Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers

Si(100)기판위에 성장된 3C-SiC 박막의 반응성 이온식각 특성

  • ;
  • ;
  • Shigehira Nishino (Kyoto Institute of Technology Electronics and Information Science)
  • 정귀상 (동서대학교 정보시스템공학부 메카트로닉스공학전공) ;
  • 정수용 (동서대학교 정보시스템공학부 메카트로닉스공학전) ;
  • Published : 2004.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

Keywords

References

  1. Sensors & Actuators v.82 Silicon carbide as a new MEMS technology P.M.Sarro https://doi.org/10.1016/S0924-4247(99)00335-0
  2. Appl. Phys. Lett. v.78 no.2 Mono-crystalline silicon carbide nanoelectromechanical systems Y.T.Yang;K.L.Ekinci;X.M.H.Huang;L.M.schiavone;M.L.Roukes https://doi.org/10.1063/1.1338959
  3. Micromachined transducers Sourcebook G.T.A.Kovacs
  4. J. Vac. Sci. Technol. v.B19 Deep etching of silicon carbide for micromachined applications: Etch rates and etch mechanisms P.Chabert
  5. Mater. Sci. Forum v.338 Reactive ion etching in CF₄/O₂ gas mixtures for fabricating SiC devices M.Imaizumi;Y.Tarui;H.Sungimoto;J.Tanimura;T.Takami;T.Ozeki https://doi.org/10.4028/www.scientific.net/MSF.338-342.1057
  6. Appl. Phys. Lett. v.68 no.26 High etch rates of SiC in magnetron enhanced $SF_6$ plasmas G.F.McLane;J.R.Flemish https://doi.org/10.1063/1.115996
  7. J. Electrochem. Soc. v.142 no.8 Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas P.H.Yih;A.J.Steckl https://doi.org/10.1149/1.2050105
  8. J. Vac. Sci. Technol. v.B19 no.6 Deep reactive ion etching of silicon carbide S.Tanaka;K.Rajanna;T.Abe;M.Esashi