• International Journal of Precision Engineering and Manufacturing
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• v.9 no.2
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• pp.39-43
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• 2008

Atmospheric pressure plasma polishing (APPP) is a noncontact precision machining technology that uses low temperature plasma chemical reactions to perform atom-scale material removal. APPP is a complicated process, which is affected by many factors. Through a preliminary theoretical analysis and simulation, we confirmed that some of the key factors are the radio frequency (RF) power, the working distance, and the gas ratio. We studied the influence of the RF power and gas ratio on the removal rate using atomic emission spectroscopy, and determined the removal profiles in actual operation using a commercial form talysurf. The experimental results agreed closely with the theoretical simulations and confirmed the effect of the working distance. Finally, we determined the element compositions of the machined surfaces under different gas ratios using X-ray photoelectron spectroscopy to study the influence of the gas ratio in more detail. We achieved a surface roughness of Ra 0.6 nm on silicon wafers with a peak removal rate of approximately 32 $mm^{3}$/min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.909-916
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• 2005

The structural and electrical property of RF magnetron sputtered ZnO thin film have been studied as a function of RF power, substrate temperature, oxygen/argon gas ratio and film thickness at constant sputtering power, sputtering working pressure and target-substrate distance. To analyze a crystallo-graphic properties of the films, $\theta$/2$\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity and surface roughness highly depended on oxygen/argon gas ratio. The resistivity of ZnO thin film(6000 ${\AA}$) rapidly increased with increasing oxygen ratio and the resistivity value of $9 {\ast} 10^7 {\Omega}cm$ was obtained at a working pressure of 10 mTorr with the same oxygen/argon gas ratio. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with the same oxygen/argon gas ratio showed the excellent roughness value of 28.7 ${\AA}$. With increase of the substrate temperature, The C-axis preferred orientation of ZnO thin film increases and the resistivity decreases due to deviation from the stoichiometric ZnO due to oxygen deficiency.

• The KSFM Journal of Fluid Machinery
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• v.14 no.2
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• pp.41-46
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• 2011

This study investigated the changes in performance and operating characteristics of an F-class gas turbine according to the change of working fluid from air to carbon dioxide. The revised gas turbine is the topping cycle of the semi-closed oxy-fuel combustion combined cycle. With the same turbine inlet temperature, the $CO_2$ gas turbine is expected to produce about 85% more power. The main contributor is the greater compressor mass flow and the added oxygen flow for the combustion. Compressor pressure ratio increases about 50%. However, the gas turbine efficiency reduces about 10 %. Modulation of inlet guide vane to reduce the compressor inlet mass flow, the major purpose of which is to reduce the compressor inlet Mach number, was also performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.724-728
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• 2004

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.400-406
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• 1999

In an effort to obtain high efficiency in gas fired absorption chillers, a new working fluid has been developed with thc addition of the component of $LiNO_3$, LiCl and LiI to the conventional solution of $LiBr-H_2O$. The solubility and vapor pressure of the 4 component working fluid developed in this work were measured and compared to the results of $LiBr-H_2O$ solution. It was observed that there exists an optimal mole ratio of the inorganic salts in terms of solubility. The mole ratio of LiBr, $LiNO_3$ and LiCl was found to be around 5:1:1~2 in the $LiBr-LiNO_3-LiCl-H_2O$ mixture, and in the case of $LiBr-LiO_3-Lil-H_2O$ and $LiBr-Lil-LiCl-H_2O$ mixtures, the mole ratio of LiBr, $LiNO_3$ and Lil/ LiBr, LiI and LiCl were found to be around 5:1:1 and 5:1:0.5~1 respectively. The vapor pressure of the 4 component working fluid of the optimal mole ratio was increascd with adding the component of $LiNO_3$, LiCl and LiI except for $LiBr-LiNO_3-LiCl-H_2O$ mixture. The absorption capacity of $LiBr-LiNO_3-LiCl-H_2O$ mixture was obtained higher than that of $LiBr-H_2O$ mixture.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.407-410
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

• Journal of Environmental Health Sciences
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• v.21 no.4
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• pp.24-31
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• 1995

Gas sensing element, $\alpha-Fe_2O_3$ was synthesized by dehydration, reduction, and oxidation of $\alpha-FeOOH$, which was synthesized with $FeSO_4\cdot 7H_2O$ and NaOH. They were produced as a bulk-type, a thick film-type. Then, their responses and mechanisms of response to the gas of carbon monoxide were studied. The qualities of gas sefising elements are decided by the structure and the relative surface area. In the process of $\alpha-FeOOH$ synthesis, the effects of reaction conditions as the equivalent ratio, on the structure and the relative surface area of gas sensing element were observed. The changes of the structure were measured with XRD, SEM,TG-DTA and BET. The resistance changes of the synthesized gas sensor in the air were measured. The response ratio were also measured for the changes of working temperature and gas concentration. As a result of analysis with XRD, it was confirmed that the the best conditions for the synthesis of $\alpha-FeOOH$ were equivalent ratio 0.65. The thick film-type element of $\gamma-Fe_2O_3$ responded more quickly than the bulk-type did. The structure and the relative surface area of the $\rho-FeOOH$ were confirmed as the important factors deciding gas response charcteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1619-1625
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• 2007

The gas mixture ratio of PDP discharges plays a very important role in the discharge characteristics of a plasma display panel. The increase of Xe contents results in the increases of luminance and luminous efficiency while it also results in the increase of the breakdown voltage. The addition of He gas increases the brightness and the luminous efficiency. Especially, the luminance and the luminous efficiency have a maximum value when the partial pressure of He is about 10% of the total pressure for a standard plasma display panel with Xe fraction of $10\sim30%$.

• 유체기계공업학회:학술대회논문집
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• 1999.12a
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• pp.109-113
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• 1999

Thermal mass flow meter (TMF) is used measuring the small mass flow rate of gases. Generally, flow rate measuring accuracy of TMF is $\pm2{\%}$ of full scale. TMF is manufactured for specified working pressure and specified working gas by customer. If it were applied for different working pressure and gases, flow rate measurement accuracy decreased dramatically. In this study, a TMF tested with three different gases and pressure range of 0.2 MPa to 1.0 MPa. Effect of specific heat cause to increase flow measurement error as much as ratio of specific heat compare with reference gas. Pressure change cause to increase flowrate measurement deviation about $-0.2{\%}$ as the working pressure decreased 0.1 MPa.

• Journal of the Korean Society of Safety
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• v.11 no.2
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• pp.67-78
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• 1996

Gas sensing element, $\gamma-Fe_2O_3$was synthesized by dehydration, reduction, and oxidation of $$${\gamma}$-FeOOH, which was synthesized with $FeSO_4\;{\cdot}\;7H_2O$ and NaOH. They were produced as a bulk-type, a thick film-type. Then, their responses and mechanisms of response to the gas of liquefied-petroleum were studied. The qualities of gas sensing elements are decided by the structure and the relative surface area. In the process of $\alpha-FeOOH $synthesis, the effects of reaction conditions as the equivalent ratio, on the structure and the relative surface area of gas sensing element were observed. The changes of the structure were measured with XRD, SEM, TG-DTA and BET. The resistance changes of the synthesized gas sensor in the air were measured. The response ratio were also measured for the changes of working temperature and gas concentration. As a result of analysis with XRD, it was confirmed that the the best conditions for the synthesis of $\alpha -FeOOH$ were equivalent ratio 0.65. The thick film-type element of $\gamma-Fe_2O_3$responded more quickly than the bulk-type did. The structure and the relative surface area of the $\alpha-FeOOH $were confirmed as the important factors deciding gas response charcteristics.