Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Fabrication and its characteristics of $WN_x$ self-align gate GaAs LDD MESFET

$WN_x$ Self-Align Gate GaAs LDD MESFET의 제작 및 특성

  • 문재경 (한국전자통신연구원 회로소자기술연구소 화합물반도체연구부 무선통신회로팀) ;
  • 김해천 (한국전자통신연구원 회로소자기술연구소 화합물반도체연구부 무선통신회로팀) ;
  • 곽명현 (한국전자통신연구원 회로소자기술연구소 화합물반도체연구부 무선통신회로팀) ;
  • 강성원 (한국전자통신연구원 회로소자기술연구소 화합물반도체연구부 무선통신회로팀) ;
  • 임종원 (한국전자통신연구원 회로소자기술연구소 화합물반도체연구부 무선통신회로팀) ;
  • 이재진 (한국전자통신연구원 회로소자기술연구소 화합물반도체연구부 무선통신회로팀)
  • Published : 1999.12.01
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Abstract

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

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