• Journal of the Korean Data and Information Science Society
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• 제10권1호
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• pp.243-250
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• 1999

We consider $Y=X{\lambda}Z,\;{\lambda}>0$, where X and Z are independent random variables, and Y is the length biased distribution or the equilibrium distribution of X. The purpose of this paper is to consider the distribution of X or Y when the distribution of Z is given and the distribution of Z when the distribution of X or Y is given, In particular, we obtain that the necessary and sufficient conditions for X to be $X^{2}({\upsilon})\;is\;Z{\sim}X^{2}(2)\;and\;for\;Z\;to\;be\;X^{2}(1)\;is\;X{\sim}IG({\mu},\;{\mu}^{2}/{\lambda})$, where $IG({\mu},\;{\mu}^{2}/{\lambda})$ is two-parameter inverse Gaussian distribution. Also we show that X is smaller than Y in the reverse Laplace transform ratio order if and only if $X_{e}$ is smaller than $Y_{e}$ in the Laplace transform ratio order. Finally, we can get the results that if X is smaller than Y in the Laplace transform ratio order, then $Y_{L}$ is smaller than $X_{L}$ in the Laplace transform order, and that if X is smaller than Y in the reverse Laplace transform ratio order, then $_{\mu}X_{L}$ is smaller than $_{\nu}Y_{L}$ in the Laplace transform order.

• 한국재료학회지
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• 제5권6호
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• pp.690-698
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• 1995

Oxidized Si wafer 위에 반응가스로 Si $H_4$과 Ge $H_4$을 사용하여 RTCVD(rapid thermal chemical vapor deposition)법으로 증착온도 450~5$50^{\circ}C$에서 다결정 S $i_{1-x}$G $e_{x}$ 박막을 증착하였다. 증착된 S $i_{1-x}$, G $e_{x}$ 박막은 증착온도와 Ge $H_4$Si $H_4$입력비 변화에 따른 Ge몰분율 변화와 증착속도에 대해 고찰하였으며, XRD와 AFM(atomic force microscopy)등을 이용하여 결정상과 표면거칠기 등을 조사하였다. 실험결과, 다결정 S $i_{1-x}$G $e_{x}$ 박막은 32~37 Kcal/mole의 활성화에너지 값을 가졌으며 증착속도는 증착온도와 입력비 중가에 따라 증가하였다. 또한 조성분석으로부터 입력비 감소와 증착온도 증가에 따라 Ge몰분율이 감소함을 알 수 있었다. 증착된 S $i_{1-x}$G $e_{x}$ 박막은 450, 475$^{\circ}C$에서 임력비가 0.05일때 비정질 형태로 존재하였으며 그 이외의 실험영역에서는 다결정 형태로 존재하였다. 기존의 다결정 Si 중착온도($600^{\circ}C$이상)와 비교하여 Ge $H_4$을 첨가함으로써 비교적 낮은온도(5$50^{\circ}C$이하) 영역에서 다결정 S $i_{1-x}$G $e_{x}$ 박막을 얻을 수 있었다. 또한 증착층의 표면거칠기를 측정한 결과, 증착온도와 입력비가 증가함에 따라 표면 거칠기( $R_{i}$ )가 증가함을 알 수 있었다.을 알 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제11권12호
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• pp.6188-6204
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• 2017

Over the years, more password-based authentication key agreement schemes using chaotic maps were susceptible to attack by off-line password guess attack. This work approaches this problem by a new method--new theorem of chaotic maps: $T_{a+b}(X)+T_{a-b}(X)=2T_a(X)T_b(X)$,(a>b). In fact, this method can be used to design two-party, three-party, even in N-party intelligently. For the sake of brevity and readability, only a two-party instance: a novel Two-party Password-Authenticated Key Agreement Protocol is proposed for resisting password guess attack in this work. Compared with the related literatures recently, our proposed scheme can be not only own high efficiency and unique functionality, but is also robust to various attacks and achieves perfect forward secrecy. For capturing improved ratio of security and efficiency intuitively, the paper firstly proposes a new parameter called security/efficiency ratio(S/E Ratio). The higher the value of the S/E Ratio, the better it is. Finally, we give the security proof and the efficiency analysis of our proposed scheme.

• Journal of the Korean Data and Information Science Society
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• 제25권1호
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• pp.219-226
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• 2014

In this paper, we derived estimators of reliability P(Y < X) and the distribution of ratio in the bivariate exponential density. We also considered the means and variances of M = max{X,Y} and m = min{X,Y}. We finally presented how E(M), E(m), Var(M) and Var(m) are varied with respect to the ones in the bivariate exponential density.

• 대한기계학회논문집
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• 제19권1호
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• pp.87-98
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• 1995

When the crack in orthotropic material is propagating under dynamic model I load, influences of anisotropic property ratio $E_{L}$/ $E_{T}$ on stress and displacement around propagating crack tip are studied in this paper. When M<0.55 and .alpha.=90.deg.(.alpha.; the angle of fiber direction with crack propagating direction, M; crack propagation velocity/shear stress wave velocity), the influence of $E_{L}$/ $E_{T}$ on stress .sigma.$_{x}$, .sigma.$_{y}$, .tau.$_{xy}$ and .sigma.$_{\theta}$ is the greast on .sigma.$_{y}$. Except M<0.55 and .alpha.=90.deg., it is the greast on .sigma.$_{x}$ in any situation. Increasing $E_{L}$/ $E_{T}$, stress components are increased or decreased. When maximum stress is based, the stress .sigma.$_{x}$(.alpha.=90.deg.), .sigma.$_{y}$(.alpha.=0.deg.) and .tau.$_{xy}$ (.alpha.=90.deg.) are decreased with increment of $E_{L}$/ $E_{T}$ in M=0. any stresses except .sigma.$_{*}$x/(.alpha.=0.deg.) are decreased with increment of $E_{L}$/ $E_{T}$ in M=0.9. When .alpha.=90.deg., the influence of $E_{L}$/ $E_{T}$ on displacement U and V is V>U in any velocities of crack propagation, when .alpha.=0.deg., it is VU in M>0.75 and when $E_{L}$/ $E_{T}$ is increased, U and V are decreased in any conditions.sed in any conditions.tions.tions.tions.