• 한국진공학회지
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• 제18권4호
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• pp.296-301
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• 2009

ZnO에 대한 박막증착 연구를 위하여 유도결합 플라즈마 원자층박막증착(inductively coupled plasma assisted atomic layer deposition: ICP-ALD) 장치를 제작하고, 장치에 대한 기본 공정조건을 설정하기 위하여 플라즈마를 유도하지 않은 상태에서 p-type Si(100) 기판 위에 ZnO 박막을 증착하는 다양한 실험을 수행하였다. Zn 전구체(precursor)로는 Diethyl zinc [$Zn(C_2H_5)_2$, DEZn]를, 반응가스(reaction gas)로는 $H_2O$를, 캐리어(carrier) 및 퍼지가스(purge gas)로는 Ar을 사용하였다. 기판온도 $150^{\circ}C$에서 DEZn, $H_2O$, Ar의 공급시간을 변화시켜가면서 자기제한적 표면반응(self-limiting surface reaction)에 의한 박막성장조건을 성공적으로 유도하였다. 기판온도를 변화시켜가면서($90{\sim}210^{\circ}C$) 증착실험을 반복하여, 본 장치에 대한 ALD 공정온도(thermal ALD process window)를 확립하고 성장된 ZnO박막에 대한 증착특성, 결정성, 불순물 및 내부조성비등을 조사하였다. ALD 공정온도는 기판온도 $110{\sim}190^{\circ}C$로써 이 구간에서의 박막 평균증착률은 0.29 nm/cycle로 일정하게 나타났다. 기판온도가 높아질수록 결정성이 향상되어 ZnO(002) 피크가 우세하였다. 모든 ALD 공정온도에서 Zn와 O로만 구성된 고순도의 ZnO 박막을 실현하였는데, 온도가 높아질수록 Zn와 O의 비가 1에 근접하며 안정된 hexagonal wurtzite ZnO 구조의 박막이 성장되었다.

• 한국세라믹학회지
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• 제42권2호
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• pp.104-109
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• 2005

PbO 완충층의 역할을 확인하기 위해, r.f. magnetron sputtering법을 이용하여 p-type (100) Si 기판 위에 $Pt/Pb_{1.1}Zr_{0.53}Ti_{0.47}O_{3}$와 PbO target으로 Pt/PZT/PbO/Si의 MFIS 구조를 제조하였다. MFIS 구조에 완충층으로 PbO를 삽입함으로써 PZT 박막의 결정성이 크게 향상되었고, 박막의 공정온도도 상당히 낮출 수 있었다. 그리고 XPS depth profile 분석 결과, PbO 증착시 기판온도가 PbO와 Si의 계면에서 Pb의 확산에 미치는 영향을 확인하였다. PbO 완충층을 삽입한 MFIS는 높은 메모리 윈도우와 낮은 누설전류 밀도를 가지는 추수한 전기적 특성을 나타내었다. 특히, 기판온도 $300^{\circ}C$에서 증착된 PbO를 삽입한 Pt/PZT(200nm, $400^{\circ}C)PbO(80nm)/Si$는 9V의 인가전압에서 2.OV의 가장 높은 메모리 윈도우 값을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제10권12호
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• pp.5286-5306
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• 2016

Emerging applications in automation, medical imaging, traffic monitoring and surveillance need real-time data transmission over Wireless Sensor Networks (WSNs). Guaranteeing Quality of Service (QoS) for real-time traffic over WSNs creates new challenges. Rapid penetration of smart devices, standardization of Machine Type Communications (MTC) in next generation 5G wireless networks have added new dimensions in these challenges. In order to satisfy such precise QoS constraints, in this paper, we propose a new cross-layer QoS-provisioning strategy in Wireless Multimedia Sensor Networks (WMSNs). The network layer performs statistical estimation of sensory QoS parameters. Identifying QoS-routing problem with multiple objectives as NP-complete, it discovers near-optimal QoS-routes by using evolutionary genetic algorithms. Subsequently, the Medium Access Control (MAC) layer classifies the packets, automatically adapts the contention window, based on QoS requirements and transmits the data by using routing information obtained by the network layer. Performance analysis is carried out to get an estimate of the overall system. Through the simulation results, it is manifested that the proposed strategy is able to achieve better throughput and significant lower delay, at the expense of negligible energy consumption, in comparison to existing WMSN QoS protocols.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.241-241
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• 2010

New non-volatile memory with high density and high work-function metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, nano-dot layer of FePt with high density and high work-function (~5.2eV) was fabricated as a charge storage site in non-volatile memory, and its electrical characteristics were evaluated for the possibility of non-volatile memory in view of cell operation by Fowler-Nordheim (FN)-tunneling. Here, nano-dot FePt layer was controlled as a uniform single layer with dot size of under ~ 2nm and dot density of ${\sim}\;1.2{\times}10^{13}/cm^2$. Electrical measurements of MOS structure with FePt nano-dot layer shows threshold voltage window of ~ 6V using FN programming and erasing, which is satisfied with operation of the non-volatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with the similar dot density in our experiments. From these results, it is expected that this non-volatile memory using FePt nano-dot layer with high dot density and high work-function can be one of candidate structures for the future non-volatile memory.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2007년도 춘계학술대회논문집
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• pp.1147-1150
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• 2007

Korean traditional houses have been developed in sympathy with natural environment and formed comfortable indoor condition by properly using surrounding natural resources including building layout, space construction and material. Or traditional wooden windows adjusting ambient temperature and humidity have both the functions of window and door, although they are clearly divided in the West. While window paper is attached from the outside in China and Japan, it is attached from the inside in Korea. The opening and closing mode of windows is similar and their dimensions are shown not to be standardized but diverse in terms of the characteristic of wooden furniture and that of components placed between columns. Thus this study is to look into the performance of band-lattice door of a typical traditional one by observing changes in sound insulation characteristics according to difference in thickness and finishing method of window paper and those in sound insulation characteristics with the changed thickness of air layer in traditional windows and doors.

• 한국소음진동공학회논문집
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• 제25권10호
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• pp.692-699
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• 2015

Buffeting noise through a rear window in an automobile is investigated by using lattice Boltzmann method. The generation mechanism of the buffeting noise can be understood as the resonance mechanism in a Helmholtz resonator, which is driven by the convecting vortex in a shear-layer flow over the neck of the resonator. Two methods to suppress the buffeting noise are proposed, and their effects are quantitatively assessed. Opening front window reduces the observed buffeting tonal noise by 25 dB and the overall SPL by 4 dB, and the installation of a Helmholtz resonator acting as a dynamic damper reduces the tonal component that by 35 dB and the overall SPL by 10 dB.

• 한국통신학회논문지
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• 제29권8C호
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• pp.1062-1068
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• 2004

본 논문에서는 정확한 코너점 검출을 위하여 새로운 그레이 레벨 코너점 검출 방법을 제안한다. 새로운 코너 검출자는 코너 영역을 윈도우 크기에 따라서 동심원으로 계층을 나누어 각각의 계층에서의 코너의 각도를 구하여 코너점을 검출하도록 하였다. 또한 계층적 구조를 가지고 처리함으로써 기존의 그레이레벨 코너 검출자보다 더 빠른 처리 속도를 얻을 수 있도록 하였다.

• 한국통신학회논문지
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• 제30권10A호
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• pp.949-957
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• 2005

In this paper, the performances of a single-user DS-UWB system applying two simple proposed channel estimation schemes are introduced, according to the newly updated DS-UWB PHY Layer standard from IEEE P802.15.3a. The performances of error control coding, different combining schemes in selective Rake receiver for DS-UWB system are analyzed. Both of the two channel estimation schemes using data-independent structure work well in DS-UWB system with few pilot bits. For the purpose of channel estimation and reduces the number of pilot bits, we apply a pilot symbol spreaded with $2{^8}-1\;or\;2{^9}-1$ periods of m-sequence for different channel estimation schemes.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.16-19
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• 2014

Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.