• Title/Summary/Keyword: X-BAND

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Construction of X-band automatic radar scatterometer measurement system and monitoring of rice growth (X-밴드 레이더 산란계 자동 측정시스템 구축과 벼 생육 모니터링)

  • Kim, Yi-Hyun;Hong, Suk-Young;Lee, Hoon-Yol
    • Korean Journal of Soil Science and Fertilizer
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    • v.43 no.3
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    • pp.374-383
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    • 2010
  • Microwave radar can penetrate cloud cover regardless of weather conditions and can be used day and night. Especially a ground-based polarimetric scatterometer has advantages of monitoring crop conditions continuously with full polarization and different frequencies. Kim et al. (2009) have measured backscattering coefficients of paddy rice using L-, C-, X-band scatterometer system with full polarization and various angles during the rice growth period and have revealed the necessity of near-continuous automatic measurement to eliminate the difficulties, inaccuracy and sparseness of data acquisitions arising from manual operation of the system. In this study, we constructed an X-band automatic scatterometer system, analyzed scattering characteristics of paddy rice from X-band scatterometer data and estimated rice growth parameter using backscattering coefficients in X-band. The system was installed inside a shelter in an experimental paddy field at the National Academy of Agricultural Science (NAAS) before rice transplanting. The scatterometer system consists of X-band antennas, HP8720D vector network analyzer, RF cables and personal computer that controls frequency, polarization and data storage. This system using automatically measures fully-polarimetric backscattering coefficients of rice crop every 10 minutes. The backscattering coefficients were calculated from the measured data at a fixed incidence angle of $45^{\circ}$ and with full polarization (HH, VV, HV, VH) by applying the radar equation and compared with rice growth data such as plant height, stem number, fresh dry weight and Leaf Area Index (LAI) that were collected at the same time of each rice growth parameter. We examined the temporal behaviour of the backscattering coefficients of the rice crop at X-band during rice growth period. The HH-, VV-polarization backscattering coefficients steadily increased toward panicle initiation stage, thereafter decreased and again increased in early-September. We analyzed the relationships between backscattering coefficients in X-band and plant parameters and predicted the rice growth parameters using backscattering coefficients. It was confirmed that X-band is sensitive to grain maturity at near harvesting season.

Exploring Thermoelectric Transport Properties and Band Parameters of n-Type Bi2-xSbxTe3 Compounds Using the Single Parabolic Band Model

  • Linh Ba Vu;Soo-ho Jung;Jinhee Bae;Jong Min Park;Kyung Tae Kim;Injoon Son;Seungki Jo
    • Journal of Powder Materials
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    • v.31 no.2
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    • pp.119-125
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    • 2024
  • The n-type Bi2-xSbxTe3 compounds have been of great interest due to its potential to achieve a high thermoelectric performance, comparable to that of p-type Bi2-xSbxTe3. However, a comprehensive understanding on the thermoelectric properties remains lacking. Here, we investigate the thermoelectric transport properties and band characteristics of n-type Bi2-xSbxTe3 (x = 0.1 - 1.1) based on experimental and theoretical considerations. We find that the higher power factor at lower Sb content results from the optimized balance between the density of state effective mass and nondegenerate mobility. Additionally, a higher carrier concentration at lower x suppresses bipolar conduction, thereby reducing thermal conductivity at elevated temperatures. Consequently, the highest zT of ~ 0.5 is observed at 450 K for x = 0.1 and, according to the single parabolic band model, it could be further improved by ~70 % through carrier concentration tuning.

Development of the Multi Band Transceiver for Multi-Channel SAR (다채널 영상레이다를 위한 다중대역 송수신기 개발)

  • Kim, Jae-Min;Lim, Jae-Hwan;Park, Ji-Woong;Jin, Hyeong-Seok;Lee, Hyeon-Cheol
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.2
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    • pp.97-104
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    • 2017
  • In this paper, we designed and fabricated the multi band Transceiver Assembly(TCA) for the Multi Channel Synthetic Aperture Radar(MCSAR) containing C-band, X-band, Ku-band and we researched to verify electrical performance of TCA. The transceiver consists of transmitters, receivers, signal selection modules for each band, and stability oscillator, frequency synthesizer, controller, power distributor. The transceiver has a receive path selection and bandwidth selection functions in accordance with the operating mode. And the transceiver can transmit and receive all three bands simultaneously, each band has a bandwidth of up to 300 MHz. Final transmission output of transceiver for each band is over 20 dBm to be suitable for driving the T/R module. Receiver bandwidth is selected according to the required function and receiver gain has approximately C-band 52 dB, X-band 50 dB, Ku-band 60 dB, the maximum noise figure of Ku-band V polarization is 4.28 dB in the whole band H, V polarization. As a result of the electrical performance test, a multi-band TCA is satisfied the property requirements of the MCSAR.

Design and Implementation of Local Oscillator for X-Band Radar (X-대역 레이더용 국부 발진기의 설계 및 구현)

  • Kim, Gi-Rae
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.11
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    • pp.1215-1220
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    • 2014
  • In this paper, a local oscillator for X-band radar system is designed and fabricated with GaAs MESFET. GaAs MESFET is good for microwave oscillators because of very low noise figure and high electron mobility. Oscillator design methods in this paper are used the characteristic of negative resistance of active component and impedance matching technique without RF resonator. So, oscillator is designed in compact size because space of RF resonator is reduced and can be applied MMIC technique. Designed oscillator has characteristic of the output power of 2.30 dBm and center frequency of 10.545GHz.

The Adsorption of Alkyl Aldehydes on Cations Supported by Layer Silicate. Complex Formation Theory (Layer Silicate에 지지된 양이온상에서의 알킬알데히드의 흡착기구. 착물형성 이론)

  • Kim Jong Taik;Sohn Jong Rack
    • Journal of the Korean Chemical Society
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    • v.18 no.3
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    • pp.180-188
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    • 1974
  • Adsorption mechanism of alkyl aldehydes, acetaldehyde, acrolein, and crotonaldehyde on cations supported by layer silicates was studied by means of IR spectroscopy and X-ray. An analysis of four characteristic split bands in the region of $1720∼1580㎝^{-1}$ was made. The carbonyl stretching band which shifted about $130㎝^{-1}$ to lower frequencies was observed only for $Ni^{2+}$ and Al^{3+}$ but slightly with $Ca^{2+}$ at high sample temperature and was attributed to >C=O…M complex formation. A sharp band which appeared as a shoulder at 1722 for acetaldehyde and 1690 for acrolein and crotonaldehyde was responsible for the interaction of carbonyl with surface hydroxyl. The second broad band which appeared at about 1710~1660 was responsible for hydrogen bonding between carbonyl oxygen and cationic hydroxyl group. The third band which appeared at about 1640~1660 was attributed to induced >C=C< double bond due to the strong carbonyl interaction. This was supported by the interlamellar spacings obtained by X-ray diffractometry.

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Development of Low-Power Electronic Scanner for 17GHz Band (17GHz 대역의 저출력 Electronic Scanner 개발)

  • Jeong, Seon-Jae;Jeon, Sung-Ho;Lee, Young-Sub;Lee, Kwang-Keun;Yim, Jae-Hong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.4
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    • pp.445-452
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    • 2019
  • Today, most detection systems used in the marine industry are the majority of devices operating in the high-power X-band bands. While most detection systems using these frequencies in the X-Band band can expect a wide range of detection performance, they are not suitable for precision detection and have the limitation that they are large and heavy. In this paper, we designed, fabricated and tested an electronic scanner capable of detecting not only the surrounding objects but also the ocean waves at a low power of less than 2W in the 17GHz frequency band of the Ku-Band. A high-performance patch array antenna and Doppler effect were utilized to obtain sufficient detection performance even at low power. As a result of the test, it was confirmed that the performance was sufficiently valuable.

High power X-band SSPA Design using Gysel Power Combiner (Gysel 전력결합기를 이용한 고출력 X-band SSPA 설계)

  • Lee, Sang-Rok;Lim, Eun-Jae;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.4
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    • pp.425-432
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    • 2014
  • Necessity of compact X-band solid-state weather radar is required to provide weather data, which generate locally in a lot of Korea's mountainous area, rather than tube-type radar. Solid State Power Amplifier (SSPA) for using Dual-polarization method in weather radar is able to obtain desired high output by combining many low output power devices in parallel. Thus, Power combiner applying to high-output power amplifier has disadvantages such as path loss, ballast resistance problem by high frequency and high power, heat release. Therefore, In this paper we demonstrated the excellence of isolation, which is the result from modified Gysel power combiner. As a result, we designed X-band 250W solid state power amplifier with peak power 54dBm, 25% power efficiency for weather radar.

Design and Fabrication of Voltage Control Oscillator at X-band using Dielectric Resonator (유전체 공진기를 이용한 X-band 전압제어 발진기 설계 및 제작)

  • Han, Sok-Kyun;Choi, Byung-Ha
    • Journal of Navigation and Port Research
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    • v.27 no.5
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    • pp.513-517
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    • 2003
  • In this paper, a VCDRO(Voltage Control Dielectric Resonator Oscillator} applied to X-band as stable source is implementea and constructed with a MESFET for low noise, a dielectric resonator of high frequency selectivity and high Q varactor diode to obtain a good phase noise performance and stable sweep characteristics. The designed circuits is simulated through the harmonic balance simulation technique to provide the optimum performance. The measured results of a fabricated VCDRO show that output is 2.22dBm at 12.05GHz. harmonic suppression -30dBc. phase noise -130dBc at 100kHz offset. and sweep range of varactor diode $\pm$18.7MHz. respectively. This oscillator will be available to X-band application.

The Magnetic Properties of Polycrystalline Yttrium Iron Garnet by Ferromagnetic Resonance (강자성공명 현상을 이용한 YIG의 자기적 특성 연구)

  • 김기현;이대하;김영호
    • Journal of the Korean Magnetics Society
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    • v.9 no.1
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    • pp.7-16
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    • 1999
  • Stoichiometric and nonstoichiometric $Y_{3-x}Fe_{5+x}O_{12})$ polycrystalline samples (x=0.00, 0.05, 0.10, 0.30, -0.05, -0.10, -0.30) were prepared by solid state reaction method. The magnetic properties of the sample were investigated by FMR (ferromagnetic resonance) technique at microwave frequency 5.11 GHz (G-band) and 23.39 GHz (K-band) respectively. The spectroscopic splitting factor g were estimated to be 2.04~2.35 from the derivative absorption lines. As the samples became yttrium $(Y^{3+})$ excess and iron $(Fe^{3+})$ excess, Magnetizations were decreased. But resonance linewidth were increased. To investigate the anisotropy, the angular dependence of resonance magnetic fields were measured. Angular dependence of effective magnetizations were measured by FMR from 77 K to 300 K at K-band microwave frequency (23.39 GHz) and the saturation magnetizations were measured by VSM. The Bloch coefficients B and C were determined by fitting. $M_{eff}(0)$ was obtained by the extrapolation from 80 K. From this result, the spin wave stiffness constant D $(about\; 162~206 \;eV{\AA}^2)$and average square range of exchange interaction $$$(about \;5.84~12.13\;{\AA}^2)$ were determined.

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Symmetry of GaAsN Conduction-band Minimum: Resonant Raman Scattering Study (GaAsN 전도띠 바닥의 대칭성: 공명라만산란연구)

  • Seong M.J.
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.162-167
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    • 2006
  • The symmetry of the conduction-band minimum of $GaAs_{1-x}N_{x}$ is probed by performing resonant Raman scattering (RRS) on thin layers of $GaAs_{1-x}N_{x}(x{\leq}0.7)$ epitaxially grown on Ge substrates. Strong resonance enhancement of the LO(longitudinal optical)-phonon Raman intensity is observed with excitation energies near the $E_0$ as well as $E_+$ transitions, However, in contrast to the distinct LO-phonon line-width resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the $E_+$ transition, respectively, we have not observed any resonant LO-phonon line-width broadening or activation of sharp zone-boundary phonons near the $E_0$ transition. The observed RRS results reveal that the conduction-band minimum of GaAsN predominantly consists of the delocalized GaAs bulk-like states of ${\Gamma}$ symmetry.