• 제목/요약/키워드: Working distance

검색결과 500건 처리시간 0.025초

Si(100)기판위에 성장된 3C-SiC 박막의 반응성 이온식각 특성 (Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers)

  • 정귀상;정수용
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.724-728
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    • 2004
  • This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

광 강도변화를 이용한 가공면 영상의 텍스쳐 특징분석 (Texture Feature Analysis of Machined Surface Image Using Intensity Gradient)

  • 사승윤
    • 한국생산제조학회지
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    • 제7권6호
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    • pp.49-56
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    • 1998
  • Super precision working technique and machine tool have been continually developed thanks to advanced electronic field. To obtain good result. it is necessary to investigate surface in grinding with $mu extrm{m}$ level. There were quite many researches to satisfy these demands by using non-contact methods through the computer vision. In this study, the texture of working surface was analyzed. co-occurrence matrices was obtained from the surface roughness. Texture parameter was obtained using position operator composed of $ heta$, d according to variation of angle direction and distance. As a result, it was found that surface texture was more affected by direction($\theta$) than distance(d).

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주사전자 현미경의 통계적 인자 해석 (Statistical Factor Analysis of Scanning Electron Microscope)

  • 권상희;김병환
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2009년도 정보 및 제어 심포지움 논문집
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    • pp.335-337
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    • 2009
  • A scanning electron microscope(SEM) is a system that visualizes complex surface features. The resolution of SEM is affected by each of equipment components. In this study, we examined the effects of the four factors including the beam current, magnification, voltage and working distance. A statistical analysis was conducted to investigate the main and interaction effects. For a systematic characterization, a $2^4$ full factorial experiment was conducted. The $R^2$ of constructed statistical model was 88.9%. The main effect revealed that the current and working distance are dominant factors. Of the interactions, those between the current and voltage yielded the highest interaction. 3D plots generated from the model were used to explore various parameter effects.

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광 강도변화를 이용한 가공면의 텍스쳐 해석 (Texture Analysis of Machined Surface Using Intensity Gradient)

  • 사승윤
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 1998년도 춘계학술대회 논문집
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    • pp.316-322
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    • 1998
  • Super precision working technique and machine tool have been developing continually thanks to advanced electronic field. To obtain good result. it is necessary to investigate surface state in grinding with ${\mu}{\textrm}{m}$ level. There were so many researches to satisfy these demands using non-contact methods through the computer vision. In this study, the texture of working surface was analyzed. cooccurrence matrice was obtained from the surface roughness. Texture parameter was obtained by means of position operator compose of $\theta$. d according to variation of angle direction and distance. As a result, it was found that surface texture was more effected by direction ($\theta$) then distance(d).

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컴퓨터 제어 패턴 재봉기를 위한 패턴 데이타 추출 및 생성 알고리즘 (Pattern Data Extraction and Generation Algorithm for A Computer Controlled Pattern Sewing Machine)

  • 윤성용;백상현;김일환
    • 산업기술연구
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    • 제19권
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    • pp.179-187
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    • 1999
  • The computer pattern sewing machine is an automatic sewing machine that is controlled by an input pattern. Even a novice can run this machine for various tasks fast and reliably such as sewing a button, a belt ring and an airbag, etc. The pattern processing software, which is the main software of this machine, is for editing and modifying pattern data by online teaching or off-line editing, setting up parameters, and calculate a moving distance of working area on the x-y axes. In this paper we propose an algorithm to generate pattern data for sewing by simplifying image data. The pattern data are composed of outline data like dot, line, circle, arc, curve, etc. We need converting this data into sewing data which involve sewing parameter, moving distance of working are an the x-y axes, thread, spindle speed.

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티타늄합금의 나선운동 미세입자 분사가공 시 표면거칠기 특성 (The Characteristics of Surface Roughness when Micro Blasting of Titanium Alloy with Spiral Movement)

  • 김상현;왕덕현;이세한
    • 한국기계가공학회지
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    • 제11권4호
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    • pp.125-130
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    • 2012
  • When conducting a powder blasting to a spinning cylindrical workpiece in the codition of 0.76~1.5(mm) in nozzle size, 1~5(atm) in working pressure, and 40~100(mm) in stand off distance, the value of surface roughness becomes under $0.283{\mu}m$, which is not enough to expand a bonding area. In the case of horizontal transfer blasting with 0.76mm of nozzle size, 100mm of stand off distance, and 2~5atm of working pressure, $0.5{\sim}0.7{\mu}m$ of surface roughness has achieved regardless of feed rate.

Electrical Properties of the Transparent Conducting Oxide Layers of Al-doped ZnO and WO3 Prepared by rf Sputtering Process

  • 강동수;김희성;이붕주;신백균
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.316-316
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    • 2014
  • Two different transparent conducting oxide (TCO) layers of Al-doped ZnO (AZO) and $WO_3$ were prepared by a rf sputtering process. Working pressure, deposition time, and target-to-substrate distance were varied for the sputtering process to improve electrical properties of the resulting layer. Thickness of the TCO layers was measured by a profile meter of ${\alpha}$-step. To evaluate the electrical conductivity, surface resistivity of the TCO layers was measured by a four-point probe technique. Decrease of the working pressure resulted in increase of deposition rate and decrease of surface resistivity of the resulting layer. Increase of the layer thickness due to increased deposition time resulted in decrease of surface resistivity of the resulting layer. The shorter the target-to-substrate distance was, the lower was the surface resistivity of the resulting layer.

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Analysis of Factors Impacting Atmospheric Pressure Plasma Polishing

  • Zhang, Ju-Fan;Wang, Bo;Dong, Shen
    • International Journal of Precision Engineering and Manufacturing
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    • 제9권2호
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    • pp.39-43
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    • 2008
  • Atmospheric pressure plasma polishing (APPP) is a noncontact precision machining technology that uses low temperature plasma chemical reactions to perform atom-scale material removal. APPP is a complicated process, which is affected by many factors. Through a preliminary theoretical analysis and simulation, we confirmed that some of the key factors are the radio frequency (RF) power, the working distance, and the gas ratio. We studied the influence of the RF power and gas ratio on the removal rate using atomic emission spectroscopy, and determined the removal profiles in actual operation using a commercial form talysurf. The experimental results agreed closely with the theoretical simulations and confirmed the effect of the working distance. Finally, we determined the element compositions of the machined surfaces under different gas ratios using X-ray photoelectron spectroscopy to study the influence of the gas ratio in more detail. We achieved a surface roughness of Ra 0.6 nm on silicon wafers with a peak removal rate of approximately 32 $mm^{3}$/min.

통계적 실험 계획법을 이용한 광학 벤치 설계 규칙의 설정 (Optical bench design rule formulated by statistical design of experiment)

  • 박세근;이재영;이승걸
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.123-127
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    • 2002
  • In order to set up the design rule of micro optical bench, optical coupling efficiencies of two sets of test benches are calculated. Simple linear connections of incoming and outgoing optical fibers with and without ball lenses are designed. Positional errors that are possible in actual fabrication processes are considered in the calculations and their tolerances are determined from 3dB conditions. For a simple fiber-to-fiber connection, the working distance is limited to $2.7\mu\textrm{m}$ and tilt error $5.8^{\circ}$. When ball lenses are located in front of each fiber, the working distance can be extended over $60\mu\textrm{m}$ , but the positional errors have the strong interaction among position parameters and thus should be considered simultaneously for tolerance design.

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힘 반향 조이스틱을 이용한 햅틱 인터페이스 (A Haptic Interface Using a Force-Feedback Joystick)

  • 고애경;김홍철;이장명;최준영
    • 제어로봇시스템학회논문지
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    • 제13권12호
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    • pp.1207-1212
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    • 2007
  • We propose a haptic interface algorithm for joystick operators working in remote control systems of unmanned vehicles. The haptic interface algorithm is implemented using a force-feedback joystick, which is equipped with low price DC motors without encoders. Generating specific amounts of forces on the joystick pole according to the distance between a remote controlled vehicle and obstacles, the haptic interface enables the operator to perceive the distance information by the sense of touch. For the case of no joystick operation or no obstacles in the working area, we propose an origin control algorithm, which positions the joystick pole at the origin. The origin control algorithm prevents the false movement of the remote vehicles and provides the operator with a realistic force resisting the joystick pole's movement. The experiment results obtained under various scenarios exemplify the validity of the proposed haptic interface algorithm and the origin control algorithm.