relatively smooth surface, which irregularity was less than $1{\mu}m$. Light curing groups were smoother than autopolymerizing group.

• The Korean Journal of Pain
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• v.24 no.4
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• pp.199-204
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• 2011

Background: Although many clinicians know about the reducing effects of the pulsed and low-dose modes for fluoroscopic radiation when performing interventional procedures, few studies have quantified the reduction of radiation-absorbed doses (RADs). The aim of this study is to compare how much the RADs from a fluoroscopy are reduced according to the C-arm fluoroscopic modes used. Methods: We measured the RADs in the C-arm fluoroscopic modes including 'conventional mode', 'pulsed mode', 'low-dose mode', and 'pulsed + low-dose mode'. Clinical imaging conditions were simulated using a lead apron instead of a patient. According to each mode, one experimenter radiographed the lead apron, which was on the table, consecutively 5 times on the AP views. We regarded this as one set and a total of 10 sets were done according to each mode. Cumulative exposure time, RADs, peak X-ray energy, and current, which were viewed on the monitor, were recorded. Results: Pulsed, low-dose, and pulsed + low-dose modes showed significantly decreased RADs by 32%, 57%, and 83% compared to the conventional mode. The mean cumulative exposure time was significantly lower in the pulsed and pulsed + low-dose modes than in the conventional mode. All modes had pretty much the same peak X-ray energy. The mean current was significantly lower in the low-dose and pulsed + low-dose modes than in the conventional mode. Conclusions: The use of the pulsed and low-dose modes together significantly reduced the RADs compared to the conventional mode. Therefore, the proper use of the fluoroscopy and its C-arm modes will reduce the radiation exposure of patients and clinicians.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.11-17
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• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.1
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• pp.97-101
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• 2016

ZnO has nanostructured material because of unique properties suitable for various applications. Amongst all chemical and physics methods of synthesis of ZnO nanostructure, the hydrothermal method is attractive for its simplicity and environment friendly condition. Nanostructure ZnO thin films have been successfully synthesized on fluorine doped tin oxide (FTO) substrate using hydrothermal method. A possible growth mechanism of the various nanostructures ZnO is discussed in schematics. The prepared materials were characterized by standard analytical techniques, i.e., X-ray diffraction (XRD) and Field-emission scanning electron microscopy (SEM). The XRD study showed that the obtained ZnO nanostructure thin films are in crystalline nature with hexagonal wurtzite phase. The SEM image shows substrate surface covered with nanostructure ZnO nanrod. The UV-vis absorption spectrum of the synthesized nanostructure ZnO shows a strong excitonic absorption band at 365 nm which indicate formation nanostructure ZnO thin film. Photoluminescence spectra illustrated two emission peaks, with the first one at 424 nm due to the band edge emission of ZnO and the second broad peak centered around 500 nm possibly due to oxygen vacancies in nanostructure ZnO. The Raman measurements peaks observed at $325cm^{-1}$, $418cm^{-1}$, $518cm^{-1}$ and $584cm^{-1}$ indicated that nanostrusture ZnO thin film is high crystalline quality. We trust that nanostructure ZnO material can be effectively will be used as a highly active and stable phtocatalysis application.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Journal of radiological science and technology
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• v.31 no.3
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• pp.223-228
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• 2008

The most critical point in the medical use of radiation is to minimize the patient's entrance dose while maintaining the diagnostic function. Low-energy photons (long wave X-ray) among diagnostic X-rays are unnecessary because they are mostly absorbed and contribute the increase of patient's entrance dose. The most effective method to eliminate the low-energy photons is to use the filtering plate. The experiments were performed by observing the image quality. The skin entrance dose was 0.3 mmCu (copper) filter. A total of 80 images were prepared as two sets of 40 cuts. In the first set (of 40 cuts), 20 cuts were prepared for the non-filter set and another 20 cuts for the Cu filter of signal + noise image set. In the second set of 40 cuts, 20 cuts were prepared for the non-filter set and another 20 cuts for the Cu filter of non-signal image (noisy image) with random location of diameter 4 mm and 3 mm thickness of acryl disc for ROC signal at the chest phantom. P(S/s) and P(S/n) were calculated and the ROC curve was described in terms of sensitivity and specificity. Accuracy were evaluated after reading by five radiologists. The number of optically observable lesions was counted through ANSI chest phantom and contrast-detail phantom by recommendation of AAPM when non-filter or Cu filter was used, and the skin entrance dose was also measured for both conditions. As the result of the study, when the Cu filter was applied, favorable outcomes were observed on, the ROC Curve was located on the upper left area, sensitivity, accuracy and the number of CD phantom lesions were reasonable. Furthermore, if skin entrance dose was reduced, the use of additional filtration may be required to be considered in many other cases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.