• Journal of the Korean Society of Radiology
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• v.17 no.5
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• pp.725-733
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• 2023

The purpose of this study is to evaluate the effectiveness of virtual grid software (VGS). The purpose of this study is to evaluate the changes in energy and object thickness by dividing the use of VGS into two cases (Without-VGS) without using a movable grid. We attempted to determine the effectiveness of VGS by acquiring images using a chest phantom and a thigh phantom and analyzing SNR and CNR. In the chest phantom and femoral phantom, the tube flow was fixed at 2.5 mAs, and the tube voltage was changed by 10 kVp from 60 to 100 kVp to measure SNR and CNR, and SNR was about 1.09 to 8.86% higher in the chest phantom than in Without-VGS, and CNR was 4.18 to 14.56% higher in the VGS than in Without-VGS. And in the femoral phantom, SNR was about 9.78 to 18.05% higher in VGS than in Without-VGS, and CNR was 21.07 to 44.44% higher in VGS than in Without-VGS. The tube voltage was fixed at 70 kVp in the chest phantom and the femoral phantom, and the amount of tube current was changed at 2.5 to 16 mAs, respectively, and after X-ray irradiation, SNR and CNR were measured in the chest phantom, which was about 1.49 to 11.11% higher in VGS than in Without-VGS, and CNR was 4.76 to 13.40% higher in VGS than in Without-VGS. And in the femoral phantom, SNR was about 2.22 to 17.38% higher in VGS than in Without-VGS, and CNR was 13.85 to 40.46% higher in VGS than in Without-VGS. Therefore, if an inspection is required with a mobile X-ray imaging device, it is believed that good image quality can be obtained by using VGS in an environment where it is difficult to use a mobile grid, and it is believed that the use of mobile X-ray devices can be increased.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.157-159
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• 2008

An numerical investigation of the flow characteristics inside a diffusing S-duct inlet with and without vortex generators(VGs) was conducted. The primary discussion herein focuses on development of secondary flow in the S-duct with and without VGs, pressure recovery and distortion at the exit are also discussed. Full three-dimensional Navier-Stokes equations are solved using finite volume method and $k-\varepsilon$ turbulence model is employed. In order to validate the credibility of the numerical methods, predicted results of surface pressure are compared with flight test for the S-duct inlet without VGs, and it shows fairly good agreement. The result shows that VGs alter the flow characteristics in the S-duct and are effective in reducing distortion and ineffective in improving pressure recovery.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.18 no.2
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• pp.151-157
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• 2006

The present paper reports the method for evaluation of heat-transfer performance of finned tube heat exchangers in a low Reynolds number regime (Re = $160\~800$) and also reports the data of heat transfer and pressure loss taken from a finned tube heat exchanger with/without vortex generators (VGs) installed as a heat-transfer enhancement device. The evaluation is based on the modified single blow method conducted in a specially designed low Reynolds number duct. Three different test core geometries, i.e., fin only, fin-tube without VGs and that with VGs, are studied here. The data of heat transfer and pressure loss taken from the fin only geometry agree well with the empirical correlations, thus validating the present method as used for low Reynolds number regime. The data taken from the finned tube geometries with and without VGs are presented and compared to examine the effect of VGs in the low Reynolds number regime.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.536-540
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• 1999

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

• Journal of information and communication convergence engineering
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• v.10 no.1
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• pp.85-90
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• 2012

A 40-MS/sec 10-bit pipelined analog to digital converter (ADC) with a 1.2 Vpp differential input signal is proposed. The implemented pipelined ADC consists of eight stages of 1.5 bit/stage, one stage of 2 bit/stage, a digital error correction block, band-gap reference circuit & reference driver, and clock generator. The 1.5 bit/stage consists of a sub-ADC, digital to analog (DAC), and gain stage, and the 2.0 bit/stage consists of only a 2-bit sub-ADC. A bootstrapped switch with a constant resistance is proposed to improve the linearity of the input switch. It reduces the maximum VGS variation of the conventional bootstrapped switch by 67%. The proposed bootstrapped switch is used in the first 1.5 bit/stage instead of a sample-hold amplifier (SHA). This results in the reduction of the hardware and power consumption. It also increases the input bandwidth and dynamic performance. A reference voltage for the ADC is driven by using an on-chip reference driver without an external reference. A digital error correction with a redundancy is also used to compensate for analog noise such as an input offset voltage of a comparator and a gain error of a gain stage. The proposed pipelined ADC is implemented by using a 0.18-${\mu}m$ 1- poly 5-metal CMOS process with a 1.8 V supply. The total area including a power decoupling capacitor and the power consumption are 0.95 $mm^2$ and 51.5 mW, respectively. The signal-to-noise and distortion ratio (SNDR) is 56.15 dB at the Nyquist frequency, resulting in an effective number of bits (ENOB) of 9.03 bits.