• Title/Summary/Keyword: Window layer

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Chemical Bath Depsoition법에 의한 $Cd_{1-x}$$Zn_x$/S 박막의 제조 및 특성에 관한 연구 (Growth and Properties of $Cd_{1-x}$$Zn_x$/S Films Prepared by Chemical Bath Deposition for Photovoltaic Devices)

  • 송우창;이재형;김정호;박용관;양계준;유영식
    • 한국전기전자재료학회논문지
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    • 제14권2호
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    • pp.104-110
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    • 2001
  • Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

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CdS 박막의 boron doping에 따른 CdS/CdTe 태양전지 특성 (The Effect of Boron Doped CdS Film on CdS/CdTe Solar Cell)

  • 이호열;이재형;김정호;박용관;신재혁;신성호;박광자
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 D
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    • pp.1370-1372
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    • 1998
  • Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

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CdS 윈도레이어의 화학적기계적연마 특성 연구 (Study on chemical mechanical polishing characteristics of CdS window layer)

  • 나한용;박주선;고필주;김남훈;양정태;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.112-112
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    • 2008
  • 박막형 태양전지에 관한 연구는 1954년 D.C. Reynolds 가 단결정 CdS 에서 광기전력을 발견하면서부터 시작되었다. 고효율 단결정 규소 태양전지가 간편하게 제작되고 박막형 태양전지의 수명문제가 대두되어 한때는 연구가 중단되어지기도 하였으나, 에너지 문제가 심각해지면서 값이 저렴하고 넓은 면적에 쉽게 실용화 할 수 있는 박막형 태양전지에 많은 관심을 가지게 되었다. 박막형 태양전지에 사용되는 CdS는 II-VI 족 화합물 반도체로서 에너지금지대폭이 2.42eV인 직접천이형 n-type 반도체로서 대부분의 태양광을 통과시킬 수 있으며 가시광선을 잘 투과시키고 낮은 비저항으로서 광흡수층인 CdTe/$CuInSe_2$ 등과 같이 태양전지의 광투과층(윈도레이어)으로 널리 사용되고 있다. 이러한 이종접합 박막형 태양전지의 효율을 높이기 위해선 윈도레이어 재료인 CdS 박막의 낮은 전기 비저항치와 높은 광 투과도 값이 요구되어지고 있다. CdS 박막의 제작방법으로는 spray pyrolysis법, 스크린프린팅, 소결법, puttering법, 전착법, CBD(chemical bath deposition)법 및 진공증착법 등의 여러 가지 방법들이 보고되었다. 이 중 sputtering의 경우, 다른 방법들에서는 얻기 어려운 매우 얇은 두께의 박막 증착이 가능하며, 균일성 또한 우수하다. 또한 대면적화가 용이하여 양산화 기술로는 다른 제조 방법들에 비해 많은 장점을 가지고 있다. 따라서 본 연구에서는 sputtering에 의해 증착한 CdS의 박막에 광투과도 등의 향상을 위하여 CMP( chemical mechanical polishing) 공정을 적용하여 표면 특성을 개선하고자 하였다. 그 기초적인 자료로서 CdS 박막의 CMP 공정 조건에 따른 연마율과 비균일도, 표면 특성 등을 ellipsometer, AFM(atomic force microscopy) 및 SEM(scanning electron microscope) 등을 활용 하여 분석하였다.

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A Materials Approach to Resistive Switching Memory Oxides

  • Hasan, M.;Dong, R.;Lee, D.S.;Seong, D.J.;Choi, H.J.;Pyun, M.B.;Hwang, H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권1호
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    • pp.66-79
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    • 2008
  • Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

비아 절단 구조를 사용한 DRAM 패키지 기판 (DRAM Package Substrate Using Via Cutting Structure)

  • 김문정
    • 대한전자공학회논문지SD
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    • 제48권7호
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    • pp.76-81
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    • 2011
  • 본 논문에서는 비아 절단 구조를 제안하고 2층 구조의 DRAM 패키지 기판 설계에 적용하여 낮은 임피던스를 가지는 파워 분배망(Power Distribution Network)을 구현하였다. 제안한 신규 비아 구조는 비아의 일부가 절단된 형태이고 본딩 패드와 결합하여 넓은 배선 면적을 필요로 하지 않는 장점을 가진다. 또한 비아 절단 구조를 적용한 설계에서는 본딩 패드에서 VSSQ까지의 배선 경로를 효과적으로 단축시킴으로써 PDN 임피던스를 개선시킬 수 있다. DRAM 패키지 기판 상의 윈도우 영역 형성과 동시에 비아의 일부 영역이 제거되므로 비아 절단 구조 제작을 위한 추가적인 공정은 없다. 또한 비아 홀 내부를 솔더 레지스트로 채움으로써 버(Burr) 발생을 최소화하였으며, 이를 패키지 기판 단면 촬영을 통해 검증하였다. 비아 절단 구조의 적용 및 VDDQ/VSSQ 배치에 의한 PDN 임피던스 변화를 검증하기 위해서 3차원 전자장 시뮬레이션 및 네트워크 분석기 측정을 통해 기존 방식을 적용한 패키지 기판과 비교 검증을 진행하였다. 신규 DRAM 패키지 기판은 대부분의 주파수 범위에서 보다 우수한 PDN 임피던스를 가졌으며, 이는 제안한 비아 절단 구조와 파워/그라운드 설계 배치가 PDN 임피던스 감소에 효과적임을 증명한다.

SPATIAL AND ENERGY RESOLUTIONS OF A HEXAGONAL ANIMAL PET SCANNER BASED ON LGSO CRYSTAL AND FLAT-PANEL PMT

  • Lee, Chan-Mi;Hong, Seong-Jong;Yoon, Hyun-Suk;Ito, Mikiko;Kwon, Sun-Il;Park, Sang-Keun;Lee, Dong-Soo;Sim, Kwang-Souk;Lee, Jae-Sung
    • Nuclear Engineering and Technology
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    • 제44권1호
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    • pp.53-60
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    • 2012
  • The aim of this study was to explore the spatial and energy resolutions of a PET scanner that we have recently developed. The scanner, which consists of six detector modules with 1-layer LGSO crystals, has a hexagonal configuration with a faceto- face distance of 86.4 mm between two opposite PET modules; such properties facilitate the imaging of small animals. A $^{22}Na$ point source was employed to estimate horizontal and vertical spatial resolutions. To assess the energy resolution, a uniform $^{18}F$ cylindrical phantom was scanned. A software-based spectrum analysis of list-mode data was used to assign a local energy window centered on the photopeak position for every single crystal. For the image reconstruction, an ML-EM algorithm was used. The spatial resolutions at the center of the scanner were 0.99 mm in the horizontal direction and 1.13 mm in the vertical direction. The energy resolution averaged over each PMT ranged from 13.3%-14.3%, which gave an average value of 13.8%. These results show that this simple system is promising for small animal imaging with excellent spatial and energy resolutions.

STAR-CCM+를 이용한 썬루프 버페팅 유동 소음 해석 (Numerical Analysis of Sunroof Buffeting using STAR-CCM+)

  • 사티쉬 본투;프레드 멘돈카;김귀연;백영렬
    • 한국소음진동공학회논문집
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    • 제24권3호
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    • pp.213-218
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    • 2014
  • 썬루프 버페팅 소음의 고유특성을 의미하는 속도에 따른 소음강도의 증-감쇠 현상을 살펴보고자, HSM(Hyundai simplified model) 형상에 대해서 유동소음 해석 프로그램인 STAR-CCM+을 통하여 전체 차속 범위에 걸쳐 시험과 비교 검토하였다. 차량 내부의 재질에 따른 압축성 효과 및 감쇠효과는 인공 압축성과 감쇠 보정 기법인 FRET(frequency response test)를 이용하였다. 시뮬레이션 결과는 특정 속도에서 나타나는 소음 강도의 증-감쇠 시험결과를 매우 잘 예측하였으며 최대 SPL 수치도 정확히 예측하였다. 이는 썬루프 개방에 의해 발생하는 전단면에서의 유동 박리 주파수를 유동 소음 해석인 STAR-CCM+가 전 차속에 걸쳐서 매우 잘 예측하고 있음을 나타낸다.

RF-스퍼터링법을 이용하여 Ni-W 금속기판에 연속공정으로 증착된 $Y_2O_3$ 완충층 특성 연구 (Reel-to-reel Deposition of $Y_2O_3$ Buffer Layer on Ni-W Metal Substrates by the RF-sputtering)

  • 정국채;정태정;최규채;김영국
    • Progress in Superconductivity
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    • 제11권2호
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    • pp.100-105
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    • 2010
  • Reel-to-reel deposition of $Y_2O_3$ has been performed on Ni-5%W metal substrates using the RF-sputtering method. The epitaxial orientation of $Y_2O_3$ buffer layers to the base bi-axially textured substrate was well identified using ${\theta}-2{\theta}$, out-of-plane ($\omega$), and in-plane ($\phi$) scans in X-ray diffraction analysis. The optimization of $Y_2O_3$ seed layers in reel-to-reel fashion were investigated varying the deposition temperature, sputtering power, and pressure for its significant roles for the following buffer stacks and superconducting layers. $Y_2O_3$ were all grown epitaxially on bi-axially textured metal substrates at 380 watts and 5 mTorr in the temperature range of $600-740^{\circ}C$ with higher $Y_2O_3$ (400) intensities at ${\sim}710^{\circ}C$. It was found that the $\Delta\omega$ values were $1-2^{\circ}$ lower but the $\Delta\phi$ values were above $1^{\circ}$ higher than that of Ni-W substrates. As the sputtering power increased from 340 to 380 watts, $\Delta\omega$ and $\Delta\phi$ values showed decreased tendency. Even in the small window of deposition pressure of 3-7 mTorr, the $Y_2O_3$ (400) intensities increased and $\Delta\omega$ and $\Delta\phi$ values were reduced as sputtering pressure increased.

Characteristic Analysis of Poly(4-Vinyl Phenol) Based Organic Memory Device Using CdSe/ZnS Core/Shell Qunatum Dots

  • 김진우;김영찬;엄세원;노용한
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.289.1-289.1
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    • 2014
  • In this study, we made a organic thin film device in MIS(Metal-Insulator-Semiconductor) structure by using PVP (Poly vinyl phenol) as a insulating layer, and CdSe/ZnS nano particles which have a core/shell structure inside. We dissolved PVP and PMF in PGMEA, organic solvent, then formed a thin film through a spin coating. After that, it was cross-linked by annealing for 1 hour in a vacuum oven at $185^{\circ}C$. We operated FTIR measurement to check this, and discovered the amount of absorption reduced in the wave-length region near 3400 cm-1, so could observe decrease of -OH. Boonton7200 was used to measure a C-V relationship to confirm a properties of the nano particles, and as a result, the width of the memory window increased when device including nano particles. Additionally, we used HP4145B in order to make sure the electrical characteristics of the organic thin film device and analyzed a conduction mechanism of the device by measuring I-V relationship. When the voltage was low, FNT occurred chiefly, but as the voltage increased, Schottky Emission occurred mainly. We synthesized CdSe/ZnS and to confirm this, took a picture of Si substrate including nano particles with SEM. Spherical quantum dots were properly made. Due to this study, we realized there is high possibility of application of next generation memory device using organic thin film device and nano particles, and we expect more researches about this issue would be done.

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Effects of incubation temperature on the embryonic viability and hatching time in Russian sturgeon (Acipenser gueldenstaedtii)

  • Kim, Eun Jeong;Park, Chulhong;Nam, Yoon Kwon
    • Fisheries and Aquatic Sciences
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    • 제21권9호
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    • pp.23.1-23.8
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    • 2018
  • Background: Russian sturgeon (Acipenser gueldenstaedtii) is an emerging candidate species in the Korean aquaculture domain owing to its highly valued caviar. Although the embryonic development of this species was previously described, the complete image data on the morphological differentiation of developing embryos have not been yet fully available. Further, with the viewpoint of larval production in hatchery, the effects of temperature on embryonic viability and the temporal window of hatching event have not been extensively studied. Hence, the objective of this study was to provide a complete set of photographic image data on the embryogenesis and also to examine the effects of incubation temperatures on embryonic viability and hatching event in farm-bred Russian sturgeon. Results: Typical characteristics of embryonic development including uneven, holoblastic cleavages with unequal blastomeres, followed by the formation of germ layer, neurulation, and organogenesis until hatching, were documented. Under different temperature conditions (12, 16, or $20^{\circ}C$), viability of embryos incubated at $12^{\circ}C$ was significantly lower as relative to those of 16 and $20^{\circ}C$ incubated embryos. Hatchability of embryos was higher, and the timing of hatching event was more synchronized at $20^{\circ}C$ than at 12 and $16^{\circ}C$. Conclusion: Data from this study suggest that the incubation of Russian sturgeon embryos at $20^{\circ}C$ would be desirable in the hatchery practice with respect to the good hatchability of embryos and the synchronization of hatching events. Additionally, the updated image data for complete embryonic development could be a useful reference guide for not only developmental researches but also artificial propagation of Russian sturgeon in farms.