• Title/Summary/Keyword: X- ray diffraction

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Growth and Photocurrent Properties of CdIn2S4/GaAs Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy 법에 의한 CdIn2S4 단결정 박막의 성장과 광전류 특성)

  • Lee, Sang-Youl;Hong, Kwang-Joon;Park, Jin-Sung
    • Journal of Sensor Science and Technology
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    • v.11 no.5
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    • pp.309-318
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    • 2002
  • A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

A comparative study of electroplating and electroless plating for diameter increase of orthodontic wire (교정용 선재의 직경 증가를 위한 전기도금법과 무전해도금법의 비교연구)

  • Kim, Jae-Nam;Cho, Jin-Hyoung;Sung, Young-Eun;Lee, Ki-Heon;Hwang, Hyeon-Shik
    • The korean journal of orthodontics
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    • v.36 no.2 s.115
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    • pp.145-152
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    • 2006
  • The purpose of this study was to evaluate electroless plating as a method of increasing the diameter of an orthodontic wire in comparison with eletroplating. After pretreatment plating of the 0.016 inch stainless steel orthodontic wire, electroless plating was performed at $90^{\circ}C$ until the diameter of the wire was increased to 0.018 inch. During the process of electroless plating, the diameter of the wire was measured every 5 minutes to examine the increasing ratio of the wire's diameter per time unit. And to examine the uniformity, the diameter at 3 points on the electroless-plated orthodontic wire was measured. An X-ray diffraction test for analyzing the nature of the plated metal and a 3-point bending test for analyzing the physical property were performed. The electroless-plated wire group showed a increased tendency for stiffness, yield strength, and ultimate strength than the electroplated wire group. And there was a statistically significant difference between the two groups for stiffness and ultimate strength. In the electroless-plated wire group, the increasing ratio of the diameter was $0.00461{\pm}0.00003mm/5min$ (0.00092 mm/min). In the electroplated wire group, it was $0.00821{\pm}0.00015mm/min$. The results of the uniformity test showed a tendency for uniformity in both the plating methods. The results of this study suggest that electroless plating of the wire is closer to the ready-made wire than electroplating wire in terms of the physical property. However, the length of plating time needs further consideration for the clinical application of electroless plating.

Heavy Metal Contamination of Soils and Stream Sediments at the Sanggok Mine Drainage, Upper Chungju Lake, Korea (충주호 상류, 상곡광산 수계에 분포하는 토양과 하상퇴적물의 중금속 오염)

  • 이현구;이찬희
    • Journal of the Korean Society of Groundwater Environment
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    • v.5 no.1
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    • pp.10-20
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    • 1998
  • Heavy metal contamination in subsurface soils and stream sediments at the Suggok mine area were investigated on the basis of major, trace and rare earth elements geochemistry and mineralogy. The Sanggok mine area is mainly composed of Cambro-Ordovician carbonate rocks. The mine had been mined for Pb-Zn-Fe and Au- Ag, but already closed in past. For major elements, especially Fe (mean value=18.58 wt.%) and Mn (mean value=4. 18 wt.%) are enriched in soils, and the average enrichment indices of soils and sediments are 6.84 and 1.54, respectively. The average enrichment index of rare earth elements are 0.92 of mining drainage sediments and 0.52 of subsurface soils on the tailing dam. Concentrations of minor and/or environmental toxic elements in those samples range from 29 to 3400 for As,1 to 11 for Cd, 35 to 292 for Cu, 50 to 1827 for Pb, 1 to 22 for Sb and 112 to 2644 for Zn. Extremely high concentrations (mean values) are found in subsurface soils on the tailing dam (As=2278, Cd=7, Cu=206, Pb=1372, Sb=14 and Zn=2231 ppm, respectively). Average enrichment index normalized by composition of non-mining drainage sediments is 2.42 in mining drainage sediments and 25.47 in subsurface soils on the tailing dam. Based on EPA value, enrichment index of toxic elements is 0.53 in non-mining drainage sediments, 1.84 in mining drainage sediments and 23.71 in subsurface soils on the tailing dam. As a results from X-ray powder diffraction method, mineral composition of soils and sediments near the mine area varied in part, and are calcite, dolomite, magnesite, quartz, mica, chlorite and clay minerals. With the separation of heavy minerals, soils and sediments of highly concentrated toxic elements included some pyrite, arsenopyrite, sphalerite, galena, goethite and hydroxide minerals on the polished sections.

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Physical Properties of Cd2GeSe4 and Cd2GeSe4:Co2+ Thin Films Grown by Thermal Evaporation (진공증착법에 의해 제작된 Cd2GeSe4와 Cd2GeSe4:Co2+ 박막의 물리적 특성)

  • Lee, Jeoung-Ju;Sung, Byeong-Hoon;Lee, Jong-Duk;Park, Chang-Young;Kim, Kun-Ho
    • Journal of the Korean Vacuum Society
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    • v.18 no.6
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    • pp.459-467
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    • 2009
  • $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

Effects of SiO2 Incorporation on Catalytic Performance and Physico-Chemical Properties of Iron-Based Catalysts for the Fischer-Tropsch Synthesis (Fischer-Tropsch 합성반응용 Fe계 촉매의 성능 및 물리화학적 특성에 미치는 SiO2 첨가효과)

  • Hyun, Sun-Taek;Chun, Dong Hyun;Kim, Hak-Joo;Yang, Jung Hoon;Yang, Jung-Il;Lee, Ho-Tae;Lee, Kwan-Young;Jung, Heon
    • Korean Chemical Engineering Research
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    • v.48 no.3
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    • pp.304-310
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    • 2010
  • The FTS(Fischer-Tropsch synthesis) was carried out over precipitated iron-based catalysts with or without $SiO_2$ in a fixed-bed reactor at $250^{\circ}C$ and 1.5 MPa. The catalysts with $SiO_2$ showed much higher catalytic activity for the FTS than those without $SiO_2$, displaying excellent stability during 144 h of reaction. The X-ray diffraction and $N_2$ physisorption revealed that the catalysts with $SiO_2$ showed enhanced dispersion of $Fe_2O_3$ compared with those without $SiO_2$. Also, the results of temperature-programmed reduction by $H_2$ showed that the addition of $SiO_2$ markedly promoted the reduction of $Fe_2O_3$ into $Fe_3O_4$ and FeO at low temperatures below $260^{\circ}C$. In contrast, surface basicity of the catalysts, which was analyzed by temperature-programmed desorption of $CO_2$, decreased as a result of $SiO_2$ addition. We attribute the high and stable performance of the catalysts with $SiO_2$ to the improved dispersion and reducibility by the $SiO_2$ addition.

Synthesis and Properties of Molybdenum and Tungsten Oxo-Nitrosyl Complexes of Methylthioamidoxime (산소-니트로실 착물의 연구(제3보): 티오메틸아미드옥심의 몰리브덴과 텅스텐 산소-니트로실 착물의 합성과 특성)

  • Roh, Soo Gyun;Oh, Sang Oh
    • Journal of the Korean Chemical Society
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    • v.40 no.1
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    • pp.28-36
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    • 1996
  • The pentanuclear complexes have been obtained by the reactions of molybdenum(VI) and tungsten(VI) polynuclear complexes with molybdenum(O) and tungsten(O) dinitrosyl mononuclear complexes, and methylthioamidoxime. The prepared complexes (n-Bu4N)2[Mo4O12Mo(NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2](1), (n-Bu4N)2[W4O12Mo(NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2](2), (n-Bu4N)2[Mo4O12W (NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2] (3) have been characterized by elemental analysis, infrared, UV-visible and 1H NMR spectra. The complexes are elucidated the cis-{M(NO)2}2+(M = Mo, W) unit and a slight delocalization by spectroscopy. The structure of (n-Bu4N)2[W4O12Mo(NO) 2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2] was determined by X-ray single crystal diffraction. Crystal data are follows: Monoclinic, $P21}a$, a = 22.14(2) $\AA$, b = 14.93(1) $\AA$, c = 23.20(1) $\AA$, $\beta$ = 111.08(6) $\AA$, V = 7155(9) $\AA$, Z = 4, final R = 0.072 for 6191(I > $3\sigma(I)).$ The structure of complex forms two dinuclear [W2O5{CH3SCH2C(NH2)NHO}{CH3SCH2C(NH)NO}] and a central {Mo(NO)2} 2+ core. The geometric structure of the {Mo(NO)2} 2+unit is the formally cistype and C2v symmetry.

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Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method (Hot Wall Epitaxy(HWE)법에 의한 MnAl2S4 단결정 박막 성장과 광전도 특성)

  • You, Sangha;Lee, Kijeong;Hong, Kwangjoon;Moon, Jongdae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.6
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    • pp.229-236
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    • 2014
  • A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

Enhancement of Exchange Coupling Field and Thermal Stability by an Ultra-thin Mn Inserted layer on NiFe/[FeMn/Mn]80/NiFe Multilayers (NiFe/[FeMn/Mn]80/NiFe 다층박막에서 극-초박막 Mn 삽입에 의한 교환결합세기와 열적 안정성 향상)

  • Kim, Bo-Kyung;Lee, Jin-Yong;Ham, Sang-Hee;Lee, Sang-Suk;Hwang, Do-Guwn
    • Journal of the Korean Magnetics Society
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    • v.13 no.2
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    • pp.53-58
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    • 2003
  • Annealing effects of exchange bias fields ($H_{2ex}$(top), $H_{lex}$ (bottom)) on composite type NiFe/[FeMn/Mn]$_{80}$/NiFe multilayers have been studied. Three samples with ultra-thin Mn inserted layers on glass/Ta(50 $\AA$)/NiFe(150 $\AA$)/[F $e_{53}$M $n_{47}$(1.25 $\AA$)/Mn(0 $\AA$, 0.11 $\AA$, 0.3 $\AA$)]$_{80}$/NiFe(90 $\AA$)/Ta(50 $\AA$) were prepared by ion beam sputtering. The average x-ray diffraction peak ratios NiFe(111) of FeMn (111) fcc textures for the Mn inserted total thicknesses of 0 $\AA$, 9 $\AA$, and 24 $\AA$ were about 0.65, 0.90, and 1.5, respectively. For the sample without Mn inserted layer, the $H_{2ex}$ of 260 Oe up to 300 $^{\circ}C$ disappeared at 350 $^{\circ}C$. For two multilayer samples with ultra-thin Mn layers of 0.11 $\AA$ and 0.3 $\AA$, the $H_{2exs}$ of 310 Oe and 180 Oe up to 300 $^{\circ}C$ endured of 215 Oe and 180 Oe at 350 $^{\circ}C$, respectively. The $H_{ex}$ (bottom)s of three samples decreased from 100 Oe to 70 Oe up to 250 $^{\circ}C$, while these values increased beyond 300 $^{\circ}C$. This observation can be attributed to less diffusive path of Mn atoms in bottom NiFe than top NiFe layer. The top and bottom coercive fields slightly varied about 5 Oe∼10 Oe. From these results, we could obtain the enhancement of exchange coupling intensity and thermal stability by an ultra-thin Mn inserted layer on NiFe/[FeMn/Mn]$_{80}$/NiFe Multilayers.

Mineral Chemistry and Geochemistry of the Bentonites Intercalated within the Basal Conglomerates of the Tertiary Sediments in Korea and Their Stratigraphical Implication (제3기층 기저역암에 협재되는 벤토나이트의 광물학, 지화학적 연구 및 층서적 적용)

  • 이종천;이규호;문희수
    • Economic and Environmental Geology
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    • v.34 no.1
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    • pp.13-23
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    • 2001
  • Bentonite layers are intercalated within the basal conglomerates in the Tertiary sedimentary basins of Kampo, Janggi and Pohang, southeastern Korea. Eighteen samples of the bentonites went through X-ray diffraction, scanning electron microscopy, heavy mineral analyses, chemical analyses and oxygen, hydrogen stable isotope analyses to define the mineralogical characters of the bentonites. Heavy minerals such as zircons, apatites, amphiboles and biotites separated from bentonites show clean and euhedral surfaces, which are the characteristic features of volcanic origin. But biotites from the Chunbook Conglomerate are found as altered and heavily broken flakes which implies longer transportation of these bentonites. $TiO_{2}/Al_{2}O_{3} ratios of <2 $\mu$m particle fractions (the Chunbook Conglomerate 0.031; Janggi 0.029; Kampo 0.025) suggest that those are originated from volcanic tuffs. That is, the higher the value is, the more mafic in chemical compositions of the original tuffs. Authigenic montmorillonite and zeolite minerals were observed by SEM, which indicates diagenesis origin of bentonites. But the samples from the Chunbook Conglomerate showed only chaotically packed clay flakes in the matrix of sands or conglomerates, which implies detrital influence, not authigenic origin. The structural formulae of montmorillonite from these basins reflects their environment of formation. Fe (Ⅵ) can show the redox condition of its past environment and much lower $Fe^{2+}(Ⅵ)/Fe^{3+}(Ⅵ)$ ratios in montmorillonite of the Chunbook Conglomerate imply the greater oxidizing influence. Calculated burial depths from oxygen stable isotope data of the samples from the Chunbook Conglomerate generally fall to the range of 929~963 m whereas the real burial depth of this area is only 530~580 m. This could be explained as the bentonites of the Chunbook conglomerate had not been formed in situ. Discriminant analyses with the data from chemical analyses and structural formulae of montmorillonites show that bentonites from three different basins could definitely be distinguished with each other. This result arises from the different chemical compositions of original volcanic ashes and the difference of sedimentary environments.

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Production and evaluation of raw materials for porcelain using clay mineral (점토 광물을 이용한 도자기용 소지 제조 및 물성 평가)

  • Kim, Jong-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.6
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    • pp.317-328
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    • 2019
  • In this work, we investigated clay and raw materials from China (black clay, red clay, white clay) and Korea (Cheonan clay, Obu clay) used for the manufacture of porcelain products. According to chemical analysis results, feldspar components containing CaO, K2O, Na2O and quartz are found in clay materials besides primary clay such as kaollinte, for the clay materials from Korea, which is found more in clay materials from Korea than from China. For the Fe2O3 content, governing whiteness of porcelain products, more iron oxide (> 5 %) is found in Korean clays (Cheonan clay, obu clay, red clay) compared to those form China (black, white clay). Through X-ray diffraction analysis, kaolinite and Halloysite are found to be main phases for all the raw materials and second phases such as quartz and pyrophyllite are found. Using these clay materials, raw materials for porcelain products were produced, and the physicochemical properties were investigated for sintered samples. Absorption rate is in order of Baekja-A < Baekja-B < Yeonbuncheong < Jinbuncheong < Cheongja, and the sample, sintered at 1250℃ in reductive atmosphere, exhibits the lowest absorption rate. Comparing the color of the sintered samples, the samples sintered in oxidative atmosphere (L* value: 86~95 %) show higher whiteness value than those sintered in reductive atmosphere (L* value: 81~93 %). For the Cheongja and Buncheong, the samples sintered in reductive atmosphre shows higher whiteness, L* values, and low a*/b* value, which is due to reduction of iron oxide (Fe2O3).