• 농업과학연구
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• 제39권2호
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• pp.271-277
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• 2012

Dimensions, operation conditions and improvement items for round roof windows were investigated in arch shape single-span plastic greenhouse with roof vents, and natural ventilation performance was analyzed based on the ventilation theory. Diameter of round roof windows was mostly 60 cm, and chimney height projected on roof was average 30 cm. Installation space was mostly 5 to 6 m but farmhouse of 10 m and over was 16.7% also. A round roof window which has 60 cm diameter was installed to 6 m space generally and 80 cm diameter was installed to 10 m space, but correct standards did not exist. There were a lot of opinions that ventilation effect of round roof windows is fairly good and user satisfaction is generally excellent. It is problem that there is few effects in summer and that vinyl around each vent tears well and rainwater leaks, and improvement hope item required development of automatic control system. In the wind speed of 0.3 m/s, it was estimated that natural ventilation rates were 0.69, 0.55, 0.50 and 0.48 volumes per minute in case of 2, 4, 6 and 8 m installation space for round roof windows, respectively. It was analyzed that the ratio of ventilation due to buoyancy out of total ventilation were 65.2, 41.9, 29.9 and 22.8% in case of 2, 4, 6 and 8m installation space, respectively. By the round roof windows installed at space of 6 m, ventilation rate was estimated to 0.5 volumes per minute, and we can expect the increase in ventilation rate of 30%. In order to meet the recommended ventilation rate for summer season, we have to install the round roof windows at space of 1 to 2 m. However, it is difficult to apply those installation space because of falling productivity due to lower light transmittance as well as rising costs. It is estimated that the installation space of 6m is appropriate for spring or fall season. Therefore it is necessary to encourage installing the roof windows in single-span plastic greenhouses.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.280-283
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• 2007

The first grid-connected, building-integrated transparent amorphous silicon photovoltaic installation has been operated since October 2004 in Yongin, Korea. The 2.2kWp transparent PV system was applied to the facade of entrance hall in newly constructed KOLON E&C R&D building. The PV module is a nominal 0.98m ${\times}$ 0.95m, 10% transparent, laminated, amorphous(a-Si) thin-film device rated at 44 Wp per module. To demonstrate the architectural features of thin film PV technologies for daylighting application, transparent PV modules are attached to the building envelope with the form of single glazed window and special point glazing(SPG) frames. Besides power generation, the 10% transmittance of a-Si PV module provides very smooth natural daylight to the entrance hall without any special shading devices for whole year. The installation is fully instrumented and is continuously monitored in order to allow the performance assessment of amorphous silicon PV operating at the prevailing conditions. This paper presents measured power performance data from the first 12 months of operation. For the first year, annual average system specific yield was just 486.4kWh/kWp/year which is almost half of typical amorphous silicon PV output under the best angle and orientation. It should be caused by building orientation and self-shading of adjacent mass. Besides annual power output, various statistical analysis was performed to identify the characteristics of transparent thin film PV system.

• KIEAE Journal
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• 제16권3호
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• pp.113-119
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• 2016

Purpose: In this study, we evaluate the annual energy performance of the detached house which was designed with the aim of zero energy. Method: The experimental house which was constructed in Gonju Chungnam in 2013, is the single family detached house of light weight wood frame with $100m^2$ of heating area. Thermal transmittance of roof (by ISO 10211) and building external walls are designed as $0.10W/m^2K$ and $0.14W/m^2$ respectively and low-e coating vacuum window glazing with PVC frame was installed. Also grid connected PV system and natural-circulation solar water heater was applied and 6kWp capacity of photovoltaic module was installed in pitched roof and $5m^2$ of solar collector in vertical wall facing the south. We analyzed the 2014 annual data of the detached house in which residents were actually living, measured though web-based remote monitoring system. Result: First, as a result, total annual energy consumption and energy production (PV generation and solar hot water) are 7,919kWh and 7,689kWh respectively and the rate of energy independence is 97.1% which is almost close to the zero energy. Second, plug load and hot water of energy consumption by category showed the highest numbers each with 33% and 31%, with following space heating 24%, electric cooker 8%, lighting 3% in order. Hot water supply is relatively higher than space heating because high insulation makes it decreased.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.104-110
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• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• 한국표면공학회지
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• 제29권6호
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• 태양에너지
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• 제20권2호
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• pp.55-65
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• 2000

이온빔 스퍼터링을 이용하여 Indium tin oxide (ITO)박막을 증착하였다. Ar 가스만을 이용하여 플라즈마를 형성한 경우와 $O_2$를 첨가한 경우에 대해 기판온도를 상온에서 $200^{\circ}C$까지 증가시키면서 온도의 영향을 관찰하였으며 이온빔 에너지의 변화가 박막의 특성에 미치는 영향을 관찰하였다. Ar 이온만으로 증착한 ITO 박막은 domain 구조를 보였으며 Ar+$O_2$ 이온으로 증착한 경우 grain 구조를 나타내었다. Ar 이온만으로 증착된 ITO박막의 전기 비저항의 최소값은 $100^{\circ}C$ 기판온도에서 $1.5\times10^{-4}{\Omega}cm$ 값을 보였으며 산소 첨가의 경우에는 $150^{\circ}C$에서 $4.3\times10^{-4}{\Omega}cm$이었다. 모든 박막이 $100^{\circ}C$이상의 기판 온도에서 가시광 영역에서의 투과도는 80%이상의 값을 보였다.

• 전기학회논문지
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• 제65권12호
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• 한국재료학회지
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• 제12권1호
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• pp.36-43
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• 2002

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.